About: Surface intervalley scattering on GaAs(110): Direct observation with picosecond laser photoemission

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About: Surface intervalley scattering on GaAs(110): Direct observation with picosecond laser photoemission Goto Sponge NotDistinct Permalink

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scientific article published on 01 February 1989

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в лютому 1989 (uk) im Februar 1989 veröffentlichter wissenschaftlicher Artikel (de) artículu científicu espublizáu en febreru de 1989 (ast) artikull shkencor i botuar më 01 shkurt 1989 (sq) scientific article published on 01 February 1989 (en)
publication date	wds:Q74496377-CF490E23-EDC9-433F-B2E7-283D418600B0
publication date	1989-02-01 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q74496377-853E48F6-8229-4A85-822F-21A48608377D
language of work or name	English
cites work	wds:Q74496377-3B8F9458-EA43-4A70-9752-EC5553F4C5B7 wds:Q74496377-55AC7A2A-A9B4-4100-BB70-E8FF6E264427 wds:Q74496377-6A54B172-8870-4846-8C1E-1E9499181858 wds:Q74496377-75BEFB25-E9EE-4118-B5F2-8DE80231DCE8 wds:Q74496377-8A456FCF-E311-4C14-B184-BC540FC326C6
cites work	Picosecond time-resolved photoemission study of the InP(110) surface Sb overlayers on (110) surfaces of III-V semiconductors: Total-energy minimization and surface electronic structure Conduction-band dispersion, critical points, and unoccupied surface states on GaAs(110): A high-resolution angle-resolved inverse photoemission study Electron-Hole Liquids in Semiconductors Direct observation of adsorbate-induced band-gap states on GaAs(110)
author name string	wds:Q74496377-375B20E2-96BE-4177-A421-A64D778562B1 wds:Q74496377-FCEE60A0-29C8-40E9-A05B-ADD13FC463AF
author name string	Haight R Silberman JA
rdfs:label	Surface intervalley scattering on GaAs (nl) Surface intervalley scattering on GaAs(110): Direct observation with picosecond laser photoemission (en) Surface intervalley scattering on GaAs(110): Direct observation with picosecond laser photoemission (sq)
skos:prefLabel	Surface intervalley scattering on GaAs (nl) Surface intervalley scattering on GaAs(110): Direct observation with picosecond laser photoemission (en) Surface intervalley scattering on GaAs(110): Direct observation with picosecond laser photoemission (sq)
name	Surface intervalley scattering on GaAs (nl) Surface intervalley scattering on GaAs(110): Direct observation with picosecond laser photoemission (en) Surface intervalley scattering on GaAs(110): Direct observation with picosecond laser photoemission (sq)
title	wds:Q74496377-F4A5F30E-BCAC-45E7-92C4-B6774926EE1A
title	Surface intervalley scattering on GaAs(110): Direct observation with picosecond laser photoemission (en)
page(s)	wds:Q74496377-8D68FF3F-EB69-4B00-959C-11044845AD00
page(s)	815-818
instance of	wds:Q74496377-56706B82-9DCD-4AD4-B5B4-A6EC73817499
instance of	scholarly article
PubMed ID	wds:Q74496377-D5C4B482-C8F9-4F25-B759-2A565CB05B36
PubMed ID	http://rdf.ncbi.nlm.nih.gov/pubchem/reference/10040340
PubMed ID	10040340
published in	wds:Q74496377-EFD97099-A980-4D34-B7B2-EB0A0F90937E
published in	Physical Review Letters
issue	wds:Q74496377-455DE391-1C3E-480C-87BC-2D06FC5A20F5
volume	wds:Q74496377-61AC586D-1241-4986-B411-246B0AF7451D
issue	7
volume	62
DOI	wds:Q74496377-A5FCC954-C292-408E-BC52-3AC1B1F18E8D
DOI	http://dx.doi.org/10.1103/PHYSREVLETT.62.815
DOI	10.1103/PHYSREVLETT.62.815
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q74496377
is cites work of	Attosecond physics Collapse of long-range charge order tracked by time-resolved photoemission at high momenta Two-photon photoelectron spectroscopy of GaP(110) after sputtering, annealing, and multishot laser damage Calculated atomic structures and electronic properties of GaP, InP, GaAs, and InAs (110) surfaces Emergent photovoltage on SmB6 surface upon bulk-gap evolution revealed by pump-and-probe photoemission spectroscopy Femtosecond tunable nonlinear absorption spectroscopy in Al0.1Ga0.9As Pulsed laser-induced photochemical decomposition of GaAs(110) studied with time-resolved photoelectron spectroscopy using synchrotron radiation Photoelectron spectroscopy of the laser-excited X-bar surface state on GaAs(110) using synchrotron radiation Ultrafast electron dynamics at the Ge(111)2 x 1 surface Highly anisotropic angular dependence of CH3 fragmentation from electron-transfer reactions on CH3Br/GaAs(110)
is cites work of	wds:Q21563843-8E15E8BC-FDCF-4191-A8EE-C6FAD03E3683 wds:Q78212082-2DCBAB4F-1775-47A6-A229-1152CB598F3E wds:Q74516374-17AB321F-955D-4704-B031-18E368F32AFC wds:Q30419034-42C83A7E-07B8-4AC8-AD25-06E34B98A964 wds:Q30632514-26BE7A3B-100D-43FC-B5EC-C3ACEDED1090 wds:Q74512552-7874E2F7-89C5-4BE2-A1D2-776DF05FAC1F wds:Q59071502-6F1A6AC4-462B-44AA-944B-64CF6A119897 wds:Q74547365-6573D651-4443-4CC1-BDF2-8ED04B34F5AB wds:Q31907939-21CE1C32-339E-42F5-8BE7-A9DDE2047F05 wds:Q74376535-66CDFBF9-DCEE-42CC-B668-2654FAE451DB

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