About: Parallel excitation of hole and electron intersubband resonances in space-charge layers on silicon

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About: Parallel excitation of hole and electron intersubband resonances in space-charge layers on silicon Goto Sponge NotDistinct Permalink

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scholarly article in Physical Review B, vol. 30 no. 8, October 1984

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в жовтні 1984 (uk) article scientifique publié en 1984 (fr) im Oktober 1984 veröffentlichter wissenschaftlicher Artikel (de) scholarly article in Physical Review B, vol. 30 no. 8, October 1984 (en)
publication date	wds:Q59429434-88DC9912-09FA-4EBC-94DC-7852C412C5E2
publication date	1984-10-15 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q59429434-3DE73D45-03C0-410F-B8CB-B924BAA0ABDA
language of work or name	English
cites work	wds:Q59429434-E6A552D9-5252-4C2B-B9D1-7FE72E00EBE8
cites work	Electronic properties of two-dimensional systems
author name string	wds:Q59429434-5965BF4A-DF4E-43C3-817F-254C238D058B wds:Q59429434-60CED920-8836-4848-823B-26BF778725E1 wds:Q59429434-DD611FC0-463A-4391-A18D-206FDE157276 wds:Q59429434-FCC40A04-8D7D-4454-862A-B90B2D39294C
author name string	A. D. Wieck D. Heitmann E. Batke J. P. Kotthaus
rdfs:label	Parallel excitation of hole and electron intersubband resonances in space-charge layers on silicon (en) Parallel excitation of hole and electron intersubband resonances in space-charge layers on silicon (nl)
skos:prefLabel	Parallel excitation of hole and electron intersubband resonances in space-charge layers on silicon (en) Parallel excitation of hole and electron intersubband resonances in space-charge layers on silicon (nl)
name	Parallel excitation of hole and electron intersubband resonances in space-charge layers on silicon (en) Parallel excitation of hole and electron intersubband resonances in space-charge layers on silicon (nl)
title	wds:Q59429434-AC08751E-55B1-4C11-8C24-7DAE1C53CC9A
title	Parallel excitation of hole and electron intersubband resonances in space-charge layers on silicon (en)
page(s)	wds:Q59429434-AD23C192-C01B-4F46-B9AB-28D94F231D26
page(s)	4653-4663
instance of	wds:Q59429434-14C18619-810B-45AE-B79C-1B8413CDD69F
instance of	scholarly article
published in	wds:Q59429434-FA04C29F-16A8-4D15-8CCD-4FBCA608C67A
published in	Physical Review B
issue	wds:Q59429434-63947AA8-3099-4B68-87D9-8803944CBC12
volume	wds:Q59429434-281E845B-BE5B-4B88-993D-9DCF8AC043A3
issue	8
volume	30
DOI	wds:Q59429434-4D8E28CF-615F-40CB-8F6E-51CE08097122
DOI	http://dx.doi.org/10.1103/PHYSREVB.30.4653
DOI	10.1103/PHYSREVB.30.4653
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q59429434
is cites work of	Intersubband energies in GaAs-Ga1−xAlxAs heterojunctions Cyclotron resonance in the two-dimensional hole gas in (Ga,Al)As/GaAs heterostructures Plasmon and magnetoplasmon excitation in two-dimensional electron space-charge layers on GaAs. Resonant interaction of optical phonons with two-dimensional electron and hole space-charge layers on silicon Grating-coupler-induced intersubband resonances in electron inversion layers of silicon Quenching of collective phenomena in combined intersubband-cyclotron resonances in GaAs
is cites work of	wds:Q77970483-7F54699D-3FB8-4025-A74D-D30808352243 wds:Q78210583-5FA1F8C2-4C53-49FF-A8A0-3448E8002DAC wds:Q53716105-8022D1FF-33F5-4D8E-A879-0E52850E2938 wds:Q59429424-26962037-7A2A-4302-8C41-A78EA03927E7 wds:Q59429421-D956AE4E-9BC1-4057-9A96-4F7E221329AB wds:Q77972908-CDBC51BA-71BF-4311-882B-4741C7EDFEF9

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