About: Band structure engineering in (Bi1−xSb x )2Te3 ternary topological insulators

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scientific article published in Nature Communications

Attributes	Values
rdf:type	Item
description	artículu científicu (ast) wetenschappelijk artikel (nl) наукова стаття, опублікована у вересні 2011 (uk) article publié dans Nature Communications (fr) im September 2011 veröffentlichter wissenschaftlicher Artikel (de) scientific article published in Nature Communications (en)
publication date	wds:Q61198308-BA584BDF-589F-4974-9E9C-A8BFB7E5F33D
publication date	2011-12-06 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q61198308-82B1BD13-BA6C-4E75-8727-99932B1177B7
language of work or name	English
exact match	wds:Q61198308-57E0CE98-CDA3-45BA-A55D-5C161CDFCEAD
exact match	https://scigraph.springernature.com/pub.10.1038/ncomms1588
cites work	wds:Q61198308-035270B0-878E-4FB7-82F3-E4CEDCF97788 wds:Q61198308-0AC19D50-3656-4252-ABF7-69DD3F060A04 wds:Q61198308-1002E988-B359-49B3-B438-D10069FBEDF2 wds:Q61198308-1B41E91B-7B7E-4FD4-8933-652267221867 wds:Q61198308-1B649FB0-0B1A-4F6A-90A2-60B53C3D16D5 wds:Q61198308-20D710C6-609D-460F-9B15-5E8EAAF96E0B wds:Q61198308-24C718F6-FD02-4BB9-B847-B377C550E473 wds:Q61198308-2829A467-A46F-48EB-A854-6610AC4EF34B wds:Q61198308-2CDC8788-C3A2-48E7-ABBA-652FA71C0EE9 wds:Q61198308-3B30D48D-6781-4F7D-983E-BD33F916B4ED wds:Q61198308-4FA9F40C-6DE9-467E-9C18-7E5AFA0E10F7 wds:Q61198308-5A99C9D2-97B1-4A05-A9DE-FA6EA6C8D05A wds:Q61198308-5B6B41DE-1DD9-4C19-BF40-E0E1B9766755 wds:Q61198308-736D842B-9032-40D2-A506-8F5941D64C84 wds:Q61198308-7544F5E3-7CBD-4AA2-8C71-077A0859D0DF wds:Q61198308-95C75DF0-01BD-4053-8C96-FC8503C5A89C wds:Q61198308-9783BC3F-8FC8-4B69-A46C-FD7FAF1DAF7F wds:Q61198308-9CE79655-0CBC-4C2F-AFF2-51C5E3847AD3 wds:Q61198308-A41ED0AD-67B7-4AA4-A947-9640A681994D wds:Q61198308-A811B796-2C6F-4FAD-9825-13F97ADE33FD wds:Q61198308-AF0CE91D-1E93-46D0-A348-0AF2601F5412 wds:Q61198308-BDFEA351-D6D7-4906-B380-1217F9F4A6C8 wds:Q61198308-BE96C1C2-4098-426F-ADD0-3ABA739D3383 wds:Q61198308-CF013CCF-1F69-4A66-B4E4-C359AAB89CB1 wds:Q61198308-D2A2D28B-587C-4EC5-84CE-889F123C456C wds:Q61198308-FDF2B865-7DFD-4110-8537-34D162AE3C4E wds:Q61198308-FE885B93-F964-4505-AC3C-5FBF890B5081
cites work	Colloquium : Topological insulators Bulk Band Gap and Surface State Conduction Observed in Voltage-Tuned Crystals of the Topological InsulatorBi2Se3 Experimental realization of a three-dimensional topological insulator, Bi2Te3. Inducing a magnetic monopole with topological surface States The birth of topological insulators Topological insulators with inversion symmetry Quantum Oscillations and Hall Anomaly of Surface States in the Topological Insulator Bi2Te3 Quantum Interference in Macroscopic Crystals of NonmetallicBi2Se3 Gate-voltage control of chemical potential and weak antilocalization in Bi₂Se₃ Aharonov-Bohm interference in topological insulator nanoribbons Topological field theory of time-reversal invariant insulators p -type Bi 2 Se 3 for topological insulator and low-temperature thermoelectric applications Observation of Time-Reversal-Protected Single-Dirac-Cone Topological-Insulator States in Bi 2 Te 3 and Sb 2 Te 3 A topological Dirac insulator in a quantum spin Hall phase A tunable topological insulator in the spin helical Dirac transport regime Exciton condensation and charge fractionalization in a topological insulator film. Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface The quantum spin Hall effect and topological insulators Observation of Dirac Holes and Electrons in a Topological Insulator Superconducting Proximity Effect and Majorana Fermions at the Surface of a Topological Insulator Quantized anomalous Hall effect in magnetic topological insulators Few-layer nanoplates of Bi 2 Se 3 and Bi 2 Te 3 with highly tunable chemical potential Surface state transport and ambipolar electric field effect in Bi₂Se₃ nanodevices Quantum Hall Effect from the Topological Surface States of Strained Bulk HgTe Spin polarization and transport of surface states in the topological insulators Bi2Se3 and Bi2Te3 from first principles Band-gap engineering: from physics and materials to new semiconductor devices Two-dimensional surface state in the quantum limit of a topological insulator
author name string	wds:Q61198308-1B008B89-4D2C-4870-B3E0-DC2F25540460 wds:Q61198308-2F81E5FC-752C-4E18-A313-6E9AE3992EF3 wds:Q61198308-36E9802F-DBE9-452F-99E1-DF6B2A9B2A61 wds:Q61198308-3C1D1D90-67EF-4ACF-8389-75E095AF6D50 wds:Q61198308-4F75D647-CBED-4208-A1E8-8EC7D2A64575 wds:Q61198308-63EE19EC-4900-416D-B71E-94724788B922 wds:Q61198308-6EAE32A5-D63A-45AF-9E69-99DFA2EA23B9 wds:Q61198308-85D76834-66CD-4F99-BBF2-A47EB4314892 wds:Q61198308-E6D14E1D-8203-417E-A9EE-697CD90E9622 wds:Q61198308-E8B77EAB-126D-4781-A75A-64255F86532B wds:Q61198308-F4BFE322-A0CA-4F43-B0CA-F06832CF5381
author name string	Xi Chen Lili Wang Ke He Jinsong Zhang Kang Li Jing Wen Minhao Liu Xucun Ma Cui-Zu Chang Yayu Wang Zuocheng Zhang
rdfs:label	Band structure engineering in (nl) Band structure engineering in (Bi1−xSb x )2Te3 ternary topological insulators (en)
skos:prefLabel	Band structure engineering in (nl) Band structure engineering in (Bi1−xSb x )2Te3 ternary topological insulators (en)
name	Band structure engineering in (nl) Band structure engineering in (Bi1−xSb x )2Te3 ternary topological insulators (en)
author	wds:Q61198308-04488625-F24C-487D-9936-58CF3328374F wds:Q61198308-4685F6B7-B77E-4F2B-BC71-9738C94AA5C3
author	Xue Qikun Xiao Feng
title	wds:Q61198308-FAE1FC1D-89A8-47D0-9A35-E90AB878729F

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