About: Capacitance–voltage studies of the electrostatic profile of single barrier GaAs/AlAs/GaAs structures containing self assembled quantum dots

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About: Capacitance–voltage studies of the electrostatic profile of single barrier GaAs/AlAs/GaAs structures containing self assembled quantum dots Goto Sponge NotDistinct Permalink

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Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в липні 1998 (uk) article scientifique publié en 1998 (fr) im Juli 1998 veröffentlichter wissenschaftlicher Artikel (de)
publication date	wds:Q59445890-F09243AF-2009-48E5-8766-48BFAC40044C
publication date	1998-07-01 00:00:00Z (xsd:dateTime)
cites work	wds:Q59445890-386E328F-63BB-4C55-AC10-D479DAD5A6AC wds:Q59445890-7DCB5A71-6045-4A0A-8410-23BF43ABD689 wds:Q59445890-AC344A8A-D174-4F5E-8AB4-107644E23C68 wds:Q59445890-AC7CA954-CD93-492B-AB4F-9FD65807B205 wds:Q59445890-EDC9ABA7-9083-4A5C-9EB2-DE690A17CC68 wds:Q59445890-F8153D75-7059-4099-AECF-C9994E6D7984 wds:Q59445890-FCC4A436-8805-438A-95FE-941DF9ADB774
cites work	Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAs Resonant magnetotunneling through individual self-assembled InAs quantum dots Resonant magnetotunneling through individual self-assembled InAs quantum dots Multiphonon‐relaxation processes in self‐organized InAs/GaAs quantum dots Ultranarrow Luminescence Lines from Single Quantum Dots Visible photoluminescence from N-dot ensembles and the linewidth of ultrasmall AlyIn1-yAs/AlxGa1-xAs quantum dots Spectroscopy of quantum levels in charge-tunable InGaAs quantum dots
author name string	wds:Q59445890-2360B247-0054-42DC-9374-FD37730D79D2 wds:Q59445890-37633BD5-9F50-4492-BB6D-15AD5F786E98 wds:Q59445890-526554A8-BCB0-4A21-AFB0-DE314312766A wds:Q59445890-951639A3-1D5E-47CB-A136-B19ED4AFE5D9
author name string	P.M. Martin P.C. Main A.E. Belyaev F.W. Sheard
rdfs:label	Capacitance–voltage studies of the electrostatic profile of single barrier GaAs/AlAs/GaAs structures containing self assembled quantum dots (en) Capacitance–voltage studies of the electrostatic profile of single barrier GaAs/AlAs/GaAs structures containing self assembled quantum dots (nl)
skos:prefLabel	Capacitance–voltage studies of the electrostatic profile of single barrier GaAs/AlAs/GaAs structures containing self assembled quantum dots (en) Capacitance–voltage studies of the electrostatic profile of single barrier GaAs/AlAs/GaAs structures containing self assembled quantum dots (nl)
name	Capacitance–voltage studies of the electrostatic profile of single barrier GaAs/AlAs/GaAs structures containing self assembled quantum dots (en) Capacitance–voltage studies of the electrostatic profile of single barrier GaAs/AlAs/GaAs structures containing self assembled quantum dots (nl)
author	wds:Q59445890-86FB9087-D1F6-4D04-B2CC-3F53C174C39B wds:Q59445890-E9937BF5-4487-4F37-B115-C07433F2A625 wds:Q59445890-FB0DE226-37BB-46E5-9032-E0BFFCF5E8FE
author	Laurence Eaves Mohamed Henini Thomas Ihn
title	wds:Q59445890-B08BA57A-A031-4C02-B9D5-0DB019409807
title	Capacitance–voltage studies of the electrostatic profile of single barrier GaAs/AlAs/GaAs structures containing self assembled quantum dots (en)
page(s)	wds:Q59445890-AA84017E-0352-4CC5-801D-19C329F6D28D
page(s)	1293-1295
instance of	wds:Q59445890-BA825EC7-0EBB-49FD-AFB3-C34C87CBDD19
instance of	scholarly article
main subject	wds:Q59445890-6FB3FB1C-FAD3-4BDB-A1B9-58632512FA8C
main subject	quantum dot
published in	wds:Q59445890-F19BADE0-F403-4B7C-88C1-9C0EC8F8721C
published in	Solid-State Electronics
issue	wds:Q59445890-1FD08DA4-6112-4CDE-9C3B-B5121848C3FC
volume	wds:Q59445890-EF20ABC2-24F2-49A3-A323-B5D4FE523840
issue	7-8
volume	42
DOI	wds:Q59445890-0996B22A-E981-497A-8843-B2E04C021BBE
DOI	http://dx.doi.org/10.1016/S0038-1101(98)00019-7
DOI	10.1016/S0038-1101(98)00019-7
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q59445890

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