About: Chemical mapping of semiconductor interfaces at near atomic resolution

Facets (new session)
Description
Metadata
Settings
- owl:sameAs
- Inference Rule:

About: Chemical mapping of semiconductor interfaces at near atomic resolution Goto Sponge NotDistinct Permalink

An Entity of Type : wikibase:Item, within Data Space : wikidata.demo.openlinksw.com associated with source document(s)

scientific article published on 01 February 1989

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в лютому 1989 (uk) im Februar 1989 veröffentlichter wissenschaftlicher Artikel (de) artículu científicu espublizáu en febreru de 1989 (ast) artikull shkencor i botuar më 01 shkurt 1989 (sq) scientific article published on 01 February 1989 (en)
publication date	wds:Q74496483-8EC83E6B-CA2E-4E85-B4C5-A8F28B6117EE
publication date	1989-02-01 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q74496483-297ABC28-D313-4E14-BF01-5003854538BD
language of work or name	English
cites work	wds:Q74496483-83242E6C-A5B6-47BB-948E-EEF0BC69CAB3
cites work	Atomistic nature of heterointerfaces in III-V semiconductor-based quantum-well structures and its consequences for photoluminescence behavior
author name string	wds:Q74496483-18A34491-8108-4190-A752-016B876306A8 wds:Q74496483-3508C6F6-6846-4CB7-8A41-CCAED64F7FEE wds:Q74496483-5F51C15D-1EFD-4856-858F-DF559F1B652F wds:Q74496483-99E858B2-466A-424A-8624-80D994EE7725
author name string	Taylor DW Cunningham J Tu CW Ourmazd A
rdfs:label	Chemical mapping of semiconductor interfaces at near atomic resolution (en) Chemical mapping of semiconductor interfaces at near atomic resolution (nl) Chemical mapping of semiconductor interfaces at near atomic resolution (sq)
skos:prefLabel	Chemical mapping of semiconductor interfaces at near atomic resolution (en) Chemical mapping of semiconductor interfaces at near atomic resolution (nl) Chemical mapping of semiconductor interfaces at near atomic resolution (sq)
name	Chemical mapping of semiconductor interfaces at near atomic resolution (en) Chemical mapping of semiconductor interfaces at near atomic resolution (nl) Chemical mapping of semiconductor interfaces at near atomic resolution (sq)
title	wds:Q74496483-FAE6F24E-B978-45ED-9F07-9411F3BC1B6E
title	Chemical mapping of semiconductor interfaces at near atomic resolution (en)
page(s)	wds:Q74496483-20036FFC-BD73-42AE-B3BD-5236658D3B6B
page(s)	933-936
instance of	wds:Q74496483-276E96AC-9C40-4A4D-9EAF-BBBA432D6D98
instance of	scholarly article
PubMed ID	wds:Q74496483-3ED0318B-51FA-46A4-82DF-6F32AC36CACD
PubMed ID	http://rdf.ncbi.nlm.nih.gov/pubchem/reference/10040375
PubMed ID	10040375
published in	wds:Q74496483-FADEE0F8-3897-4258-A6B4-D25961EEA5E7
published in	Physical Review Letters
issue	wds:Q74496483-CC94E024-A2D7-4065-B456-820DCD7003CB
volume	wds:Q74496483-478EA219-2490-45F8-A73D-89D0451C17EA
issue	8
volume	62
DOI	wds:Q74496483-357B043C-4E20-4339-A8D5-78DAE5330EB7
DOI	http://dx.doi.org/10.1103/PHYSREVLETT.62.933
DOI	10.1103/PHYSREVLETT.62.933
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q74496483
is cites work of	Atomic Scale Strain and Composition Evaluation from High-Resolution Transmission Electron Microscopy Images Theory of the linewidth of intersubband plasmons in quantum wells. Magneto-optical study of interface mixing in the CdTe-(Cd,Mn)Te system Quantitative atomic resolution mapping using high-angle annular dark field scanning transmission electron microscopy Nonlinear diffusion in multilayered semiconductor systems Stimulated-picosecond-photon-echo studies of localized exciton relaxation and dephasing in GaAs/AlxGa1-xAs multiple quantum wells Level repulsion in nanophotoluminescence spectra from single GaAs quantum wells Cation interdiffusion in GaAs‐AlAs superlattices measured with Raman spectroscopy Particle localization and phonon sidebands in GaAs/AlxGa1-xAs multiple quantum wells Fermi-Dirac distribution of excitons