scientific article published on 01 January 1989

AttributesValues
rdf:type
description
  • wetenschappelijk artikel (nl)
  • наукова стаття, опублікована в січні 1989 (uk)
  • article scientifique publié en 1989 (fr)
  • im Januar 1989 veröffentlichter wissenschaftlicher Artikel (de)
  • artículu científicu espublizáu en xineru de 1989 (ast)
  • artikull shkencor i botuar më 01 janar 1989 (sq)
  • scientific article published on 01 January 1989 (en)
publication date
publication date
language of work or name
language of work or name
cites work
cites work
author name string
author name string
  • Li H
  • Huang H
  • Tonner BP
  • Tong SY
  • Wei CM
rdfs:label
  • Quantitative structural determination of metallic film growth on a semiconductor crystal: ( sqrt 3-bar x sqrt 3-bar)R 30 degrees -->(1 x 1) Pb on Ge (111) (en)
  • Quantitative structural determination of metallic film growth on a semiconductor crystal: ( sqrt 3-bar x sqrt 3-bar)R 30 degrees -->(1 x 1) Pb on Ge (111) (sq)
  • Quantitative structural determination of metallic film growth on a semiconductor crystal: (nl)
skos:prefLabel
  • Quantitative structural determination of metallic film growth on a semiconductor crystal: ( sqrt 3-bar x sqrt 3-bar)R 30 degrees -->(1 x 1) Pb on Ge (111) (en)
  • Quantitative structural determination of metallic film growth on a semiconductor crystal: ( sqrt 3-bar x sqrt 3-bar)R 30 degrees -->(1 x 1) Pb on Ge (111) (sq)
  • Quantitative structural determination of metallic film growth on a semiconductor crystal: (nl)
name
  • Quantitative structural determination of metallic film growth on a semiconductor crystal: ( sqrt 3-bar x sqrt 3-bar)R 30 degrees -->(1 x 1) Pb on Ge (111) (en)
  • Quantitative structural determination of metallic film growth on a semiconductor crystal: ( sqrt 3-bar x sqrt 3-bar)R 30 degrees -->(1 x 1) Pb on Ge (111) (sq)
  • Quantitative structural determination of metallic film growth on a semiconductor crystal: (nl)
author
author
title
title
  • Quantitative structural determination of metallic film growth on a semiconductor crystal: ( sqrt 3-bar x sqrt 3-bar)R 30 degrees -->(1 x 1) Pb on Ge (111) (en)
page(s)
page(s)
  • 559-562
instance of
instance of
PubMed ID
PubMed ID
PubMed ID
  • 10040266
published in
published in
issue
volume
issue
  • 5
volume
  • 62
DOI
DOI
DOI
  • 10.1103/PHYSREVLETT.62.559
is about of
is cites work of
is cites work of
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