About: Fermi-level pinning at the Sb/GaAs(110) surface studied by scanning tunneling spectroscopy

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About: Fermi-level pinning at the Sb/GaAs(110) surface studied by scanning tunneling spectroscopy Goto Sponge NotDistinct Permalink

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scientific article published on 01 July 1988

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в липні 1988 (uk) im Juli 1988 veröffentlichter wissenschaftlicher Artikel (de) artículu científicu espublizáu en xunetu de 1988 (ast) scientific article published on 01 July 1988 (en)
publication date	wds:Q74492867-016F4E14-CCF2-447B-8947-CC6242891EE5
publication date	1988-07-01 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q74492867-D60CFFB1-09D9-48B8-AF34-6752A5EAAA91
language of work or name	English
cites work	wds:Q74492867-2417FB79-4F1A-406F-829A-1E796A495182 wds:Q74492867-409A5072-44B1-48E9-9A4C-99E43EC9E781 wds:Q74492867-4274E350-0C61-49B4-8539-1DA322419A51 wds:Q74492867-6B8A60C5-6DFB-4BF7-B5F7-CA9B32F59DBB wds:Q74492867-74F3B5A7-5B45-4148-A706-57050797D6D1 wds:Q74492867-7E4BBDB0-D1AF-40A6-A672-48551ACF39C7 wds:Q74492867-830BC0CE-BF48-43D0-A44C-0A9A0122358B wds:Q74492867-84D8963F-86EB-4806-AFCE-803E4B466355 wds:Q74492867-9EF55CE0-2B01-41C3-B0C8-27139273C13E wds:Q74492867-AC010DA6-2F52-454A-91C9-7B0D900394D5 wds:Q74492867-AF66F09E-6F3F-4467-9582-E3E99BB73ACA wds:Q74492867-C474BD54-8BA8-4037-B3F4-BDA06453581C wds:Q74492867-F75A2D0C-80D2-4999-870F-99F21E96D0D7
cites work	Scanning tunneling microscopy—from birth to adolescence Theory and Application for the Scanning Tunneling Microscope Theory of Scanning Tunneling Microscopy Imaging chemical-bond formation with the scanning tunneling microscope: NH3 dissociation on Si(001) Sb overlayers on (110) surfaces of III-V semiconductors: Total-energy minimization and surface electronic structure Local state density and long-range screening of adsorbed oxygen atoms on the GaAs(110) surface Geometric and local electronic structure of Si(111)-As Electron states of an Sb-ordered overlayer on GaAs(110) Sb/GaAs(110) interface: A reevaluation Unoccupied surface states of (1 x 1) Sb overlayers on GaAs(110) and InP(110) Surface electronic structure of GaAs(110)1 x 1-Sb studied with angle-resolved photoelectron spectroscopy Direct observation of adsorbate-induced band-gap states on GaAs(110) Optical emission properties of interface states for metals on III-V semiconductor compounds
author name string	wds:Q74492867-6051DC92-F1B7-48E0-88B1-A330D17062C6
author name string	Mårtensson P
rdfs:label	Fermi-level pinning at the Sb/GaAs(110) surface studied by scanning tunneling spectroscopy (en) Fermi-level pinning at the Sb/GaAs (nl)
skos:prefLabel	Fermi-level pinning at the Sb/GaAs(110) surface studied by scanning tunneling spectroscopy (en) Fermi-level pinning at the Sb/GaAs (nl)
name	Fermi-level pinning at the Sb/GaAs(110) surface studied by scanning tunneling spectroscopy (en) Fermi-level pinning at the Sb/GaAs (nl)
author	wds:Q74492867-12AD7DF2-C54D-4321-BCF6-112B6CA5B2F9
author	Randall M. Feenstra
title	wds:Q74492867-F68CB80E-C18C-4EAF-A0B7-477C7816B94D
title	Fermi-level pinning at the Sb/GaAs(110) surface studied by scanning tunneling spectroscopy (en)
page(s)	wds:Q74492867-B9D44775-AA50-4956-A703-AE8AD29C7434
page(s)	447-450
instance of	wds:Q74492867-B082944A-547B-42A7-A897-D433D0D1243D
instance of	scholarly article
main subject	wds:Q74492867-7E2F5ADB-2127-40B9-AD5E-95CBDAA39464
