About: Continuous-wave and pulsed EPR study of the negatively charged silicon vacancy withS=32andC3vsymmetry inn-type4H−SiC

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About: Continuous-wave and pulsed EPR study of the negatively charged silicon vacancy withS=32andC3vsymmetry inn-type4H−SiC Goto Sponge NotDistinct Permalink

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scholarly article in Physical Review B, vol. 66 no. 23, December 2002

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в грудні 2002 (uk) im Dezember 2002 veröffentlichter wissenschaftlicher Artikel (de) article scientifique publié en décembre 2002 (fr) scholarly article in Physical Review B, vol. 66 no. 23, December 2002 (en)
publication date	wds:Q59435937-29BACDDC-1388-40C6-B1EB-DE127E40A1B8
publication date	2002-12-05 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q59435937-82D6BBE9-CB31-404A-B0FD-FEC6A79C78BF
language of work or name	English
cites work	wds:Q59435937-13285EF1-15C7-4E32-8B5F-B5159475198F wds:Q59435937-15533B47-F2F5-491C-809F-65B684B5D467 wds:Q59435937-4E6FF39C-D0B2-4DDA-ADE9-EA502DBC747F wds:Q59435937-C39A9259-3C7E-4807-9B55-B8AFC348F55E wds:Q59435937-DB366C49-635A-4F82-AE5E-3FBDEEA1A211 wds:Q59435937-F5367879-FB04-4DDB-85A4-62880881910D wds:Q59435937-FD6D8242-7129-489E-9EAD-BB29BF557682
cites work	The 1993 atomic mass evaluation Fourier-transform and continuous-wave EPR studies of nickel in synthetic diamond: Site and spin multiplicity Silicon vacancy related defect in 4H and 6H SiC Chain character of vacancy-type defects in silicon The structure and electronic state of photoexcited fullerene linked with a nitroxide radical based on an analysis of a two-dimensional electron paramagnetic resonance nutation spectrum EPR identification of the negatively charged vacancy in diamond EPR Study of Single Silicon Vacancy-Related Defects in 4H- and 6H-SiC
author name string	wds:Q59435937-40BA2E83-40F9-4844-932B-626CD8AE617F wds:Q59435937-4D1F143B-19D7-4906-B8DF-23A24AAF24B5 wds:Q59435937-659240CB-58E7-479E-B5DD-5A4F0CE9AD2F wds:Q59435937-ACD93DC3-EF3E-4981-8350-2BD0A2F7BBA2 wds:Q59435937-DB251D4E-D2F4-4F86-9B0B-412B90B53E99
author name string	H. Itoh S. Yamasaki H. Takizawa J. Isoya N. Morishita
rdfs:label	Continuous-wave and pulsed EPR study of the negatively charged silicon vacancy withS=32andC3vsymmetry inn-type4H−SiC (en) Continuous-wave and pulsed EPR study of the negatively charged silicon vacancy withS=32andC3vsymmetry inn-type4H−SiC (nl)
skos:prefLabel	Continuous-wave and pulsed EPR study of the negatively charged silicon vacancy withS=32andC3vsymmetry inn-type4H−SiC (en) Continuous-wave and pulsed EPR study of the negatively charged silicon vacancy withS=32andC3vsymmetry inn-type4H−SiC (nl)
name	Continuous-wave and pulsed EPR study of the negatively charged silicon vacancy withS=32andC3vsymmetry inn-type4H−SiC (en) Continuous-wave and pulsed EPR study of the negatively charged silicon vacancy withS=32andC3vsymmetry inn-type4H−SiC (nl)
author	wds:Q59435937-39C904B6-DDFE-46A1-8429-E2BCD1178F40 wds:Q59435937-F765BD56-BBCB-4525-A621-7286F53B1AEE
author	Takeshi Ohshima Norikazu Mizuochi
title	wds:Q59435937-1CD72519-E32F-4B23-A7DB-28F9355BA8DE
title	Continuous-wave and pulsed EPR study of the negatively charged silicon vacancy withS=32andC3vsymmetry inn-type4H−SiC (en)
instance of	wds:Q59435937-317A2703-4E00-447E-8C62-78FE08BD574F
instance of	scholarly article
published in	wds:Q59435937-516531D4-B1FE-4005-81E7-D735F0585067
published in	Physical Review B
issue	wds:Q59435937-94FD637C-8A04-490B-839F-6E1ECDF4C2EA
volume	wds:Q59435937-A654155C-4ABA-4032-B811-D119318AF0A3
issue	23
volume	66
DOI	wds:Q59435937-9B40B4D3-507B-4C87-AADC-E5095FD45447
DOI	http://dx.doi.org/10.1103/PHYSREVB.66.235202
DOI	10.1103/PHYSREVB.66.235202
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q59435937
is cites work of	Coherent control of single spins in silicon carbide at room temperature Room temperature coherent control of defect spin qubits in silicon carbide Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide. Room-temperature quantum microwave emitters based on spin defects in silicon carbide Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide. Microcrystalline silicon carbide alloys prepared with HWCVD as highly transparent and conductive window layers for thin film solar cells Material platforms for spin-based photonic quantum technologies High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide Optical patterning of trapped charge in nitrogen-doped diamond EPR studies of the isolated negatively charged silicon vacancies inn-type4H- and6H-SiC: Identification ofC3vsymmetry and silicon sites Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions Silicon vacancy relatedTV2acenter in 4H-SiC Excitation and coherent control of spin qudit modes in silicon carbide at room temperature
is cites work of	wds:Q64086237-1763AEA0-CA4D-439F-8914-A69609F204DC wds:Q62049496-AF17A26A-8317-4EC3-96B6-CFB70786E5C6 wds:Q36116385-9768FEBC-86F1-4D7D-9F7C-79211652059A wds:Q57653969-7AA1FA00-B038-4A46-89E4-F3BAB4479D59 wds:Q29307394-EBD6DBD6-DCF8-4C24-82C4-4052BD9321BB wds:Q42720723-A9CFA181-8EA0-400C-ABC2-421C57221E14 wds:Q59509899-2DEC40B7-1F58-4346-8CAF-FA613FAD59B1 wds:Q91717476-D6F304BC-CED0-4847-BF80-8402AE6C4F5D wds:Q39690458-8CC70301-7C41-4C79-B93C-CA801F60F051 wds:Q62570261-A27C9BA5-429F-45DF-8D28-35390A0D9FC4 wds:Q64056432-5A1BAEB8-D3E7-4561-8748-CCC55C8E1682 wds:Q53188673-51BA3263-A475-4FA5-9225-576AD1D40E19 wds:Q59435935-75CDDC18-DDE2-44EA-B7F1-B9E6261524F9

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