About: Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate

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About: Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate Goto Sponge NotDistinct Permalink

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rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в травні 2002 (uk) im Mai 2002 veröffentlichter wissenschaftlicher Artikel (de)
publication date	wds:Q62605669-C595D89F-C506-4898-A76C-7A3C1289F781
publication date	2002-05-20 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q62605669-7B06D6BE-23D1-4C96-80C9-A655B59F7928
language of work or name	English
cites work	wds:Q62605669-51A74835-26B0-4613-9EE3-EFCF0D51B391 wds:Q62605669-6CCD8289-1FA4-4801-B35E-B2180BB700BF wds:Q62605669-C0B5F96D-167A-4ACA-AD31-CB60AB610F1A wds:Q62605669-D32C89FF-AAA3-4FDB-B5B2-D5C5C13813E2 wds:Q62605669-F84039F8-D3DE-4510-9F86-D2F6FF0F0149
cites work	Vertically self-organized InAs quantum box islands on GaAs(100) Red-Emitting Semiconductor Quantum Dot Lasers Red-light-emitting injection laser based on InP/GaInP self-assembled quantum dots High-power quantum-dot lasers at 1100 nm High-performance 980 nm quantum dot lasers for high-power applications
author name string	wds:Q62605669-572B3603-4A41-4FBF-9686-F5732C2D50B5 wds:Q62605669-692788CC-08CE-4FCA-8EC8-142CE602719E wds:Q62605669-6FE10DAB-DE51-49A2-9815-92C95A696CD3 wds:Q62605669-7436B3B3-B2D6-4BFB-992F-CE6722FFE952 wds:Q62605669-BD4AB18A-D5F3-4DFF-9CFC-D6CFFD5C0FF6 wds:Q62605669-D4154549-421F-4F15-9FF5-6227D4C90C8C wds:Q62605669-EE9AEADA-4FA5-4042-A2E1-1DA9855E9CA7 wds:Q62605669-FCEA948D-3E1E-47F9-BCA8-0E302562681C
author name string	B. Xu P. A. Houston H. Y. Liu Z. G. Wang M. J. Steer I. R. Sellers R. J. Airey J. Cockburn
rdfs:label	Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate (en) Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate (nl)
skos:prefLabel	Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate (en) Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate (nl)
name	Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate (en) Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate (nl)
author	wds:Q62605669-B34755FD-E11A-4B51-938D-AC91815D3EAB wds:Q62605669-DE5948F9-9B2A-419C-9E47-C6C87DF29BD0
author	Maurice S. Skolnick David J. Mowbray
title	wds:Q62605669-17A1903D-D79D-44B1-BFBE-79DD26AA229C
title	Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate (en)
page(s)	wds:Q62605669-F1CC3069-F540-4E87-AA3F-AEA76D5E6F5C
page(s)	3769-3771
instance of	wds:Q62605669-C08505EE-C71E-4DAB-A599-C091A6617D88
instance of	scholarly article
main subject	wds:Q62605669-503090EC-C44E-47F2-B6AA-EDA222A8BE19
main subject	quantum dot
published in	wds:Q62605669-BA97A304-F469-463E-BD5A-BB245138189C
published in	Applied Physics Letters
issue	wds:Q62605669-B50740D5-5B14-46C6-8BE5-B2F33EFCFD51
volume	wds:Q62605669-76055302-262D-45DD-B16D-B366856FBF07
issue	20
volume	80
DOI	wds:Q62605669-BC1B5B0D-BA2D-4089-9684-7AB7E288EC81
DOI	http://dx.doi.org/10.1063/1.1481245
DOI	10.1063/1.1481245
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q62605669
is cites work of	Tuning the structural and optical properties of 1.3-μm InAs/GaAs quantum dots by a combined InAlAs and GaAs strained buffer layer
is cites work of	wds:Q62518717-F0E4E45E-970C-4834-A817-BD9C4BF082B4

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