main subject	spectroscopy
PubMed ID	wds:Q74492867-A5F0DA73-6796-4625-9A1D-626D79795A24
PubMed ID	http://rdf.ncbi.nlm.nih.gov/pubchem/reference/10039335
PubMed ID	10039335
published in	wds:Q74492867-36F2F584-D5E9-4DF7-8845-9A24A867B3D2
published in	Physical Review Letters
issue	wds:Q74492867-8E4632A8-907E-4AAC-9641-D50B2000C63D
volume	wds:Q74492867-4D674CD9-0A73-4D37-9D7F-15954CD097C9
issue	4
volume	61
DOI	wds:Q74492867-2B17CED7-F1A9-46FB-A6A4-0F2D1F3B2027
DOI	http://dx.doi.org/10.1103/PHYSREVLETT.61.447
DOI	10.1103/PHYSREVLETT.61.447
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q74492867
is cites work of	Silicon L2,3 core absorption obtained at the buried Al/Si(111) interface Potential-barrier measurements at clustered metal-semiconductor interfaces Inelastic electron scattering investigation of the Sb/GaAs(110) system Insulating Cs overlayer on InSb(110) Cluster deposition on GaAs(110): Formation of abrupt, defect-free interfaces Scanning-tunneling-microscopy observation of aluminum on GaAs(110) surfaces Chemisorption of antimony on GaAs(110) Observation of interface phonons by light scattering from epitaxial Sb monolayers on III-V semiconductors Optical properties of Sb-terminated GaAs and InP (110) surfaces Abrupt interfaces with novel structural and electronic properties: Metal-cluster deposition and metal-semiconductor junctions Electronic and structural properties of a discommensurate monolayer system: GaAs(110)-(1 x 1)Bi Sb and Bi on GaAs(110): Substrate-stabilized overlayer structures studied with scanning tunneling microscopy One-dimensional "dislocation-related" electronic states at the GaAs(110)-Bi(1 x 1) interface Structural characterization of the (1 monolayer Sb)/GaP(110) interface using x-ray standing waves Optical Properties of Ordered As Layers on InP(110) Surfaces Resonant inverse-photoemission study of layer-dependent surface states at the epitaxial GaAs(110)-Bi interface Evolution of empty-state bands for Bi/GaAs(110): From Bi zigzag chains to ordered overlayers Epitaxial Sn and Bi on GaAs(110): Inverse photoemission, shallow core-hole emission, and Ga 3d excitons Long-range ordering of Sb multilayers on GaAs(110): Evolution of resonant inverse photoemission Metal-InP(110) interface properties: Temperature, dopant-concentration, and cluster-deposition dependencies Surface extended x-ray-absorption fine-structure study of the (1 monolayer Sb)/GaP(110) interface Evidence for Fermi-energy pinning relative to either valence or conduction band in Schottky barriers Antimony-induced electronic states in the Sb/InP(110) interface studied by high-resolution electron-energy-loss spectroscopy Anion-specific surface valence-band states in heteropolar semiconductors: The case of GaP(110) and InP(110) Effect of nonthermally activated hopping on overlayer morphology: Scanning-tunneling-microscopy study of Ti/GaAs(110) Theory of Schottky-contact formation on GaAs(110) Bismuth on GaSb(110): Electronic and dielectric properties Electronic band structure of the two-dimensional surface-state bands of the (1 x 1) and (1 x 2) phases of Bi/GaSb(110) Morphology and barrier-height development of Bi/InP(110) interfaces. Metal-induced gap states at InAs(110) surface Orientational ordering and domain-wall formation in Sb overlayers on GaAs(110) Morphology and transport properties of nanostructural gold on silicon Rare-earth growth structures on GaAs(110): Ce, Sm, and Yb

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