About: Effect of film growth rate and thickness on properties of Ge/GaAs(100) thin films

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About: Effect of film growth rate and thickness on properties of Ge/GaAs(100) thin films Goto Sponge NotDistinct Permalink

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Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в січні 2014 (uk) article scientifique publié en 2014 (fr) im Januar 2014 veröffentlichter wissenschaftlicher Artikel (de)
publication date	wds:Q61715727-C594846F-B476-4E82-B0B0-F4C20A7F54E3
publication date	2014-01-01 00:00:00Z (xsd:dateTime)
cites work	wds:Q61715727-2638DC63-36CF-4FD8-99E5-39BE2D5DB0C6 wds:Q61715727-2D75623A-BFF0-4D45-B7EC-93574610A8F9 wds:Q61715727-39CF1EDA-DDB5-4EDA-9485-A75ED2651528 wds:Q61715727-422D0720-6D93-4C3F-80A6-2123183D707A wds:Q61715727-5E32CE56-D48B-4CB3-8A3A-D3267DA289B8 wds:Q61715727-64D8542D-84DD-4718-9526-AA8EBEEA0EFA wds:Q61715727-A43EFBD6-3770-4A46-82F3-6F076B3A517F wds:Q61715727-C5169626-C568-44B5-BFB4-A4605331B74A wds:Q61715727-C85EADFF-CD65-4C8D-A888-3F9ED3801EF3 wds:Q61715727-E333F60F-B1C7-49DA-BD8B-0C8A6BA91466
cites work	The Tension of Metallic Films Deposited by Electrolysis Ultra-steep side facets in multi-faceted SiGe/Si(001) Stranski-Krastanow islands Initial stages of Ge/GaAs(100) interface formation Growth modes of Ge on GaAs(001) Self-organization of nanostructures in semiconductor heteroepitaxy Tailoring the electrical properties of Ge/GaAs by film deposition rate and preparation of fully compensated Ge films Ferromagnetic InMnSb multi-phase films study by aberration-corrected (scanning) transmission electron microscopy Heteroepitaxial growth of lattice matched films on GaAs(001) Ge/GaAs heterostructure matrix detector Effect of temperature on the mutual diffusion of Ge/GaAs and GaAs/Ge
author name string	wds:Q61715727-0AD8BF7E-D417-4066-B6F5-B8BA1CCFECE9 wds:Q61715727-1A618632-BC2A-4F1B-A894-641B912DF397 wds:Q61715727-3F20CCA0-2858-4876-8F38-3B9C50162BE6 wds:Q61715727-5DFF7E46-F669-4CF8-9CE8-45D1E05C1CC1 wds:Q61715727-85EF8561-8048-4EC0-B873-016F83248B33 wds:Q61715727-93C2ECDC-7C69-4CCC-8B18-7852F0D0B244 wds:Q61715727-E1479793-C496-48BF-AF81-B84E5F2F2A6A
author name string	P.M. Lytvyn V.K. Lazarov V.V. Mitin E.F. Venger L.A. Matveeva V.F. Mitin V.V. Kholevchuk
rdfs:label	Effect of film growth rate and thickness on properties of Ge/GaAs (nl) Effect of film growth rate and thickness on properties of Ge/GaAs(100) thin films (en)
skos:prefLabel	Effect of film growth rate and thickness on properties of Ge/GaAs (nl) Effect of film growth rate and thickness on properties of Ge/GaAs(100) thin films (en)
name	Effect of film growth rate and thickness on properties of Ge/GaAs (nl) Effect of film growth rate and thickness on properties of Ge/GaAs(100) thin films (en)
author	wds:Q61715727-3C8348A0-3815-441E-A92F-65786BB2CA94
author	Leonardo Lari
title	wds:Q61715727-6DA0CC49-84FF-4047-BACB-A1EE33A333D7
title	Effect of film growth rate and thickness on properties of Ge/GaAs(100) thin films (en)
page(s)	wds:Q61715727-897D7082-063F-492D-9D36-9042868D7EBC
page(s)	715-722
instance of	wds:Q61715727-6C0226B4-F258-450F-8527-DE4662AA72AB
instance of	scholarly article
main subject	wds:Q61715727-B1819322-132E-422E-B326-BF8264F9CF14
main subject	thin film
published in	wds:Q61715727-FBE14231-D0E0-4CF8-AC56-D9A6C6C8381E
published in	Thin Solid Films
volume	wds:Q61715727-99469D31-9DF0-46B1-9449-2C93A283EBA4
volume	550
DOI	wds:Q61715727-B589A086-B250-4D38-9395-1449A8521FCA
DOI	http://dx.doi.org/10.1016/J.TSF.2013.10.049
DOI	10.1016/J.TSF.2013.10.049
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q61715727

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