About: Radio frequency reflectometry and charge sensing of a precision placed donor in silicon

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scholarly article by Samuel Hile et al published 31 August 2015 in Applied Physics Letters

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) article scientifique publié en 2015 (fr) наукова стаття, опублікована в серпні 2015 (uk) im August 2015 veröffentlichter wissenschaftlicher Artikel (de) scholarly article by Samuel Hile et al published 31 August 2015 in Applied Physics Letters (en)
publication date	wds:Q57387079-341FA3A8-1691-42B1-9F36-D9731D04202A
publication date	2015-08-31 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q57387079-25FF98F7-BC05-4C44-9B45-57F3DF9D49F3
language of work or name	English
cites work	wds:Q57387079-12B00999-A26F-498F-9053-3409F220ACCC wds:Q57387079-20B27FDE-65E6-4BA1-8A89-2324A5E89343 wds:Q57387079-3C58D2AC-08B1-48D8-820E-24AE065AC1A0 wds:Q57387079-62E5A031-E870-42F5-9F4A-FB28B4D0220F wds:Q57387079-6979015A-A4CF-4D69-9C62-155E78452BC7 wds:Q57387079-7A36FFC2-E655-496A-9C7B-38D6BA69CA6D wds:Q57387079-7E831798-5425-483B-A683-0C8571D502DA wds:Q57387079-85E063BE-7C5C-4B1B-982A-BFDEB4295A68 wds:Q57387079-949085F6-0069-45AF-A348-16A83487B983 wds:Q57387079-BDABF073-32A0-4D75-A9A9-852F5A64F361 wds:Q57387079-CAD4D3AB-05C3-4F5B-A60A-D6D6F7E8E1DA wds:Q57387079-D017FA9C-96EC-47F8-A0B4-CA04849432D8 wds:Q57387079-E029D180-C070-43CC-8BBD-8E67551F5B7E wds:Q57387079-E08652E1-502D-4094-880D-3EA9637B6411 wds:Q57387079-FDFA09E5-8BD1-40A1-8DAC-D5801DB5EA1A
cites work	Toward Atomic-Scale Device Fabrication in Silicon Using Scanning Probe Microscopy Investigating the regrowth surface of Si:P δ-layers toward vertically stacked three dimensional devices Single-shot readout of an electron spin in silicon Storing quantum information for 30 seconds in a nanoelectronic device. A single-atom electron spin qubit in silicon. A silicon-based nuclear spin quantum computer High-fidelity readout and control of a nuclear spin qubit in silicon. Silicon quantum electronics A single-atom transistor Single-shot read-out of an individual electron spin in a quantum dot. Spin readout and addressability of phosphorus-donor clusters in silicon. The use of etched registration markers to make four-terminal electrical contacts to STM-patterned nanostructures Probing the limits of gate-based charge sensing. Spin-lattice relaxation times of single donors and donor clusters in silicon. Charge sensing of precisely positioned p donors in Si.
author name string	wds:Q57387079-1D32B98B-286C-42AB-8CBB-29E36EE5614C wds:Q57387079-3AFB1277-2B1E-4FC2-B434-4FBE34A001C8 wds:Q57387079-5A7CB78E-580E-46AE-90E2-B276FCB59B21 wds:Q57387079-5E70A6E3-F1B8-427E-8370-EFFB161E12B1 wds:Q57387079-C94E31B5-085B-440E-A880-6D4DADFC00A4
author name string	Takashi Kobayashi Jan Verduijn Daniel Widmann Eldad Peretz Matthew G. House
rdfs:label	Radio frequency reflectometry and charge sensing of a precision placed donor in silicon (en) Radio frequency reflectometry and charge sensing of a precision placed donor in silicon (nl)
skos:prefLabel	Radio frequency reflectometry and charge sensing of a precision placed donor in silicon (en) Radio frequency reflectometry and charge sensing of a precision placed donor in silicon (nl)
name	Radio frequency reflectometry and charge sensing of a precision placed donor in silicon (en) Radio frequency reflectometry and charge sensing of a precision placed donor in silicon (nl)
author	wds:Q57387079-3A2DA120-B303-47A5-9F26-E49A47EE770C wds:Q57387079-88AA278A-E0EF-418B-9B6A-0E56F10BD655 wds:Q57387079-D40D9F28-BD44-47D9-A379-3084944C65DE
author	Michelle Simmons Sven Rogge Samuel Hile
title	wds:Q57387079-F9C60337-1082-4D18-AAA7-0FB5A57C1893
title	Radio frequency reflectometry and charge sensing of a precision placed donor in silicon (en)
page(s)	wds:Q57387079-81E703D0-8C77-4433-86F7-9F15C63A1529
page(s)	093504
Internet Archive ID	wds:Q57387079-3D8C6544-EC36-44A6-A52B-7F194153BDBF
Internet Archive ID	arxiv-1509.03315
instance of	wds:Q57387079-6628840C-98AC-4949-9A7B-74C1B651F3FA
instance of	scholarly article
main subject	wds:Q57387079-5A20B629-6193-4A7F-BD5E-35A319A865F7 wds:Q57387079-E72344EE-544C-41C3-890C-2C4735511BE2
main subject	radio frequency radio-frequency engineering
published in	wds:Q57387079-ADF8C32D-0950-4B60-90DE-7D82865EB6DF
published in	Applied Physics Letters
issue	wds:Q57387079-2FF7F5B1-AD35-490A-9734-49F4794E2D34
volume	wds:Q57387079-BF319BA5-A8EA-4FCC-887D-A97F39960DC4
issue	9
volume	107
DOI	wds:Q57387079-B05C7C41-8E92-4A79-A5C4-B871150F0E87
DOI	http://dx.doi.org/10.1063/1.4929827
DOI	10.1063/1.4929827
arXiv ID	wds:Q57387079-9DFBFC39-6D92-44F2-9047-8F9DC160D92F
arXiv ID	1509.03315
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q57387079
is cites work of	Radio frequency measurements of tunnel couplings and singlet-triplet spin states in Si:P quantum dots. CMOS platform for atomic-scale device fabrication A two-qubit gate between phosphorus donor electrons in silicon Single-electron tunneling through an individual arsenic dopant in silicon.
is cites work of	wds:Q57784397-6AE6997C-068B-4616-B47A-2BB464987664 wds:Q91969252-F0B69691-503E-4DDD-ABCD-45B528E7ADBE wds:Q36341360-ED3AC577-34C2-4E5A-A128-2C5B8308B675 wds:Q48052311-FE062E5E-E8C5-4135-B6E1-DFE6F1D552FB

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