About: Quantitative determination of the dopant distribution in Si ultrashallow junctions by tilted sample annular dark field scanning transmission electron microscopy

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About: Quantitative determination of the dopant distribution in Si ultrashallow junctions by tilted sample annular dark field scanning transmission electron microscopy Goto Sponge NotDistinct Permalink

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rdf:type	Item
description	article (en) wetenschappelijk artikel (nl) article scientifique publié en 2008 (fr) наукова стаття, опублікована в червні 2008 (uk) im Juni 2008 veröffentlichter wissenschaftlicher Artikel (de)
publication date	wds:Q58238372-7A04DD02-869D-4B8E-B3DC-62308A4F01AD
publication date	2008-06-30 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q58238372-9CD8EB9F-49F9-41F6-9B42-BC59D54EFA8C
language of work or name	English
cites work	wds:Q58238372-89A92DF5-8CE8-48EA-9D85-9B15A4735F29
cites work	Images of dopant profiles in low-energy scanning transmission electron microscopy
author name string	wds:Q58238372-35B11401-A1A9-489D-85E0-54DD553E2A84 wds:Q58238372-4CCAA6B6-9B3F-486B-9CED-5002AB03329E wds:Q58238372-641117EB-31E6-4E83-9753-0FE9371406E1 wds:Q58238372-E1B3F8AE-E9BB-4931-B1AD-D27203D8A303
author name string	J. A. van den Berg M. Bersani P. G. Merli S. Solmi
rdfs:label	Quantitative determination of the dopant distribution in Si ultrashallow junctions by tilted sample annular dark field scanning transmission electron microscopy (en) Quantitative determination of the dopant distribution in Si ultrashallow junctions by tilted sample annular dark field scanning transmission electron microscopy (nl)
skos:prefLabel	Quantitative determination of the dopant distribution in Si ultrashallow junctions by tilted sample annular dark field scanning transmission electron microscopy (en) Quantitative determination of the dopant distribution in Si ultrashallow junctions by tilted sample annular dark field scanning transmission electron microscopy (nl)
name	Quantitative determination of the dopant distribution in Si ultrashallow junctions by tilted sample annular dark field scanning transmission electron microscopy (en) Quantitative determination of the dopant distribution in Si ultrashallow junctions by tilted sample annular dark field scanning transmission electron microscopy (nl)
author	wds:Q58238372-62C3E34F-BDE2-4050-A0E6-6C598472C507 wds:Q58238372-D2EFE5B0-081B-4A7F-8576-60F3A0787727 wds:Q58238372-E21C3FA9-8AB0-4D68-8081-B0791AD030A7
author	Andrea Parisini Vittorio Morandi Damiano Giubertoni
title	wds:Q58238372-6F916B88-E9C7-484B-AD65-ADB913044C18
title	Quantitative determination of the dopant distribution in Si ultrashallow junctions by tilted sample annular dark field scanning transmission electron microscopy (en)
page(s)	wds:Q58238372-221E213C-A2AA-45B6-97E3-F4F71B280358
page(s)	261907
instance of	wds:Q58238372-2DC7ECE4-15A4-4E00-8019-88C7C6B63145
instance of	scholarly article
published in	wds:Q58238372-2A563040-50C7-4F92-8C67-0B509E03C5D0
published in	Applied Physics Letters
issue	wds:Q58238372-0B3AB345-7A9E-4C89-B5AA-61DF132FC914
volume	wds:Q58238372-1FCACB96-0517-4FDD-AA6E-A89E283C64BB
issue	26
volume	92
DOI	wds:Q58238372-9D006560-2800-4E99-9C06-E4EFBA48545E
DOI	http://dx.doi.org/10.1063/1.2951896
DOI	10.1063/1.2951896
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q58238372

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