About: The role of vacancies and local distortions in the design of new phase-change materials

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scientific article published on 17 December 2006

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) article scientifique publié en 2006 (fr) наукова стаття, опублікована в грудні 2006 (uk) im Dezember 2006 veröffentlichter wissenschaftlicher Artikel (de) scientific article published on 17 December 2006 (en) artículu científicu espublizáu n'avientu de 2006 (ast)
publication date	wds:Q60395741-C49A753C-40B4-4CAF-BD21-17CCC59076F3
publication date	2006-12-17 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q60395741-CAD519DC-A47D-4C0F-8B0E-AFED4A815934
language of work or name	English
exact match	wds:Q60395741-FE7C9745-8FB4-4CFE-AF26-CC35383DD343
exact match	https://scigraph.springernature.com/pub.10.1038/nmat1807
cites work	wds:Q60395741-0CC27C88-4E32-483D-89C1-93F25EC1ACD5 wds:Q60395741-1A6A65DB-C5E3-4B78-93C3-5161AAE09D0B wds:Q60395741-2D4A175D-94AE-413A-A893-15AC6BDF5812 wds:Q60395741-3A5DF022-970A-4733-B96D-28C52A6152E9 wds:Q60395741-5FB17C6A-7305-4B3C-8058-BC0B2F0D7D2E wds:Q60395741-690C536A-A52E-43B3-B3C7-B5744CE433FD wds:Q60395741-69E084F3-67EF-49C9-AB56-DB4B2FBEAE3C wds:Q60395741-83A4803C-6E5F-49A3-B321-B873A4E45C29 wds:Q60395741-844B5906-10C7-4CD4-8C50-99A49E295339 wds:Q60395741-8D9C042D-ADC3-4C26-8997-96A854362BB8 wds:Q60395741-9042206C-EBAB-4C27-BCD5-4432FEBE2556 wds:Q60395741-ABD8C86D-9C8D-4FE9-9B79-71C555C87230 wds:Q60395741-AC1A328D-233F-48C8-8F17-C7B8C7C64AB4 wds:Q60395741-D4E3B642-365D-466F-8809-EC1ED8291344 wds:Q60395741-D82B1A6D-7754-4E31-9E5D-A0C395B76243 wds:Q60395741-E0F87118-3B82-4D53-81C7-BAEDE395AD01 wds:Q60395741-E93642F6-5CFF-4ECE-A82D-3CD7CD579834
cites work	Generalized norm-conserving pseudopotentials Generalized Gradient Approximation Made Simple Iterative minimization techniques for ab initio total-energy calculations: molecular dynamics and conjugate gradients Linear methods in band theory Low-cost and nanoscale non-volatile memory concept for future silicon chips Solution of the Schrödinger Equation in Periodic Lattices with an Application to Metallic Lithium On the calculation of the energy of a Bloch wave in a metal First-principles computation of material properties: the ABINIT software project Understanding the phase-change mechanism of rewritable optical media. Structures of stable and metastable Ge2Sb2Te5, an intermetallic compound in GeTe-Sb2Te3 pseudobinary systems Reversible Electrical Switching Phenomena in Disordered Structures Large displacement of germanium atoms in crystalline Ge2Sb2Te5 Phase-change materials: towards a universal memory? Towards a potential-based conjugate gradient algorithm for order-N self-consistent total energy calculations. Single structure widely distributed in a GeTe-Sb2Te3 pseudobinary system: a rock salt structure is retained by intrinsically containing an enormous number of vacancies within its crystal Sampling the diffusion paths of a neutral vacancy in silicon with quantum mechanical calculations Fast Radix 2, 3, 4, and 5 Kernels for Fast Fourier Transformations on Computers with Overlapping Multiply--Add Instructions
author name string	wds:Q60395741-06B6F8D6-AB41-4B30-9707-A53AE5456B49 wds:Q60395741-57C4A0C9-7584-4544-9621-9584B0DE5C30 wds:Q60395741-C24370BB-0F6A-4E14-AF7D-62AB840B3E6E wds:Q60395741-DC41CAD0-A467-43DC-87AE-F731B89A6484 wds:Q60395741-FBB99A21-01EE-4709-BC32-B3923358D83D
author name string	Richard Dronskowski Michael Gillessen Daniel Wamwangi Wojciech Wełnic Daniel Lüsebrink
rdfs:label	The role of vacancies and local distortions in the design of new phase-change materials (en) The role of vacancies and local distortions in the design of new phase-change materials (nl)
skos:prefLabel	The role of vacancies and local distortions in the design of new phase-change materials (en) The role of vacancies and local distortions in the design of new phase-change materials (nl)
name	The role of vacancies and local distortions in the design of new phase-change materials (en) The role of vacancies and local distortions in the design of new phase-change materials (nl)
author	wds:Q60395741-6E7F0827-CD59-4EE4-A022-0A8BBF05CA93
author	Matthias Wuttig
title	wds:Q60395741-C416E294-C0EE-4995-A103-F4C6818CCE72
title	The role of vacancies and local distortions in the design of new phase-change materials (en)
page(s)	wds:Q60395741-B12DF076-20A0-4850-9A45-2FCD7A7F4545
page(s)	122-128
instance of	wds:Q60395741-1F96C251-35D4-429F-97B3-270E9ABFF9A7
instance of	scholarly article
main subject	wds:Q60395741-0A723781-4B7C-4F48-9CC6-12573F8C4E33
main subject	condensed matter physics
PubMed ID	wds:Q60395741-6B16B67E-5EA8-49A8-B13B-0B4D4F49BC26
PubMed ID	http://rdf.ncbi.nlm.nih.gov/pubchem/reference/17173032
PubMed ID	17173032
published in	wds:Q60395741-CE7B9AB9-D377-4701-BF7A-571BC1AB2ABC
published in	Nature Materials
issue	wds:Q60395741-46CAE1D9-F729-46B8-BD8D-FA241FD00626
volume	wds:Q60395741-FC642290-6FBD-421D-ADE5-41084D973D76
issue	2
volume	6
DOI	wds:Q60395741-64AC2522-FA13-4B46-910F-5A910E0A3898
DOI	http://dx.doi.org/10.1038/NMAT1807
DOI	10.1038/NMAT1807
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q60395741
is cites work of	Microscopic origin of the fast crystallization ability of Ge-Sb-Te phase-change memory materials A map for phase-change materials Disorder-induced localization in crystalline phase-change materials. Resonant bonding in crystalline phase-change materials. Atomic Layering, Intermixing and Switching Mechanism in Ge-Sb-Te based Chalcogenide Superlattices LOBSTER: A tool to extract chemical bonding from plane-wave based DFT Phase-change materials for rewriteable data storage Disorder Control in Crystalline GeSb2Te4 Using High Pressure Role of vacancies in metal-insulator transitions of crystalline phase-change materials Bond orientational order in liquids: Towards a unified description of water-like anomalies, liquid-liquid transition, glass transition, and crystallization: Bond orientational order in liquids. Aging mechanisms in amorphous phase-change materials Engineering the phase front of light with phase-change material based planar lenses Pressure-induced reversible amorphization and an amorphous-amorphous transition in Ge₂Sb₂Te₅ phase-change memory material Pressure tunes electrical resistivity by four orders of magnitude in amorphous Ge2Sb2Te5 phase-change memory alloy

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