About: Blistering of atomic layer deposition Al2O3 layers grown on silicon and its effect on metal–insulator

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About: Blistering of atomic layer deposition Al2O3 layers grown on silicon and its effect on metal–insulator–semiconductor structures Goto Sponge NotDistinct Permalink

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rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в січні 2013 (uk) 2013 ജനുവരി 1 നു പ്രസിദ്ധീകരിച്ച ശാസ്ത്ര ലേഖനം (ml) article scientifique publié en 2013 (fr)
publication date	wds:Q61825750-3CDB5F83-4A15-4F07-AEAA-EFC86E6559AD
publication date	2013-01-01 00:00:00Z (xsd:dateTime)
author name string	wds:Q61825750-1A0A85D4-EDF2-4F32-AEEC-712B4A30FB94 wds:Q61825750-D123F802-565D-4173-84A5-B0C973B914CE
author name string	Miguel Zabala Mireia Bargalló González
rdfs:label	Blistering of atomic layer deposition Al2O3 layers grown on silicon and its effect on metal–insulator–semiconductor structures (en) Blistering of atomic layer deposition Al2O3 layers grown on silicon and its effect on metal–insulator–semiconductor structures (nl)
skos:prefLabel	Blistering of atomic layer deposition Al2O3 layers grown on silicon and its effect on metal–insulator–semiconductor structures (en) Blistering of atomic layer deposition Al2O3 layers grown on silicon and its effect on metal–insulator–semiconductor structures (nl)
name	Blistering of atomic layer deposition Al2O3 layers grown on silicon and its effect on metal–insulator–semiconductor structures (en) Blistering of atomic layer deposition Al2O3 layers grown on silicon and its effect on metal–insulator–semiconductor structures (nl)
author	wds:Q61825750-1B865640-21EB-43FD-A4DD-C769FC83EB4D wds:Q61825750-219AB30D-0E08-4919-8646-2C48C044C77F wds:Q61825750-2B714834-E882-4B6A-AAFE-2D14332E20CE wds:Q61825750-623E7880-F22A-4CC9-8F15-4C4E4D0D4430
author	Marta Duch Francesca Campabadal Oihane Beldarrain Joan Marc Rafí
title	wds:Q61825750-24A45D61-51B2-4825-B4D9-2BA60ABFA86B
title	Blistering of atomic layer deposition Al2O3 layers grown on silicon and its effect on metal–insulator–semiconductor structures (en)
page(s)	wds:Q61825750-A2DF5F84-71D9-4590-862A-979B7D55F6EC
page(s)	01A128
instance of	wds:Q61825750-13FC761A-5086-4C8A-9F34-4FF35674F65E
instance of	scholarly article
main subject	wds:Q61825750-B7283A95-F73B-43B5-9958-0FF9F24CAB95
main subject	semiconductor
published in	wds:Q61825750-7CA7C42F-C5CB-453F-A620-7E904FD9F70E
published in	Journal of Vacuum Science & Technology A
issue	wds:Q61825750-0736752D-1D8B-4497-A405-DACB467E0BB2
volume	wds:Q61825750-558CE7B4-25A0-4627-B2F1-FE84514A840A
issue	1
volume	31
DOI	wds:Q61825750-46FC4824-E0FA-4DDD-928F-182ACE2C0CA4
DOI	http://dx.doi.org/10.1116/1.4768170
DOI	10.1116/1.4768170
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q61825750
is cites work of	Aluminum oxide from trimethylaluminum and water by atomic layer deposition: The temperature dependence of residual stress, elastic modulus, hardness and adhesion
is cites work of	wds:Q57390307-23CE0F33-754C-4332-BCC1-3FFCCFE1FF00

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