About: Initial stages of Ge/GaAs(100) interface formation

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scientific article published on 01 February 1994

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в лютому 1994 (uk) article scientifique publié en 1994 (fr) im Februar 1994 veröffentlichter wissenschaftlicher Artikel (de) artículu científicu espublizáu en febreru de 1994 (ast) artikull shkencor i botuar më 01 shkurt 1994 (sq) scientific article published on 01 February 1994 (en)
publication date	wds:Q74406914-3DDA2773-3B87-4746-9A92-BDCAB5556055
publication date	1994-02-01 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q74406914-3D991C25-120C-4DCF-88F8-CABBD517A58C
language of work or name	English
cites work	wds:Q74406914-0FB8DCAF-371E-425E-B24A-E2A1F1AB9B24 wds:Q74406914-28A5F888-0D5A-4A37-8277-EB0C0045DD48 wds:Q74406914-4AACD3A8-4D3F-4497-8530-DEEB5A514428 wds:Q74406914-8136DE46-C517-47D1-A445-58A57F5EF9BC wds:Q74406914-89AB7E9B-9513-49AC-9C5D-8C908E1D62C5
cites work	Microscopic capacitors and neutral interfaces in III-V/IV/III-V semiconductor heterostructures Wavy steps on Si(001) Comment on "Structure and composition of GaAs(001) surfaces" Imaging chemical-bond formation with the scanning tunneling microscope: NH3 dissociation on Si(001) Epitaxial growth and band bending of n- and p-type Ge on GaAs(001)
author name string	wds:Q74406914-09143273-199C-47E5-BD5F-BF4C04C16341 wds:Q74406914-375AC553-9240-4D8D-BDD7-E483D2911C22 wds:Q74406914-60A20409-C1FF-4902-817E-33B9EE9EA8D1 wds:Q74406914-C399796D-A4CA-4760-8C09-FF6CDC79B885
author name string	Maboudian R Bressler-Hill V V Self K Weinberg WH
rdfs:label	Initial stages of Ge/GaAs (nl) Initial stages of Ge/GaAs(100) interface formation (en) Initial stages of Ge/GaAs(100) interface formation (sq)
skos:prefLabel	Initial stages of Ge/GaAs (nl) Initial stages of Ge/GaAs(100) interface formation (en) Initial stages of Ge/GaAs(100) interface formation (sq)
name	Initial stages of Ge/GaAs (nl) Initial stages of Ge/GaAs(100) interface formation (en) Initial stages of Ge/GaAs(100) interface formation (sq)
author	wds:Q74406914-7B84E737-CD7C-4840-AF37-2E9C2432AB81
author	Xue-Sen Wang
title	wds:Q74406914-290F26AE-80A6-4659-92F8-B6AAE4941D35
title	Initial stages of Ge/GaAs(100) interface formation (en)
page(s)	wds:Q74406914-485586A8-BBA1-4210-987E-D01AB0D7E750
page(s)	4775-4779
instance of	wds:Q74406914-0B42C416-DD22-4160-88CD-A45C02AD2D28
instance of	scholarly article
PubMed ID	wds:Q74406914-F6D25AD6-D734-44AC-8F0E-B12D6A5011DA
PubMed ID	http://rdf.ncbi.nlm.nih.gov/pubchem/reference/10011405
PubMed ID	10011405
published in	wds:Q74406914-3B809E9B-B1D0-40F5-AFDD-BA38F1ADDC1E
published in	Physical Review B
issue	wds:Q74406914-23B711DD-B9FA-4363-9BDB-9A34958B21D6
volume	wds:Q74406914-493E3032-0D91-490F-A5B0-9E45580ACD4E
issue	7
volume	49
DOI	wds:Q74406914-A51439C0-216F-4887-8058-589BB679507B
DOI	http://dx.doi.org/10.1103/PHYSREVB.49.4775
DOI	10.1103/PHYSREVB.49.4775
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q74406914
is cites work of	Effect of film growth rate and thickness on properties of Ge/GaAs(100) thin films
is cites work of	wds:Q61715727-422D0720-6D93-4C3F-80A6-2123183D707A

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