About: Electroreflectance and photoreflectance study of the space-charge region in semiconductors: (In-Sn-O)/InP as a model system

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About: Electroreflectance and photoreflectance study of the space-charge region in semiconductors: (In-Sn-O)/InP as a model system Goto Sponge NotDistinct Permalink

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scientific article published on 01 March 1988

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в березні 1988 (uk) article scientifique publié en 1988 (fr) im März 1988 veröffentlichter wissenschaftlicher Artikel (de) artículu científicu espublizáu en marzu de 1988 (ast) scientific article published on 01 March 1988 (en)
publication date	wds:Q78000938-3FBADAEC-17BE-490A-BE23-90B8ACA6E798
publication date	1988-03-01 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q78000938-E7335723-6571-4E34-937A-2F839B0A055B
language of work or name	English
cites work	wds:Q78000938-540A5D5D-011D-4810-9A69-EE693791563C wds:Q78000938-62DD354D-EB7C-4143-8092-7FE80544C28A wds:Q78000938-C2884CF6-BFFF-462A-A3F8-0E1A596D6116 wds:Q78000938-CA982CAF-2D49-4873-BEA6-8E68F7A0CABE
cites work	Electroreflectance spectroscopy of Si-GexSi1-x quantum-well structures Modulated-reflectance spectroscopy of InP doping superlattices Photoreflectance modulation mechanisms in GaAs-AlxGa1-xAs multiple quantum wells Observation of transitions between electronic states at the (111) A-face of CdTe by electrolyte electroreflectance
author name string	wds:Q78000938-092CD490-E592-4BAE-95FA-800175A7F165 wds:Q78000938-29E48927-383D-4573-BC25-2B6C5E9A7C0D wds:Q78000938-2A864629-EDEF-4498-8C22-21EFB917873F wds:Q78000938-64E1F2C7-1DE2-41D9-8160-868018398709 wds:Q78000938-8AC3D764-0EE4-47F6-B798-435DD89D8BE4 wds:Q78000938-B4101D8E-37AB-4477-BB37-FEDE7FD0155D
author name string	Bhattacharya RN Shen H Coutts T Aharoni H Parayanthal P Pollak FH
rdfs:label	Electroreflectance and photoreflectance study of the space-charge region in semiconductors: (In-Sn-O)/InP as a model system (en) Electroreflectance and photoreflectance study of the space-charge region in semiconductors: (In-Sn-O)/InP as a model system (nl)
skos:prefLabel	Electroreflectance and photoreflectance study of the space-charge region in semiconductors: (In-Sn-O)/InP as a model system (en) Electroreflectance and photoreflectance study of the space-charge region in semiconductors: (In-Sn-O)/InP as a model system (nl)
name	Electroreflectance and photoreflectance study of the space-charge region in semiconductors: (In-Sn-O)/InP as a model system (en) Electroreflectance and photoreflectance study of the space-charge region in semiconductors: (In-Sn-O)/InP as a model system (nl)
title	wds:Q78000938-4A3C3620-030A-437D-B763-D46CC37512DB
title	Electroreflectance and photoreflectance study of the space-charge region in semiconductors: (In-Sn-O)/InP as a model system (en)
page(s)	wds:Q78000938-405ABFE7-714B-42A0-B11D-D5ED4640447F
page(s)	4044-4050
instance of	wds:Q78000938-F4956341-944E-4E71-AB79-52459A8BC271
instance of	scholarly article
PubMed ID	wds:Q78000938-4F3FED2C-71F5-4405-AD3A-4E0ACC2986C3
PubMed ID	http://rdf.ncbi.nlm.nih.gov/pubchem/reference/9945039
PubMed ID	9945039
published in	wds:Q78000938-63EAE45B-AD27-4E67-A8D8-4ED45B1009E0
published in	Physical Review B
issue	wds:Q78000938-4D2ED279-2E29-4F27-B7AC-878291BF6C38
volume	wds:Q78000938-BBAD103A-9745-47A1-8493-974B09F566D3
issue	8
volume	37
DOI	wds:Q78000938-848426E4-285A-4569-96CE-A305FECAFE70
DOI	http://dx.doi.org/10.1103/PHYSREVB.37.4044
DOI	10.1103/PHYSREVB.37.4044
Fatcat ID	wds:Q78000938-B7F2AEDB-ADD3-439B-A4BB-912E6210F6F6
Fatcat ID	release_3j2pncxymfhqrialqi5i2nsjwa
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q78000938
is cites work of	Generalized Franz-Keldysh theory of electromodulation Photoreflectance from GaAs and GaAs/GaAs interfaces Photoreflectance study on residual strain in heteroepitaxial gallium arsenide on silicon Observation of Franz-Keldysh oscillations in the stress-modulated spectra of (001) n-type GaAs Photoreflectance characterization of surface Fermi level in as‐grown GaAs(100) Method for calculating photo- and electroreflectance spectra from semiconductor heterostructures Surface and bulk modulation in photoreflectance from undoped GaAs Fourier transformed photoreflectance characterization of interface electric fields in GaAs/GaInP heterojunction bipolar transistor wafers
is cites work of	wds:Q78205790-E264FDC2-F194-4355-968A-03FFBD999A1F wds:Q62519666-46005151-78CC-489A-B67C-A4F2264D555A wds:Q78177000-CAB54E65-842F-4A0B-9796-C986A0E9E0D8 wds:Q78141393-30A9C018-8239-4AB1-A88B-3DAF45F242F9 wds:Q78197709-F15BF635-AF58-44A8-BCEE-BD628857DC11 wds:Q74397962-A3194CD2-3C97-48C8-BB03-6E755A91DA7C wds:Q62519665-85977531-4672-448E-AD52-128DD3E4C6DC wds:Q62519631-92FAB8F5-3DB2-488A-B2C4-F1048CC7B225

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