About: Theory of random population for quantum dots

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scholarly article in Physical Review B, vol. 55 no. 15, April 1997

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована у квітні 1997 (uk) im April 1997 veröffentlichter wissenschaftlicher Artikel (de) scholarly article in Physical Review B, vol. 55 no. 15, April 1997 (en)
publication date	wds:Q62395028-44DD617E-E4D7-468C-854B-8473D7B55AFA
publication date	1997-04-15 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q62395028-81BCDFF8-AD29-410F-8399-B0B615FBD68D
language of work or name	English
author name string	wds:Q62395028-A460067D-2B73-4769-97C1-844E75C4DF07
author name string	M. Grundmann
rdfs:label	Theory of random population for quantum dots (en) Theory of random population for quantum dots (nl)
skos:prefLabel	Theory of random population for quantum dots (en) Theory of random population for quantum dots (nl)
name	Theory of random population for quantum dots (en) Theory of random population for quantum dots (nl)
author	wds:Q62395028-5D171A33-8F60-4883-B05D-8F7600EADB32
author	Dieter Bimberg
title	wds:Q62395028-8B6A68E9-D640-47A9-AA61-CA1AA920A8DF
title	Theory of random population for quantum dots (en)
page(s)	wds:Q62395028-EF1AC9A8-5F25-41E5-8076-1FC48A6CF9F0
page(s)	9740-9745
instance of	wds:Q62395028-8D787351-DF66-41AC-9B6A-F229EBE95CA6
instance of	scholarly article
main subject	wds:Q62395028-7EB6F9D1-9A42-436E-B380-BC1F047AE1AA
main subject	quantum dot
published in	wds:Q62395028-D42099CB-DB6A-4284-B557-3C0A91D48197
published in	Physical Review B
issue	wds:Q62395028-28F6D846-48A1-4DFD-B0EC-1319D7769F97
volume	wds:Q62395028-7206FA50-A7C4-4B17-811D-16D8B9DCE561
issue	15
volume	55
DOI	wds:Q62395028-6EFD32D7-37B5-4E50-94F8-C5DD5E9C278C
DOI	http://dx.doi.org/10.1103/PHYSREVB.55.9740
DOI	10.1103/PHYSREVB.55.9740
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q62395028
is cites work of	Self-consistent Coulomb effects and charge distribution of quantum dot arrays The present status of quantum dot lasers InAs quantum dots grown on nonconventionally oriented GaAs substrates Dynamical Redistribution of Mean Electron Spin over the Energy Spectrum of Quantum Dots Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots Emission spectra and mode structure of InAs/GaAs self-organized quantum dot lasers How a quantum-dot laser turns on Theory of Quantum Dot Laser Gain and Threshold: Correlated versus Uncorrelated Electron and Hole Capture Intersublevel Emission in InAs/GaAs Quantum Dots Intensity noise in quantum-dot laser diodes Temperature dependence of the photoluminescence of InGaAs/GaAs quantum dot structures without wetting layer Novel Infrared Quantum Dot Lasers: Theory and Reality Quantum dot lasers: breakthrough in optoelectronics Hot carrier relaxation in InAs/GaAs quantum dots Effects of post-growth annealing on the optical properties of self-assembled GaAs/AlGaAs quantum dots Quantum-dot exciton dynamics probed by photon-correlation spectroscopy Light-emitting devices based on top-down fabricated GaAs quantum nanodisks Chapter 5 The Photon Bottleneck Effect in Quantum Dots Modal gain and lasing states in InAs/GaAs self-organized quantum dot lasers Effect of carrier confinement on effective mass of excitons and estimation of ultralow disorder in Al x Ga1-x As/GaAs quantum wells by magneto-photoluminescence Application of self-organized quantum dots to edge emitting and vertical cavity lasers Edge and vertical cavity surface emitting InAs quantum dot lasers Comment on “Problems in recent analysis of injected carrier dynamics in semiconductor quantum dots” [Appl. Phys. Lett. 79, 3912 (2001)] New approach to modeling carrier distribution in quantum dot ensembles: Gain and threshold of QD lasers and impact of phonon bottleneck Optical Spectroscopic Study of Carrier Processes in Self-Assembled In(Ga)As-Ga(Al)As Quantum Dot Lasers InAs–GaAs self-assembled quantum dot lasers: physical processes and device characteristics Bimodal distribution of Indium composition in arrays of low-pressure metalorganic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots Relaxation and dephasing of multiexcitons in semiconductor quantum dots Semiconductor quantum dots for application in diode lasers High Power Quantum Dot Lasers at 1160 nm
is cites work of	wds:Q62600668-D65A3598-456E-479F-83B5-C81A4DEDE73F wds:Q62518854-A38F5BDB-A118-4169-B341-F0D22939EC14 wds:Q62394963-907C3349-7B44-4283-B527-B5F4C9B7ABA4 wds:Q62395027-100039B2-866E-4281-8AD4-8FEA82E7B7D1 wds:Q58072133-DDAEB1C0-7F75-4567-90E1-5726C33CDAFE wds:Q62518762-1C0560EC-9FB2-490F-A5C1-95254896CB5C wds:Q62589522-BEEE7123-C57D-4ECD-A61A-FDCCC07D0D6E wds:Q62394952-0AA0C9B6-5B33-4D1D-8DE2-9F5CC402BA58 wds:Q62394997-9B51607F-A4CD-4684-A4E2-057476D5CD8A wds:Q41824009-6CFE87DB-F872-4A92-B39D-71E3F1457FB4 wds:Q62578256-57DAED1A-A01B-4722-9D4F-5FCA1AD6B092 wds:Q62394981-6E016B69-9F8F-43D2-AB44-8A1119DAC1F2 wds:Q62394986-C7977B69-D207-47E0-9105-1F3935D5452F wds:Q62394927-4E1476B2-8ECF-4A0A-94C0-7972806F3A68 wds:Q62394980-5912A842-9A84-4121-938E-4C97527CB5E0 wds:Q62395001-C6513659-27A3-4340-B5F0-6DCE5F0151D5 wds:Q62518806-B96C2245-164C-4CDE-8019-FA25127F326F wds:Q62518813-22C61E4C-FC7D-4969-8B95-C797DE474FBB wds:Q61627470-D1240653-0618-438B-9F9C-F158DC311BB9 wds:Q78423068-3175DE27-03F6-447A-821C-C6C234AA77AD wds:Q62589511-65DBBAA1-AA12-4EDC-ABA1-3850861715FA wds:Q62037706-F545135D-4965-4670-BA23-39D64BF29AAA wds:Q33884982-FB90511A-45BF-4FCD-9B65-9AEC734BBBD2 wds:Q62439278-F5623979-205A-43DA-914A-A0A9249CE63E wds:Q62395005-E08D35C9-1C59-41C0-AA17-CFA88B4394BD wds:Q62394947-7F900FC9-8B38-4394-8826-51EB00F03B52 wds:Q62518771-6EB775CC-6DFC-4410-8866-8CCEC0FC6291 wds:Q62518838-C5DD771F-DA1D-49D1-804B-5AE1B7763FB9 wds:Q62394968-281E8D8E-46EC-4B9D-BC3B-970772412D48 wds:Q62274157-E074BEA2-E7DB-4786-8566-F9F5C7423524

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