About: Nucleation and diffusion during growth of ternary Co1−xNixSi2 thin films studied by complementary techniques in real time

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article published in 2008

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в листопаді 2008 (uk) im November 2008 veröffentlichter wissenschaftlicher Artikel (de) article published in 2008 (en)
publication date	wds:Q57641390-A120AAAF-6BCB-4F38-A212-46AEC4AC1178
publication date	2008-11-01 00:00:00Z (xsd:dateTime)
cites work	wds:Q57641390-1727D16D-87EA-4D6E-9F5A-B032C44B6314 wds:Q57641390-29CCD86A-D7C6-4A25-9689-488257FB4FC0 wds:Q57641390-450D8E95-F2C0-42A0-A887-D03DF51A69C0 wds:Q57641390-6237952E-E890-48BF-86C7-421F5A410522 wds:Q57641390-73477BF4-E907-4A9D-A0E0-B6360B854F56 wds:Q57641390-8D97B410-F278-4426-95D7-F05D8C27E7A7 wds:Q57641390-DA295AB0-89FB-439C-A245-ECCA99F75572
cites work	Towards implementation of a nickel silicide process for CMOS technologies Formation and morphological stability of NiSi in the presence of W, Ti, and Ta alloying elements Effects of additive elements on the phase formation and morphological stability of nickel monosilicide films Influence of Pt addition on the texture of NiSi on Si(001) Thermal expansion of the isostructural PtSi and NiSi: Negative expansion coefficient in NiSi and stress effects in thin films High-temperature degradation of NiSi films: Agglomeration versus NiSi2 nucleation The role of lattice mismatch and kinetics in texture development: Co1−xNixSi2 thin films on Si(100)
author name string	wds:Q57641390-040558F1-F378-4FAD-ADDF-9A215AB32A20 wds:Q57641390-21CDD9A4-72EB-4109-9C7D-3E0BEBFED8AA wds:Q57641390-38305D11-EC99-415F-9DB8-E50AEBFB1B0A wds:Q57641390-3E02DFC9-0CD1-4693-85D1-D73A78E493DD wds:Q57641390-90147583-1E83-4027-A966-227033716895 wds:Q57641390-A5DA73CF-97C7-4D31-A5EE-9640989EF827 wds:Q57641390-C209EE9E-BB39-4977-8515-6E9AF65FBA47 wds:Q57641390-C40B1F1E-C9D3-414A-AAB7-229D4FE2AF0D wds:Q57641390-E4EE20A5-F8EE-458B-8235-1EC2C59088E1
author name string	D. Smeets C. Lavoie A. Vantomme C. Detavernier J. Demeulemeester K. De Keyser D. Deduytsche C. C. Theron C. M. Comrie
rdfs:label	Nucleation and diffusion during growth of ternary Co1−xNixSi2 thin films studied by complementary techniques in real time (en) Nucleation and diffusion during growth of ternary Co1−xNixSi2 thin films studied by complementary techniques in real time (nl)
skos:prefLabel	Nucleation and diffusion during growth of ternary Co1−xNixSi2 thin films studied by complementary techniques in real time (en) Nucleation and diffusion during growth of ternary Co1−xNixSi2 thin films studied by complementary techniques in real time (nl)
name	Nucleation and diffusion during growth of ternary Co1−xNixSi2 thin films studied by complementary techniques in real time (en) Nucleation and diffusion during growth of ternary Co1−xNixSi2 thin films studied by complementary techniques in real time (nl)
title	wds:Q57641390-D9A8E8DB-45EC-4CFB-BA24-D09A23F066B9
title	Nucleation and diffusion during growth of ternary Co1−xNixSi2 thin films studied by complementary techniques in real time (en)
page(s)	wds:Q57641390-9637B810-07FB-4002-B77B-128BC57C4443
page(s)	093533
instance of	wds:Q57641390-2F228AA2-A6D5-4BF6-9B38-3913A377E254
instance of	scholarly article
main subject	wds:Q57641390-9DEB072A-847F-4858-800E-1D91B9B23F6C
main subject	thin film
published in	wds:Q57641390-22C704A8-3AE6-4AA6-9A22-45938BCC64ED
published in	Journal of Applied Physics
issue	wds:Q57641390-322A0AD7-C3B2-4831-A55B-218D5ECCD1FD
volume	wds:Q57641390-E29DB7C0-FC6D-4D5B-AAAE-232127ADA0E0
issue	9
volume	104
DOI	wds:Q57641390-72BF9B40-3D55-4EF3-A286-AB9863CB4A98
DOI	http://dx.doi.org/10.1063/1.3013449
DOI	10.1063/1.3013449
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q57641390
is cites work of	Simultaneous real-time x-ray diffraction spectroscopy, Rutherford backscattering spectrometry, and sheet resistance measurements to study thin film growth kinetics by Kissinger plots
is cites work of	wds:Q57641397-61C13262-3AC3-4BB9-A864-7F9D04044E71

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