About: Ge doped GaN with controllable high carrier concentration for plasmonic applications

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rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в грудні 2013 (uk) article scientifique publié en 2013 (fr) im Dezember 2013 veröffentlichter wissenschaftlicher Artikel (de)
publication date	wds:Q57424529-0BC33BF1-C367-4E9A-A0DB-37DD2C7C4960
publication date	2013-12-09 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q57424529-18E00B62-2237-4454-BBC0-E4423EC06A72
language of work or name	English
cites work	wds:Q57424529-2DCF3FF0-057A-4E68-B5E7-5A636884D9C0 wds:Q57424529-3DF960C1-DDFD-423A-8713-5E0B429B9F69 wds:Q57424529-6CAFE283-8F9C-4E74-AAA5-4990775BD4BB wds:Q57424529-742C5F78-4593-4EE8-BEC3-65301C15F2E4 wds:Q57424529-84D8F823-8B0B-4B59-A2E9-FB214D12CB25 wds:Q57424529-8A860D17-58D0-421F-815E-14CA230A3059 wds:Q57424529-C54FCF1E-E237-4C30-93AA-47AC0088F8C4 wds:Q57424529-C9FAF8E4-6941-4440-B9C9-A5A56A86B9BF wds:Q57424529-E8F7FE4F-6302-4938-AFC9-4872B6484BFA
cites work	The controlled growth of GaN nanowires. Plasmonics for future biosensors Aqueous stability of Ga- and N-polar gallium nitride Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN Strain in Si doped GaN and the Fermi level effect Plasmonic phenomena in indium tin oxide and ITO-Au hybrid films Optical signature of Mg-doped GaN: Transfer processes Mid-infrared surface plasmon resonance in zinc oxide semiconductor thin films Optical properties of InN grown on templates with controlled surface polarities
author name string	wds:Q57424529-36225EA5-1ADB-4C34-9CFB-5CB26C95F44D wds:Q57424529-37730E80-F50A-4915-8366-60DE290F372F wds:Q57424529-4B1F5247-4F87-4CAE-B9C4-32D39E1CFD8D wds:Q57424529-5AC71A26-B612-45CB-B541-575A238F26B3 wds:Q57424529-82650EA5-82AC-4802-B1F0-F0DA3DE44410 wds:Q57424529-99AE49F1-38E1-4907-AEEB-F9E35F87F376 wds:Q57424529-A50760E8-FFE4-4547-B04D-59A24E2BF779 wds:Q57424529-B9FA4D37-7808-4886-9181-5519983EF352 wds:Q57424529-BE386E30-7C03-4856-BC09-DB0181622EC7 wds:Q57424529-EC87A88F-0AFD-4D74-AE97-316C4EB5C2F2 wds:Q57424529-ED2F003B-1E79-4464-B976-6861F09E0A6F
author name string	Axel Hoffmann Zlatko Sitar Christian Nenstiel Ronny Kirste Isaac Bryan Jon-Paul Maria Milena Bobea Ramón Collazo Zachary Bryan Edward Sachet Marc P. Hoffmann
rdfs:label	Ge doped GaN with controllable high carrier concentration for plasmonic applications (en) Ge doped GaN with controllable high carrier concentration for plasmonic applications (nl)
skos:prefLabel	Ge doped GaN with controllable high carrier concentration for plasmonic applications (en) Ge doped GaN with controllable high carrier concentration for plasmonic applications (nl)
name	Ge doped GaN with controllable high carrier concentration for plasmonic applications (en) Ge doped GaN with controllable high carrier concentration for plasmonic applications (nl)
title	wds:Q57424529-679736A2-0577-49B1-9EFC-772798F884B8
title	Ge doped GaN with controllable high carrier concentration for plasmonic applications (en)
page(s)	wds:Q57424529-9B819184-EA6A-42F9-9705-F4937E4F0A8F
page(s)	242107
instance of	wds:Q57424529-A0369CBF-449E-45A6-8027-71937336971F
instance of	scholarly article
published in	wds:Q57424529-DD702C8F-7A6C-4A63-BD0F-D3F07B77A8A9
published in	Applied Physics Letters
issue	wds:Q57424529-AD132079-B4D4-445D-8ADA-EAB268A6F69D
volume	wds:Q57424529-974F8691-5889-4DF0-86D8-7C035EF9075B
issue	24
volume	103
DOI	wds:Q57424529-9411FF09-541D-47D8-A516-11F4F0D13BCC
DOI	http://dx.doi.org/10.1063/1.4848555
DOI	10.1063/1.4848555
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q57424529
is cites work of	High free carrier concentration in p-GaN grown on AlN substrates Intrinsic electronic properties of high-quality wurtzite InN
is cites work of	wds:Q57425436-47C8DF7A-3989-4D66-8827-FD1A6A665D81 wds:Q57388847-5965BAAA-A9E6-4206-8E5C-6C9013D2E5C8

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