About: Trapping effects in a-Si:H investigated by small-signal transient photoconductivity and the steady-state photocarrier-grating technique

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About: Trapping effects in a-Si:H investigated by small-signal transient photoconductivity and the steady-state photocarrier-grating technique Goto Sponge NotDistinct Permalink

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scientific article published on 01 May 1994

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в травні 1994 (uk) article scientifique publié en 1994 (fr) im Mai 1994 veröffentlichter wissenschaftlicher Artikel (de) artículu científicu espublizáu en mayu de 1994 (ast) scientific article published on 01 May 1994 (en)
publication date	wds:Q74402320-31A8C54C-FD8E-4C79-B568-7A326683FF84
publication date	1994-05-01 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q74402320-DDF71644-9458-44EE-AF32-E5AE91423803
language of work or name	English
cites work	wds:Q74402320-028485E3-C4C1-46A7-B344-ADCA95240846 wds:Q74402320-06C0B171-E4CA-4B9A-9380-2C6718A93680 wds:Q74402320-86E6D9D8-AE9B-47FC-908B-F35889F61B80 wds:Q74402320-930B868D-4833-49E0-91A4-F651C4126B39 wds:Q74402320-C23D5F53-A155-4338-B3E6-3B6C12A96723 wds:Q74402320-DC304C99-10E0-4AD2-A182-020A1E9B3394
cites work	Reversible conductivity changes in discharge‐produced amorphous Si Optical-bias-enhanced transient photocurrent in amorphous silicon. Ambipolar drift-length measurement in amorphous hydrogenated silicon using the steady-state photocarrier grating technique. Photocarrier dynamics in a-Si:H: Effects of bias illumination Ambipolar transport in amorphous semiconductors in the lifetime and relaxation-time regimes investigated by the steady-state photocarrier grating technique Phototransport under the presence of a small steady-state photocarrier grating
author name string	wds:Q74402320-558C0572-36F9-499D-BCE1-AD168813F6AE wds:Q74402320-A9BBB718-EF03-48A4-8C3E-1470CACF1F52 wds:Q74402320-E360D5E7-0792-4F22-94A3-08C22CD719C2
author name string	Weiser K Haridim M Zelikson M
rdfs:label	Trapping effects in a-Si:H investigated by small-signal transient photoconductivity and the steady-state photocarrier-grating technique (en) Trapping effects in a-Si:H investigated by small-signal transient photoconductivity and the steady-state photocarrier-grating technique (nl)
skos:prefLabel	Trapping effects in a-Si:H investigated by small-signal transient photoconductivity and the steady-state photocarrier-grating technique (en) Trapping effects in a-Si:H investigated by small-signal transient photoconductivity and the steady-state photocarrier-grating technique (nl)
name	Trapping effects in a-Si:H investigated by small-signal transient photoconductivity and the steady-state photocarrier-grating technique (en) Trapping effects in a-Si:H investigated by small-signal transient photoconductivity and the steady-state photocarrier-grating technique (nl)
title	wds:Q74402320-3A96A335-35E5-475B-9200-79DBF0BD9DA2
title	Trapping effects in a-Si:H investigated by small-signal transient photoconductivity and the steady-state photocarrier-grating technique (en)
page(s)	wds:Q74402320-5809484B-0C6B-4F9D-A843-5E39D6AFCFFC
page(s)	13394-13399
instance of	wds:Q74402320-83EA2CC5-3F5F-4503-8941-CD1E47E01BAE
instance of	scholarly article
PubMed ID	wds:Q74402320-67EC406F-E37B-4F43-8CD7-774AFA9E15A2
PubMed ID	http://rdf.ncbi.nlm.nih.gov/pubchem/reference/10010274
PubMed ID	10010274
published in	wds:Q74402320-EAB51F40-476C-49E6-9A8A-797EAE7E5BE8
published in	Physical Review B
issue	wds:Q74402320-DA2BC293-F594-482E-A3E6-882A2A179B26
volume	wds:Q74402320-AC12C8E0-7D95-4938-8F2F-B6FD278F92F6
issue	19
volume	49
number of pages	wds:Q74402320-20A7C605-F266-41CD-AFF4-0F09FCD631EE
number of pages	6 (xsd:decimal)
DOI	wds:Q74402320-BCAEA4A0-B508-42D0-BA20-F71E05298D25
DOI	http://dx.doi.org/10.1103/PHYSREVB.49.13394
DOI	10.1103/PHYSREVB.49.13394
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q74402320
is cites work of	Analysis of the moving-photocarrier-grating technique for the determination of mobility and lifetime of photocarriers in semiconductors Comprehensive numerical simulation of defect density and temperature-dependent transport properties in hydrogenated amorphous silicon
is cites work of	wds:Q78124839-406BD6CA-E561-4D0F-90EB-03EAC3C44F4B wds:Q59903500-FA1EF453-456C-493E-95E4-38FA824BEFA1

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