About: Quantitative measurements of thermal relaxation of isolated silicon hillocks and craters on the Si(111)-7 x 7 surface by scanning tunneling microscopy

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About: Quantitative measurements of thermal relaxation of isolated silicon hillocks and craters on the Si(111)-7 x 7 surface by scanning tunneling microscopy Goto Sponge NotDistinct Permalink

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scientific article published on 01 June 1996

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в червні 1996 (uk) article scientifique publié en 1996 (fr) im Juni 1996 veröffentlichter wissenschaftlicher Artikel (de) artículu científicu espublizáu en xunu de 1996 (ast) scientific article published on 01 June 1996 (en)
publication date	wds:Q74568452-873756AA-998C-4885-BE3E-42E55072C14C
publication date	1996-06-01 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q74568452-6FFDB34F-CDC5-4448-AAFA-A6AA8171DBB2
language of work or name	English
author name string	wds:Q74568452-31284C9C-6773-4B87-87FC-B11B9FFE76A8 wds:Q74568452-459FBF2F-68BF-4433-81D7-22B8D1E6858F wds:Q74568452-EE44FCF6-610F-47FA-92CA-5A87436F0B93
author name string	Tanaka Y Ichimiya A Ishiyama K
rdfs:label	Quantitative measurements of thermal relaxation of isolated silicon hillocks and craters on the Si (nl) Quantitative measurements of thermal relaxation of isolated silicon hillocks and craters on the Si(111)-7 x 7 surface by scanning tunneling microscopy (en)
skos:prefLabel	Quantitative measurements of thermal relaxation of isolated silicon hillocks and craters on the Si (nl) Quantitative measurements of thermal relaxation of isolated silicon hillocks and craters on the Si(111)-7 x 7 surface by scanning tunneling microscopy (en)
name	Quantitative measurements of thermal relaxation of isolated silicon hillocks and craters on the Si (nl) Quantitative measurements of thermal relaxation of isolated silicon hillocks and craters on the Si(111)-7 x 7 surface by scanning tunneling microscopy (en)
title	wds:Q74568452-8BD7D9BC-3DF6-4234-9867-C937C3E8B0B2
title	Quantitative measurements of thermal relaxation of isolated silicon hillocks and craters on the Si(111)-7 x 7 surface by scanning tunneling microscopy (en)
page(s)	wds:Q74568452-5FB33B8C-CA30-471B-980E-4A6A9CDF359A
page(s)	4721-4724
instance of	wds:Q74568452-35104B83-A9EE-4545-969F-14F2D5590D85
instance of	scholarly article
PubMed ID	wds:Q74568452-212F90E1-3A0A-47E9-B1DF-5BDC9768FCDA
PubMed ID	http://rdf.ncbi.nlm.nih.gov/pubchem/reference/10061364
PubMed ID	10061364
published in	wds:Q74568452-6952C800-05E8-4BBB-A90C-13D8D2B2F212
published in	Physical Review Letters
issue	wds:Q74568452-7FB8C545-0323-4FFA-BE6A-F8928FBFA12D
volume	wds:Q74568452-6FD6A4B9-E57C-43DB-912C-EEAC718CAAF1
issue	25
volume	76
DOI	wds:Q74568452-DC7F3B6D-E085-47A0-9545-6DD65924F7FD
DOI	http://dx.doi.org/10.1103/PHYSREVLETT.76.4721
DOI	10.1103/PHYSREVLETT.76.4721
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q74568452
is cites work of	Decay of silicon mounds: scaling laws and description with continuum step parameters Slope-controlled surface instabilities Fluorine etching on the Si()-7×7 surfaces using fluorinated fullerene
is cites work of	wds:Q58234385-715C57DB-77C0-4E5E-B116-E2E8606F32D0 wds:Q73041536-97D39FBD-3D6F-49BD-BD0F-B0B35EF4549C wds:Q57742244-2D995BA6-8D99-4F7E-9EE4-C44670B57F18

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