About: Voltage-controlled sharp-line electroluminescence in GaAs-AlAs double-barrier resonant-tunneling structures

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About: Voltage-controlled sharp-line electroluminescence in GaAs-AlAs double-barrier resonant-tunneling structures Goto Sponge NotDistinct Permalink

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scholarly article in Physical Review B, vol. 58 no. 8, August 1998

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в серпні 1998 (uk) article scientifique publié en 1998 (fr) im August 1998 veröffentlichter wissenschaftlicher Artikel (de) scholarly article in Physical Review B, vol. 58 no. 8, August 1998 (en)
publication date	wds:Q62439586-17255F50-A7BD-466B-AFA5-2F6E7A1D477A
publication date	1998-08-15 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q62439586-D26A4883-46F4-4FA4-94E7-4E30A23FB1D3
language of work or name	English
cites work	wds:Q62439586-51CB111B-E4E0-4645-91DB-9D17010E4554 wds:Q62439586-6108C3AB-6B95-46E8-9493-A9A564E271D4 wds:Q62439586-6DAC882C-94BD-418D-A785-DE4E156090EE wds:Q62439586-8103F0EF-2BC0-4F30-8867-D27FE7AF0460 wds:Q62439586-B1E50652-6F27-4AD7-9D25-0DD93B0E4894 wds:Q62439586-B43223C5-C1E5-4BDA-B3B5-014770FAFAF1 wds:Q62439586-CF0EF3F8-E0E5-4B6E-A02F-55F00F292697 wds:Q62439586-E345BCB1-2467-44D7-96A5-50C211BBDC84 wds:Q62439586-E5CEB7F9-60B1-4412-8160-96CC366C1B6F wds:Q62439586-E6A54DC0-793F-4B25-9578-1CA9F7945176 wds:Q62439586-FB38853D-4201-42AF-91AB-05DA9BDD67B4 wds:Q62439586-FECEA2F8-15F8-42CD-977F-A02EEDB689EF
cites work	Photoluminescence from a single GaAs/AlGaAs quantum dot Fine structure splitting in the optical spectra of single GaAs quantum dots High-resolution spectroscopy of defect-bound excitons and acceptors in GaAs grown by molecular-beam epitaxy Quantum dots formed by interface fluctuations in AlAs/GaAs coupled quantum well structures Unambiguous observation of the 2s state of the light- and heavy-hole excitons in GaAs-(AlGa)As multiple-quantum-well structures Photohole-induced resonant tunneling of electrons in selectively etched small area GaAs/AlAs double barrier diodes Single quantum dots as local probes of electronic properties of semiconductors Extrinsic photoluminescence from GaAs quantum wells Binding energies of excited shallow acceptor states in GaAs/Ga1-xAlxAs quantum wells Zeeman spectroscopy of the defect-induced bound-exciton lines in GaAs grown by molecular-beam epitaxy Quantum well luminescence at acceptors in p-i-n resonant tunnelling diodes Resonant magnetotunnelling of electrons and holes in a p-i-n diode device incorporating a double barrier structure
author name string	wds:Q62439586-0D2BDD25-7F46-44D6-94FE-3AF6EDC6341A wds:Q62439586-292830D4-639B-4DBC-9733-62A94615BD27 wds:Q62439586-58CD3F24-58CD-44FC-928C-1846B595D084 wds:Q62439586-9058EC8F-24DB-40F2-8D0A-ED1B294A3A5C
author name string	G. A. Roberts J. J. Finley I. A. Larkin J. W. Cockburn
rdfs:label	Voltage-controlled sharp-line electroluminescence in GaAs-AlAs double-barrier resonant-tunneling structures (en) Voltage-controlled sharp-line electroluminescence in GaAs-AlAs double-barrier resonant-tunneling structures (nl)
skos:prefLabel	Voltage-controlled sharp-line electroluminescence in GaAs-AlAs double-barrier resonant-tunneling structures (en) Voltage-controlled sharp-line electroluminescence in GaAs-AlAs double-barrier resonant-tunneling structures (nl)
name	Voltage-controlled sharp-line electroluminescence in GaAs-AlAs double-barrier resonant-tunneling structures (en) Voltage-controlled sharp-line electroluminescence in GaAs-AlAs double-barrier resonant-tunneling structures (nl)
author	wds:Q62439586-02E32A7A-9241-4D80-9D03-989C716E7729 wds:Q62439586-42DCA532-1369-4150-A65A-C9E1AB211A78 wds:Q62439586-4C1BEDFB-C926-47CC-9360-CB87A1A87578 wds:Q62439586-5CA97975-E385-4F15-A217-3F2AD9FAA2FD
author	Laurence Eaves Mohamed Henini Geoff Hill Maurice S. Skolnick
title	wds:Q62439586-A8521463-D5F7-4DDA-9926-A446F1CA6F19
title	Voltage-controlled sharp-line electroluminescence in GaAs-AlAs double-barrier resonant-tunneling structures (en)
page(s)	wds:Q62439586-042E5F73-C438-4F53-BF0C-E5AF8729C060
page(s)	R4242-R4245
instance of	wds:Q62439586-2DC97834-FEDA-4BED-B6D1-B58A3F81AAF7
instance of	scholarly article
published in	wds:Q62439586-0DD03A0E-DBDD-4CA0-865E-77036E7A3296
published in	Physical Review B
issue	wds:Q62439586-8EFAA3FF-4FAE-4A20-BA15-D4AEA8B69F65
volume	wds:Q62439586-85705F23-A2B9-42B2-8831-84D0D71117E9
issue	8
volume	58
DOI	wds:Q62439586-7165F3AA-7B49-486D-8B40-ED50C5E24C1B
DOI	http://dx.doi.org/10.1103/PHYSREVB.58.R4242
DOI	10.1103/PHYSREVB.58.R4242
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q62439586
is cites work of	Single dopants in semiconductors
is cites work of	wds:Q34160404-686FA310-F05D-402C-8605-5E88B8B426D2

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