in coupled quantum wells Collision broadening of two-dimensional excitons in a GaAs single quantum well Ga segregation and the effect of Si and Ge interlayers at the GaAs(100)/AlAs heterostructure Identity of the conduction-band minimum in (AlAs)1/(GaAs)1 (001) superlattices: Intermixing-induced reversal of states Optical-phonon Raman-scattering study of short-period GaAs-AlAs superlattices: An examination of interface disorder Layer Ordering and Faulting in(GaAs)n/(AlAs)nUltrashort-Period Superlattices Multilayers as microlabs for point defects: Effect of strain on diffusion in semiconductors Direct mapping of electronic structure across Al0.3Ga0.7As/GaAs heterojunctions: Band offsets, asymmetrical transition widths, and multiple-valley band structures Influence of the interface composition of InAs/AlSb superlattices on their optical and structural properties Exciton dynamics for extended monolayer islands in thinIn0.53Ga0.47As/InP quantum wells Lattice dynamics of superlattices with interface roughness Luminescence kinetics of intrinsic excitonic states quantum-mechanically bound near high-quality (n--type GaAs)/(p-type AlxGa1-xAs) heterointerfaces Transport measurements of resonant-tunneling widths Comment on "Chemical mapping of semiconductor interfaces at near-atomic resolution" Ourmazd and Cunningham reply Second-order Raman spectroscopy of AlAs: A test of lattice-dynamical models Femtosecond four-wave-mixing studies of exciton localization and exciton-exciton interaction in ZnSe/ZnxCd1-xSe quantum wells Evidence for intrinsic interfacial strain in lattice-matched InxGa1-xAs/InP heterostructures Electronic structure and bonding at SiC/AlN and SiC/BP interfaces Interfacial properties of very thin GaInAs/InP quantum well structures grown by metalorganic vapor phase epitaxy Cathodoluminescence imaging of quantum wells: The influence of exciton transfer on the apparent island size. Extended, monolayer flat islands and exciton dynamics in Ga0.47In0.53As/InP quantum-well structures Interface segregation and clustering in strained-layer InGaAs/GaAs heterostructures studied by cross-sectional scanning tunneling microscopy Atomic-scale composition fluctuations in III-V semiconductor alloys Interface roughness in quantum wells prepared with growth interruptions Electron transmission through a single nonabrupt GaAs/AlxGa1-xAs barrier subjected to an electric field Pattern recognition in high-resolution electron microscopy of complex materials. Monolayer islands in an interrupted-growth type-II single quantum well Mapping projected potential, interfacial roughness, and composition in general crystalline solids by quantitative transmission electron microscopy Theory of interfacial stability of semiconductor superlattices Field-modulated diffusivity of excitons in coupled asymmetric quantum wells Quantum-confined excitonic states at high-quality interfaces in GaAs(n type)/AlxGa1-xAs(p type) double heterostructures
is cites work of	wds:Q74391196-D1299472-B998-42ED-A177-9A66B58D8611 wds:Q79116381-6678A105-3BAF-4D84-BA0D-0C4B42F4EB31 wds:Q74553501-21AC6169-49C4-474B-BD4D-7F1D6AAD1893 wds:Q60081123-87CFB035-CD0C-4441-891B-0BD344EE632F wds:Q62582094-9229E6B4-D90A-4AD9-B55C-2373E872EC75 wds:Q74363367-E8C38575-CCEA-495F-A158-88A41A2BC241 wds:Q78118470-A6906073-B160-48D4-9AB9-C92EA6787D4A wds:Q31087126-18055045-D696-495F-B9EB-0453D86B86CD wds:Q59509905-35A3EB7B-2E3F-43FF-9D5C-E0AC7174B84D wds:Q62395076-939D0EBE-7C89-4092-AC1D-A6B574FE8A79

Faceted Search & Find service v1.16.117 as of May 05 2024

Alternative Linked Data Documents: ODE Content Formats:

RDF

ODATA

Microdata

About

OpenLink Virtuoso version 07.20.3239 as of May 5 2024, on Linux (x86_64-centos_6-linux-gnu), Single-Server Edition (378 GB total memory, 172 GB memory in use)
Data on this page belongs to its respective rights holders.
Virtuoso Faceted Browser Copyright © 2009-2024 OpenLink Software