About: Photoluminescence study of confined donors in GaAs/AlxGa

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scientific article published on 01 October 1988

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в жовтні 1988 (uk) im Oktober 1988 veröffentlichter wissenschaftlicher Artikel (de) artículu científicu espublizáu n'ochobre de 1988 (ast) գիտական հոդված հրատարակված 1988 թվականի հոկտեմբերի 1-ին (hy) scientific article published on 01 October 1988 (en)
publication date	wds:Q78003024-418B1388-DDEA-46AE-B4F9-3AB220F4EB4D
publication date	1988-10-01 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q78003024-0E08FF96-8754-45B6-BB11-25020A6A409E
language of work or name	English
cites work	wds:Q78003024-0FCBC3FB-1592-47D1-A019-14628EFBA5F3 wds:Q78003024-2F37CD05-E19A-435C-BD95-6D6272044E42 wds:Q78003024-818149EA-0F55-4032-8B42-675D5DDC62E5 wds:Q78003024-BFA63BE6-2112-4191-91E6-84647ABB40B8 wds:Q78003024-D360CBCA-EC19-4EA2-A47C-1CD9C649EC41
cites work	Effect of magnetic field on the energy levels of a hydrogenic impurity center in GaAs/Ga1-xAlxAs quantum-well structures Effect of band hybridization on exciton states in GaAs-AlxGa1-xAs quantum wells Binding of shallow donor impurities in quantum-well structures Acceptor spectra of AlxGa1-xAs-GaAs quantum wells in external fields: Electric, magnetic, and uniaxial stress Raman spectra of shallow acceptors in quantum-well structures
author name string	wds:Q78003024-34954AAC-BF26-47F5-AC1F-A836CF02E506 wds:Q78003024-B210AFDE-1EC9-42C4-976F-24846CD1F2CF wds:Q78003024-B4052C4E-254D-4D33-B229-FE4D41B23668 wds:Q78003024-CD1E6EBA-25AF-48CA-9E5A-4616DF124B6D wds:Q78003024-FCA79732-5452-463E-B29D-6E0C642957CB
author name string	Liu X Petrou A McCombe BD Ralston J Wicks G
rdfs:label	Photoluminescence study of confined donors in GaAs/AlxGa (en) Photoluminescence study of confined donors in GaAs/AlxGa (nl)
skos:prefLabel	Photoluminescence study of confined donors in GaAs/AlxGa (en) Photoluminescence study of confined donors in GaAs/AlxGa (nl)
name	Photoluminescence study of confined donors in GaAs/AlxGa (en) Photoluminescence study of confined donors in GaAs/AlxGa (nl)
title	wds:Q78003024-3BD62D7C-289E-4E51-B500-80E58FF33F00
title	Photoluminescence study of confined donors in GaAs/AlxGa (en)
page(s)	wds:Q78003024-E3AA85E6-DFF5-475D-8779-C1FD3D55CA1E
page(s)	8522-8525
instance of	wds:Q78003024-82ECC0AB-1FF7-4BED-A14A-6239805482EF
instance of	scholarly article
PubMed ID	wds:Q78003024-7A5546C3-907A-43F6-A5C2-252CF0859E04
PubMed ID	http://rdf.ncbi.nlm.nih.gov/pubchem/reference/9945625
PubMed ID	9945625
published in	wds:Q78003024-609958F8-7C29-4735-AE69-A87378E424F5
published in	Physical Review B
issue	wds:Q78003024-34B997AE-5712-4936-AB1D-5FE6667F35AE
volume	wds:Q78003024-6E78F15B-0AD4-4A6B-9236-4D7B0C501687
issue	12
volume	38
DOI	wds:Q78003024-FA6D15F5-553D-4755-B59D-1C9F3E488FC4
DOI	http://dx.doi.org/10.1103/PHYSREVB.38.8522
DOI	10.1103/PHYSREVB.38.8522
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q78003024
is cites work of	Stability of an exciton bound to an ionized donor in quantum dots Determination of the binding energy of excitons to neutral donors located at the center or edge of the well or at the center of the barrier in AlxGa1-xAs/GaAs multiple-quantum-well structures Impurity-related optical absorption from GaAs-(Ga,Al)As quantum wells under an applied electric field Free-to-bound and light- and heavy-hole bound-exciton transitions in AlxGa1-xAs-GaAs multiple quantum wells Theoretical calculations of shallow acceptor states in GaAs/AlxGa1-xAs quantum wells in the presence of an external magnetic field Dependence of the binding energy of the acceptor on its position in a GaAs/AlxGa1-xAs quantum well Enhancement of the free-to-bound transition in narrow GaAs/Al0.3Ga0.7As quantum wells via a possible excitonic Auger mechanism Donor-photoluminescence line shapes from GaAs-(Ga,Al)As quantum wells Photoluminescence studies of planar-doped GaAs-Ga1-xAlxAs multiple-quantum-well structures Photoluminescence determination of the binding energy of residual donors in 300-Å GaAs/AlxGa1-xAs quantum wells Photoluminescence study of silicon donors in n-type modulation-doped GaAs/AlAs quantum wells STABILITY OF AN EXCITON BOUND TO AN IONIZED ACCEPTOR IN QUANTUM DOTS Observation of the acceptor-bound exciton confined in narrow GaAs/AlxGa1-xAs quantum wells in photoluminescence excitation Photoluminescence line shape associated with e-A0 acceptor-related recombination in GaAs-(Ga,Al)As quantum wells under applied electric field Donor 1s-2p+/- transitions in doped GaAs-Ga1-xAlxAs quantum wells: Effects of electric and magnetic fields
is cites work of	wds:Q57739816-AB01CA75-A503-4B86-A794-5CECA6CA797D wds:Q74371514-91FFF331-2731-4B93-BCD9-5CCA70EAED32 wds:Q78183698-7FD78CE5-33E5-48A1-A9C7-6B340895023D wds:Q74381957-EC900DDA-61AB-4DC2-A9A0-147F5EA125B3 wds:Q78177742-182527E1-3290-4731-BF5A-A584117E327E wds:Q78119525-A556E844-DB75-4152-A870-39EA92E11B5A wds:Q78213872-41EC0019-CF75-4017-AA39-AADB102E61F5 wds:Q78128869-FF9C593E-B742-415D-BC83-D6311A1D0FA3 wds:Q78207380-97C1DA53-C242-4043-8D4B-8FA0F0F1110E wds:Q62145359-6968C1B2-C1FA-40E0-8343-C098DF024616 wds:Q78129044-80BD3614-F25E-4B19-8991-A3F95E531579 wds:Q31087222-16858E9D-0EC2-4517-83DF-9C44E2795844 wds:Q78177998-1E9EAD68-1BFC-49D7-B403-ACD11B2CCC56 wds:Q78193933-BF3EAAA1-A84C-49CD-8CFA-536B1B263871 wds:Q74395336-EA3D02C2-0B83-436E-8A32-A77FD26058CF

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