About: Persistent photoconductivity and photoionization of deep electron traps in Ga-doped Cd1-xMnxTe

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About: Persistent photoconductivity and photoionization of deep electron traps in Ga-doped Cd1-xMnxTe Goto Sponge NotDistinct Permalink

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scientific article published on 01 May 1993

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в травні 1993 (uk) article scientifique publié en 1993 (fr) im Mai 1993 veröffentlichter wissenschaftlicher Artikel (de) artículu científicu espublizáu en mayu de 1993 (ast) scientific article published on 01 May 1993 (en)
publication date	wds:Q74377967-4C690660-2C63-465D-95D3-BEC3D0881E5C
publication date	1993-05-01 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q74377967-4D11A77E-A688-40BD-B4E2-3A2404C949ED
language of work or name	English
cites work	wds:Q74377967-0ABA3A27-D40A-4A83-93CC-5CD6D43744C1 wds:Q74377967-27C61B04-7677-4F4D-B6B9-4D7E98251497 wds:Q74377967-5164AA05-63B8-479F-B240-AC3F7C49DF51 wds:Q74377967-7A3BB7D0-7C2F-4E19-97C5-477AAE15F089 wds:Q74377967-8136FBC6-9903-48C4-9BE9-B23A26B1015D wds:Q74377967-898F2F62-7131-4A97-A83B-AB162982F90A wds:Q74377967-9A915AA3-7683-4DA2-B9ED-B165BBA95AF8 wds:Q74377967-9B2063AB-0603-4E09-90D5-30B3D3504D67 wds:Q74377967-C55D1E36-C266-46CC-AA1A-469BE4D068A3 wds:Q74377967-D2B5553C-6050-4463-8A10-F703548CCE66 wds:Q74377967-FA0DA053-F1A8-4502-80A2-0FBAD2BC322E
cites work	Theory of Light Absorption and Non-Radiative Transitions in F-Centres Percolation transition of persistent photoconductivity in II-VI mixed crystals Decay kinetics of persistent photoconductivity in semiconductors Persistent photoconductivity and related critical phenomena in Zn0.3Cd0.7Se Energetics of DX-center formation in GaAs and AlxGa1-xAs alloys. Theory of the atomic and electronic structure of DX centers in GaAs and AlxGa1-xAs alloys Nonexponential relaxation of conductance near semiconductor interfaces Direct evidence for two-step photoionization of DX (Te) centers in AlxGa1-xAs Relaxation of stored charge carriers in a Zn0.3Cd0.7Se mixed crystal Photoionization of the DX(Te) centers in AlxGa1-xAs: Evidence for a negative-U character of the defect Lattice relaxation of DX-like donors in ZnxCd1-xTe
author name string	wds:Q74377967-378E3FC2-6729-487D-97F5-0254B28DCA4C wds:Q74377967-6DEE73ED-0DB0-46A4-9DAA-DBF6A240E178 wds:Q74377967-D7BEB473-A06B-4F61-9738-FB5F500F0D2A wds:Q74377967-F635A76A-202D-4D4D-A44C-64413635081A
author name string	Wojtowicz T Furdyna JK Karczewski G Semaltianos NG
rdfs:label	Persistent photoconductivity and photoionization of deep electron traps in Ga-doped Cd1-xMnxTe (en) Persistent photoconductivity and photoionization of deep electron traps in Ga-doped Cd1-xMnxTe (nl)
skos:prefLabel	Persistent photoconductivity and photoionization of deep electron traps in Ga-doped Cd1-xMnxTe (en) Persistent photoconductivity and photoionization of deep electron traps in Ga-doped Cd1-xMnxTe (nl)
name	Persistent photoconductivity and photoionization of deep electron traps in Ga-doped Cd1-xMnxTe (en) Persistent photoconductivity and photoionization of deep electron traps in Ga-doped Cd1-xMnxTe (nl)
title	wds:Q74377967-C68400C4-B72E-4A5D-ADCB-01FFB5FC7997
title	Persistent photoconductivity and photoionization of deep electron traps in Ga-doped Cd1-xMnxTe (en)
page(s)	wds:Q74377967-0D1B3154-DB68-4F71-A982-24DEA2F2C0CA
page(s)	12540-12549
instance of	wds:Q74377967-131D6E73-1D86-49FB-9576-6ABF39547D52
instance of	scholarly article
PubMed ID	wds:Q74377967-A2C77901-ABFD-4E4A-AB33-663F0A2F6A0D
PubMed ID	http://rdf.ncbi.nlm.nih.gov/pubchem/reference/10005446
PubMed ID	10005446
published in	wds:Q74377967-C6E5A0AF-DCCB-4262-9E0E-1C7D8577068B
published in	Physical Review B
issue	wds:Q74377967-69355616-09A6-49AF-B96D-22DF1ABB5D9D
volume	wds:Q74377967-B66D2314-AFCB-47FB-BFD2-85DBA078F90B
issue	19
volume	47
DOI	wds:Q74377967-76C950FF-C6DC-4FE7-AC69-70A2BAB16AD9
DOI	http://dx.doi.org/10.1103/PHYSREVB.47.12540
DOI	10.1103/PHYSREVB.47.12540
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q74377967
is cites work of	Deep-level defects responsible for persistent photoconductivity in Ga-doped Cd1-xMnxTe
is cites work of	wds:Q78128332-897D6A4F-42D6-4D3D-8900-4A760EE0CD26

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