About: Silicon nitride at high deposition rate by Hot Wire Chemical Vapor Deposition as passivating and antireflection layer on multicrystalline silicon solar cells

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About: Silicon nitride at high deposition rate by Hot Wire Chemical Vapor Deposition as passivating and antireflection layer on multicrystalline silicon solar cells Goto Sponge NotDistinct Permalink

An Entity of Type : wikibase:Item, within Data Space : wikidata.demo.openlinksw.com associated with source document(s)

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) article scientifique publié en 2006 (fr) наукова стаття, опублікована у квітні 2006 (uk) im April 2006 veröffentlichter wissenschaftlicher Artikel (de)
publication date	wds:Q59709491-C585DD16-558E-4FD4-8713-E04C98AAFE72
publication date	2006-04-01 00:00:00Z (xsd:dateTime)
cites work	wds:Q59709491-2DF4C3B4-51F6-4748-AB99-9C684E91CB65 wds:Q59709491-73C7F739-E01A-44D3-8F0D-EC59345E7B78
cites work	Device-quality polycrystalline and amorphous silicon films by hot-wire chemical vapour deposition Growth process and properties of silicon nitride deposited by hot-wire chemical vapor deposition
author name string	wds:Q59709491-04975E6B-4BEE-436B-91B1-961D00C9FFA2 wds:Q59709491-08D9CF13-BED9-4321-AA13-F34696BE4A25 wds:Q59709491-0B38DFAD-FAB5-46DC-9349-D961F9461BC6 wds:Q59709491-1CCB22AD-8ADB-4864-9569-9FB82FA2689C wds:Q59709491-344C5EC2-33D1-48CB-851D-0A94A4D8A72B wds:Q59709491-3774E6AE-B697-4247-85D1-FB98A380720C wds:Q59709491-5C112188-4F7A-4E4B-875F-0F3A9273531A wds:Q59709491-79AA6206-55F3-4B8F-B39C-D5E8ACBF5A62 wds:Q59709491-9E3C2C49-EA3D-4019-AF45-971C2DF43340 wds:Q59709491-9F7D83EC-DD5D-4899-A4B6-206EEE6BF91E wds:Q59709491-B4104055-EEF9-479E-80F7-C2A95B36FF94 wds:Q59709491-BB6756C0-5541-4DE9-9052-414BB95FBF73
author name string	C.H.M. van der Werf H.D. Goldbach J. Löffler J.K. Rath R.E.I. Schropp B. Stannowski A. Weeber W.J. Soppe A.M.C. Kylner H. Rieffe W.M. ArnoldBik A. Scarfó
rdfs:label	Silicon nitride at high deposition rate by Hot Wire Chemical Vapor Deposition as passivating and antireflection layer on multicrystalline silicon solar cells (en) Silicon nitride at high deposition rate by Hot Wire Chemical Vapor Deposition as passivating and antireflection layer on multicrystalline silicon solar cells (nl)
skos:prefLabel	Silicon nitride at high deposition rate by Hot Wire Chemical Vapor Deposition as passivating and antireflection layer on multicrystalline silicon solar cells (en) Silicon nitride at high deposition rate by Hot Wire Chemical Vapor Deposition as passivating and antireflection layer on multicrystalline silicon solar cells (nl)
name	Silicon nitride at high deposition rate by Hot Wire Chemical Vapor Deposition as passivating and antireflection layer on multicrystalline silicon solar cells (en) Silicon nitride at high deposition rate by Hot Wire Chemical Vapor Deposition as passivating and antireflection layer on multicrystalline silicon solar cells (nl)
title	wds:Q59709491-78C347E9-0DC7-4B8B-9B88-6E9EF1F03336
title	Silicon nitride at high deposition rate by Hot Wire Chemical Vapor Deposition as passivating and antireflection layer on multicrystalline silicon solar cells (en)
page(s)	wds:Q59709491-97760E18-D57C-41BB-B310-EF347EA39A31
page(s)	51-54
instance of	wds:Q59709491-83163994-9BCE-404D-A697-7DAAB06BAA2D wds:Q59709491-B72264B9-5847-432B-BC1F-D468A1916226
instance of	scholarly article retracted paper
main subject	wds:Q59709491-D83E9DD7-2BF3-4025-94D9-029D11415356
main subject	photovoltaics
published in	wds:Q59709491-E318F5AE-8AB0-456B-973A-B9047C7D27D1
published in	Thin Solid Films
issue	wds:Q59709491-564C18DC-8B4C-4F81-A20F-5DF58C2D1D7B
volume	wds:Q59709491-8A01815D-3690-4622-9753-94A44C2A7BFC
issue	1-2
volume	501
number of pages	wds:Q59709491-8139E864-AB87-4F30-B8C0-FF3B025ED00D
number of pages	4 (xsd:decimal)
DOI	wds:Q59709491-EE89D83F-3C22-4A6F-BD4C-AC70D4E80AC7
DOI	http://dx.doi.org/10.1016/J.TSF.2005.07.107
DOI	10.1016/J.TSF.2005.07.107
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q59709491
is cites work of	Hot Wire CVD for thin film triple junction cells and for ultrafast deposition of the SiN passivation layer on polycrystalline Si solar cells High-density silicon nitride deposited at low substrate temperature with high deposition rate using hot wire chemical vapour deposition Influence of Sound Vibration on Diamond-Like Carbon Deposition Rate Multi-crystalline Si solar cells with very fast deposited (180 nm/min) passivating hot-wire CVD silicon nitride as antireflection coating Unambiguous determination of Fourier-transform infrared spectroscopy proportionality factors: The case of silicon nitride The effect of composition on the bond structure and refractive index of silicon nitride deposited by HWCVD and PECVD Influences of InGaP Conical Frustum Nanostructures on the Characteristics of GaAs Solar Cells
is cites work of	wds:Q59709420-A38C80C6-1F27-4A2C-B073-3E9D16E6470A wds:Q59709447-D3ECF5F7-348E-4280-8EAD-9E1255056486 wds:Q58692063-81908958-C546-455B-9874-DAB154A9CA5A wds:Q59709452-B60B2D26-5397-4F4C-B885-4BDB3D96C706 wds:Q59709406-A944D713-D787-4C6D-8A7E-10108E8AAE30 wds:Q59017781-368DD634-1751-4433-A18C-AF10AEECC59E wds:Q59709502-2D2E8F0D-E3CC-4E6A-99BA-6B6900FF3362

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