About: Many-body levels of optically excited and multiply charged InAs nanocrystals modeled by semiempirical tight binding

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About: Many-body levels of optically excited and multiply charged InAs nanocrystals modeled by semiempirical tight binding Goto Sponge NotDistinct Permalink

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scholarly article in Physical Review B, vol. 66 no. 23, December 2002

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в грудні 2002 (uk) im Dezember 2002 veröffentlichter wissenschaftlicher Artikel (de) article scientifique publié en décembre 2002 (fr) scholarly article in Physical Review B, vol. 66 no. 23, December 2002 (en)
publication date	wds:Q57369940-9A8BA2E0-2360-4381-A05F-31F37F214ADD
publication date	2002-12-05 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q57369940-3E3ED11F-80BD-4F4E-A155-C04BA8775546
language of work or name	English
cites work	wds:Q57369940-0931A10F-4858-45AF-835D-0D6866DBDB5D wds:Q57369940-263A65BE-BE24-4065-B3A3-C971EAEC9AFA wds:Q57369940-514EB9A7-97E8-4933-B918-2F835AB96EA3 wds:Q57369940-85D71312-70D5-4766-AD10-25E8E9B627BA wds:Q57369940-9FD65311-E342-4043-A4F8-50A8546363FF wds:Q57369940-A549EB87-2FF4-4BD3-97C2-A87E32B03520 wds:Q57369940-A55642B4-4CA2-4C66-BC8C-3D6988B8934E wds:Q57369940-A9715F62-021A-4C89-8AE3-1DB276627EDA wds:Q57369940-E4FC0BE5-A49B-4205-BCCE-B671BAB9C996 wds:Q57369940-E9AFE36F-B1A0-4032-9E24-65FF20203D98 wds:Q57369940-EA45EC73-FBEB-444D-BD4C-C41FE5635D3B wds:Q57369940-EA6A8302-1599-4ACF-879F-7E0E8A509277 wds:Q57369940-EBBB5D62-5462-407B-9821-DB5B5C773092 wds:Q57369940-F5C317B5-9041-4222-A229-ABCCAD328D37
cites work	Exciton storage in semiconductor self-assembled quantum dots A quantum dot single-photon turnstile device. Artificial Atoms Shell Filling and Spin Effects in a Few Electron Quantum Dot Synthesis and characterization of nearly monodisperse CdE (E = sulfur, selenium, tellurium) semiconductor nanocrystallites Atomic Shielding Constants Semiconductor Clusters, Nanocrystals, and Quantum Dots Quantum Information Processing with Semiconductor Macroatoms A single-electron transistor made from a cadmium selenide nanocrystal Size-dependent electronic level structure of InAs nanocrystal quantum dots: Test of multiband effective mass theory Identification of atomic-like electronic states in indium arsenide nanocrystal quantum dots Electron-hole correlations in semiconductor quantum dots with tight-binding wave functions Spectroscopy of quantum levels in charge-tunable InGaAs quantum dots Surface chemistry of silicon nanoclusters
author name string	wds:Q57369940-2CE1568C-6A00-4225-920E-53FA3E0C0132 wds:Q57369940-33A9B028-FD61-4125-96E4-963FCC900575 wds:Q57369940-D5D354D8-2169-4A9F-8DF5-3678207F59AF wds:Q57369940-F8758F73-C88F-41D7-A16E-F686487EEB83 wds:Q57369940-FAC45892-05B1-40AC-9230-A99DC959F3CB
author name string	Lars Jönsson Seungwon Lee Jeongnim Kim Garnett W. Bryant John W. Wilkins
rdfs:label	Many-body levels of optically excited and multiply charged InAs nanocrystals modeled by semiempirical tight binding (en) Many-body levels of optically excited and multiply charged InAs nanocrystals modeled by semiempirical tight binding (nl)
skos:prefLabel	Many-body levels of optically excited and multiply charged InAs nanocrystals modeled by semiempirical tight binding (en) Many-body levels of optically excited and multiply charged InAs nanocrystals modeled by semiempirical tight binding (nl)
name	Many-body levels of optically excited and multiply charged InAs nanocrystals modeled by semiempirical tight binding (en) Many-body levels of optically excited and multiply charged InAs nanocrystals modeled by semiempirical tight binding (nl)
author	wds:Q57369940-FEAA3570-C1E8-4C32-BE73-BD4CAB23AB4D
author	Gerhard Klimeck
title	wds:Q57369940-A15533FB-6653-4A36-847A-E1F147159290
title	Many-body levels of optically excited and multiply charged InAs nanocrystals modeled by semiempirical tight binding (en)
instance of	wds:Q57369940-63DE5E1B-3D7A-4357-BA0B-C57C07C93E0E
instance of	scholarly article
published in	wds:Q57369940-6F1ACE64-05F5-4B2B-9BE9-8B65C85671F8
published in	Physical Review B
issue	wds:Q57369940-C5E8917B-9DD4-4B51-9C2B-AC4B5B710823
volume	wds:Q57369940-0358998A-753C-4896-877D-0B5FDD3BA382
issue	23
volume	66
DOI	wds:Q57369940-4A0A75D8-C22C-4516-A38B-1F6E052641E8
DOI	http://dx.doi.org/10.1103/PHYSREVB.66.235307
DOI	10.1103/PHYSREVB.66.235307
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q57369940
is cites work of	Experimental and atomistic theoretical study of degree of polarization from multilayer InAs/GaAs quantum dot stacks Experimental and theoretical study of polarization-dependent optical transitions in InAs quantum dots at telecommunication-wavelengths (1300-1500 nm) Symmetry reduction in multiband Hamiltonians for semiconductor quantum dots: The role of interfaces and higher energy bands Plane wave methodology for single quantum dot electronic structure calculations
is cites work of	wds:Q57368517-80EC9CC8-5965-4A14-B2AE-5470140671C2 wds:Q57368526-D32E3F4A-5986-4858-935B-4ACB561A9183 wds:Q57761684-EA2226EC-EB25-47E1-8D3F-8C6F0546BB5E wds:Q57761772-F30A36B1-C09A-44A4-84AF-650132306571

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