About: Direct mapping of electronic structure across Al0.3Ga0.7As/GaAs heterojunctions: Band offsets, asymmetrical transition widths, and multiple-valley band structures

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About: Direct mapping of electronic structure across Al0.3Ga0.7As/GaAs heterojunctions: Band offsets, asymmetrical transition widths, and multiple-valley band structures Goto Sponge NotDistinct Permalink

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scientific article published on 01 September 1993

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rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована у вересні 1993 (uk) article scientifique publié en 1993 (fr) im September 1993 veröffentlichter wissenschaftlicher Artikel (de) artículu científicu espublizáu en setiembre de 1993 (ast) scientific article published on 01 September 1993 (en) գիտական հոդված հրատարակված 1993 թվականի սեպտեմբերի 1-ին (hy)
publication date	wds:Q74538984-173148C9-3DF3-4115-9F96-2741F5447F6A
publication date	1993-09-01 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q74538984-0684EB90-FF30-4F5C-B755-084442D09C3A
language of work or name	English
cites work	wds:Q74538984-0BB43364-472F-4A77-BB09-412AB2746654 wds:Q74538984-32202DDC-0606-4308-AE10-2E758236FC25 wds:Q74538984-6635C28F-5E18-49A8-B57C-13AB05F5ABAC wds:Q74538984-F1DA88D5-6121-47F2-A629-DC874F72B603
cites work	Observation of interface band structure by ballistic-electron-emission microscopy Atomistic nature of heterointerfaces in III-V semiconductor-based quantum-well structures and its consequences for photoluminescence behavior Chemical mapping of semiconductor interfaces at near atomic resolution Tunneling spectroscopy across GaAs/AlxGa1-xAs interfaces at nanometer resolution
author name string	wds:Q74538984-12594FEE-DC61-4896-B214-920AC87E4753 wds:Q74538984-24F1FE26-D9E0-470A-95EC-5F5E9DEC8F2B wds:Q74538984-AA5C102E-9373-47B5-A4F8-E83B30570EC6 wds:Q74538984-FB2583C0-01CC-4204-999A-C0C2B812B50D
author name string	Shih CK Chao K Sadra K Streetman BG
rdfs:label	Direct mapping of electronic structure across Al0.3Ga0.7As/GaAs heterojunctions: Band offsets, asymmetrical transition widths, and multiple-valley band structures (en) Direct mapping of electronic structure across Al0.3Ga0.7As/GaAs heterojunctions: Band offsets, asymmetrical transition widths, and multiple-valley band structures (nl)
skos:prefLabel	Direct mapping of electronic structure across Al0.3Ga0.7As/GaAs heterojunctions: Band offsets, asymmetrical transition widths, and multiple-valley band structures (en) Direct mapping of electronic structure across Al0.3Ga0.7As/GaAs heterojunctions: Band offsets, asymmetrical transition widths, and multiple-valley band structures (nl)
name	Direct mapping of electronic structure across Al0.3Ga0.7As/GaAs heterojunctions: Band offsets, asymmetrical transition widths, and multiple-valley band structures (en) Direct mapping of electronic structure across Al0.3Ga0.7As/GaAs heterojunctions: Band offsets, asymmetrical transition widths, and multiple-valley band structures (nl)
author	wds:Q74538984-A6D665A8-6A63-4D98-817B-488CF16B8490
author	Shangjr Gwo
title	wds:Q74538984-D2139917-FC35-4185-A7E4-DFDB5CED4C98
title	Direct mapping of electronic structure across Al0.3Ga0.7As/GaAs heterojunctions: Band offsets, asymmetrical transition widths, and multiple-valley band structures (en)
page(s)	wds:Q74538984-729FAF9C-A4CA-40B9-95F5-D6717C2B25AD
page(s)	1883-1886
instance of	wds:Q74538984-AFD8C176-EA1A-47AE-B458-C55C248B86C8
instance of	scholarly article
PubMed ID	wds:Q74538984-66730EB7-6624-40DC-935A-E3E0192BA6FC
PubMed ID	http://rdf.ncbi.nlm.nih.gov/pubchem/reference/10054524
PubMed ID	10054524
published in	wds:Q74538984-B6550008-752A-482E-B179-A7AA04FE3C3C
published in	Physical Review Letters
issue	wds:Q74538984-C5D2C450-A2FD-44F3-A570-57B39A4F807E
volume	wds:Q74538984-4CF08AFC-7A14-4161-8618-93A8A393143E
issue	12
volume	71
DOI	wds:Q74538984-8D2831FA-039C-4A21-A40E-C06264A8D66B
DOI	http://dx.doi.org/10.1103/PHYSREVLETT.71.1883
DOI	10.1103/PHYSREVLETT.71.1883
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q74538984
is cites work of	Visualizing short-range charge transfer at the interfaces between ferromagnetic and superconducting oxides Valence-band offset at AlxGa1-xAs/GaAs: Application of average-bond-energy theory in conjunction with the cluster expansion method High-Mobility Two-Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy
is cites work of	wds:Q43861500-2E8A7979-14ED-405A-9165-D877E535B53C wds:Q78128859-F10F1A4E-CA32-4FE2-BEA2-D2D3599D9D3C wds:Q91709992-527DCEAF-F887-431B-B3C3-9B74F423310D

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