About: hcp to fcc transition in silicon at 78 GPa and studies to 100 GPa

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About: hcp to fcc transition in silicon at 78 GPa and studies to 100 GPa Goto Sponge NotDistinct Permalink

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scientific article published on 01 February 1987

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в лютому 1987 (uk) im Februar 1987 veröffentlichter wissenschaftlicher Artikel (de) artículu científicu espublizáu en febreru de 1987 (ast) artikull shkencor i botuar më 01 shkurt 1987 (sq) scientific article published on 01 February 1987 (en)
publication date	wds:Q74479511-5A22DD9E-C07E-45CB-98ED-263680EA08D6
publication date	1987-02-01 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q74479511-4C256C17-9F1C-46E0-A8B5-3F8CD6366195
language of work or name	English
cites work	wds:Q74479511-1841EEB5-B452-421A-893E-DE9C111C1D81 wds:Q74479511-1BC6720B-5077-457B-BFBF-D78E7FC2C2DA wds:Q74479511-24E8EBD2-FEF3-404F-A750-E8E5D70EC462 wds:Q74479511-4785FD80-4107-4CD6-A97A-80A38EEEFCDF wds:Q74479511-84FB0607-6288-4F89-BFBA-9E4702E0EF06
cites work	Diamond anvil cell and high-pressure physical investigations Crystal data for high-pressure phases of silicon Solid-solid phase transitions and soft phonon modes in highly condensed Si Crystal structures at megabar pressures determined by use of the cornell synchrotron source Phase transition studies of germanium to 1.25 Mbar
author name string	wds:Q74479511-1F9606B6-069A-4834-BF35-5FDC2F831C24 wds:Q74479511-6F8FB91D-0059-42E1-A704-A9C148B82928 wds:Q74479511-A2581912-30F8-4339-B8B2-6904A5602223
author name string	Vohra YK Duclos SJ Ruoff AL
rdfs:label	hcp to fcc transition in silicon at 78 GPa and studies to 100 GPa (en) hcp to fcc transition in silicon at 78 GPa and studies to 100 GPa (nl) hcp to fcc transition in silicon at 78 GPa and studies to 100 GPa (sq)
skos:prefLabel	hcp to fcc transition in silicon at 78 GPa and studies to 100 GPa (en) hcp to fcc transition in silicon at 78 GPa and studies to 100 GPa (nl) hcp to fcc transition in silicon at 78 GPa and studies to 100 GPa (sq)
name	hcp to fcc transition in silicon at 78 GPa and studies to 100 GPa (en) hcp to fcc transition in silicon at 78 GPa and studies to 100 GPa (nl) hcp to fcc transition in silicon at 78 GPa and studies to 100 GPa (sq)
title	wds:Q74479511-BD2AC411-9C6D-4A7E-AE7D-D89AD58D2AB1
title	hcp to fcc transition in silicon at 78 GPa and studies to 100 GPa (en)
page(s)	wds:Q74479511-41B56FF2-2B3D-48A0-936E-F67CD371DEC5
page(s)	775-777
instance of	wds:Q74479511-0A5E31F6-9DCB-4E31-B86B-4B29C1E7BE3E
instance of	scholarly article
PubMed ID	wds:Q74479511-04C1F670-77C3-43E4-AFD5-BA4C98C54D92
PubMed ID	http://rdf.ncbi.nlm.nih.gov/pubchem/reference/10035033
PubMed ID	10035033
published in	wds:Q74479511-BA8185D1-3457-4907-A134-33BB12D1FABC
published in	Physical Review Letters
issue	wds:Q74479511-4E0E3BF0-9710-4ACB-A420-C1128E5E8C67
volume	wds:Q74479511-8BF64F28-7D5C-4D34-9111-23B9AE8912FA
issue	8
volume	58
DOI	wds:Q74479511-A896C241-1056-4306-A2B1-B9C5C1028DC1
DOI	http://dx.doi.org/10.1103/PHYSREVLETT.58.775
DOI	10.1103/PHYSREVLETT.58.775
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q74479511
is cites work of	Superconductivity at approximately 100 K in dense SiH4(H2)2 predicted by first principles. Phase transition lowering in dynamically compressed silicon New high-pressure phase of Si Pressure dependence of the Imma phase of silicon Theoretical study of Raman modes in high-pressure phases of Si, Ge, and Sn Proposed mechanism of HCP → FCC phase transition in titianium through first principles calculation and experiments. First-principles pseudopotential study of the structural phases of silicon Optical properties of metallic silicon Quasi-hydrostatic equation of state of silicon up to 1 megabar at ambient temperature Phase transitions in GaSb to 110 GPa (1.1 Mbar) Total energy, lattice dynamics, and structural phase transitions in silicon by the orthogonalized linear combination of atomic orbitals method Pressure-driven phase transitions and reduction of dimensionality in 2D silicon nanosheets Theory of electronic, vibrational, and superconducting properties of fcc silicon
is cites work of	wds:Q60028921-60C4EA35-A2C8-4D6E-BDBE-7ADF1832E721 wds:Q49296994-1B786707-7A5A-4B8E-BB72-1A6567E4C516 wds:Q78005324-F9E0F6D3-A325-47B5-BF38-5806A8FC0CEE wds:Q60300356-37B4383C-C915-4212-AA3B-75DBF6FFB3C6 wds:Q78124395-AC035650-EA82-4924-AB44-22DBE501ADFB wds:Q90999473-A4C91A12-A601-46D4-896D-51B2F195FDA6 wds:Q34115599-10BAE8FA-18E3-41D6-B3C1-A13F5CE0F6A8 wds:Q78116385-71A315F6-5058-4312-8485-190D1EBBA919 wds:Q77995156-BC459D84-AE4B-4BC7-A4A8-39EE335D3107 wds:Q78193246-230BC152-FF2E-42FA-8117-40152DE4F386 wds:Q77996637-7B3C4B7B-02F4-43F9-BFC2-6CE58FC4B259 wds:Q74394760-F7FC8543-388F-4A4E-A74D-E35DC158A4B2 wds:Q74375089-3B41607B-9CB1-453E-B11D-4E2764EC5012

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