About: Transport scattering time probed through rf admittance of a graphene capacitor

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scholarly article in Physical Review B, vol. 83 no. 12, March 2011

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в березні 2011 (uk) im März 2011 veröffentlichter wissenschaftlicher Artikel (de) scholarly article in Physical Review B, vol. 83 no. 12, March 2011 (en)
publication date	wds:Q57188945-D55A5616-AC92-4BD9-AD75-883A7674032D
publication date	2011-03-17 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q57188945-0C3FDC7A-CDEC-44F0-8FDE-AE271CA32201
language of work or name	English
cites work	wds:Q57188945-2DFFD857-6E0E-4FD3-8DA8-F23E941EC97B wds:Q57188945-31626220-B74A-4746-A8AD-D144DD514098 wds:Q57188945-3D4C42FA-7F83-4C58-8E00-3A6A595F1A0A wds:Q57188945-418B7180-5440-4341-9CF4-982BA3C59F3B wds:Q57188945-45497761-3973-40F6-B254-C5A8443D22F5 wds:Q57188945-4BAF2EBE-0825-4844-87DF-A402F0FE8994 wds:Q57188945-5B94A600-586C-4A38-9D2E-76E4CC1689BD wds:Q57188945-792CF1B6-0822-452D-82CF-133195EA8D33 wds:Q57188945-7F5F3D7B-FA20-4086-B27C-CAB323E3A3A9 wds:Q57188945-91C642CB-2767-4ED6-8321-D66C7277D37F wds:Q57188945-928A7D3E-D55F-4FDA-B000-8895EA05DC16 wds:Q57188945-965CB0AF-A924-40E6-921B-F504B2DF6B78 wds:Q57188945-9BF0F9A2-BB91-456B-86AF-2706CD1F7FC1 wds:Q57188945-B7106FB2-B452-454F-9926-90E1CF5C9BA2 wds:Q57188945-DA86618C-1452-494C-9D78-1F662EBD26A0 wds:Q57188945-DFC0F6F0-BD51-424F-AEC1-EFFE1FAC2846 wds:Q57188945-E5CE8EB9-2D24-4F10-A57C-FCF2C993B07E wds:Q57188945-F94C0248-15B9-4872-94B5-4404C82D6A85 wds:Q57188945-FBFAF93E-E145-4914-B9EA-2330E522E878
cites work	Boron nitride substrates for high-quality graphene electronics. Measurement of the quantum capacitance of graphene Charged-impurity scattering in graphene Electric Field Effect in Atomically Thin Carbon Films Quantum transport of massless Dirac fermions. Effect of disorder on transport in graphene. Approaching ballistic transport in suspended graphene. Graphene transistors The electronic properties of graphene Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer Controlling Electron-Phonon Interactions in Graphene at Ultrahigh Carrier Densities Intrinsic and extrinsic performance limits of graphene devices on SiO2. Electron scattering on microscopic corrugations in graphene. 100-GHz transistors from wafer-scale epitaxial graphene. Ultrahigh electron mobility in suspended graphene Effect of a high-kappa environment on charge carrier mobility in graphene. Defect scattering in graphene. Contact and edge effects in graphene devices. Single carbon nanotube transistor at GHz frequency.
author name string	wds:Q57188945-2B6426B8-6BA0-46F7-BF79-A79AC46A264C wds:Q57188945-3D734C58-CB19-4438-9D6D-10B7D9A3C527 wds:Q57188945-C57570B7-4D0A-4CAC-8F79-74F67A6D9B18 wds:Q57188945-DD6699D2-8C1B-4222-BA19-968EC7EAB9FA wds:Q57188945-DF30E769-22B3-4F9B-903A-7A490BFF6DAE wds:Q57188945-E90E737C-832C-4EA2-949F-F6CF1146E939
author name string	A. C. Betz B. Plaçais G. Fève J.-M. Berroir T. Kontos J. Chaste
rdfs:label	Transport scattering time probed through rf admittance of a graphene capacitor (en) Transport scattering time probed through rf admittance of a graphene capacitor (nl)
skos:prefLabel	Transport scattering time probed through rf admittance of a graphene capacitor (en) Transport scattering time probed through rf admittance of a graphene capacitor (nl)
name	Transport scattering time probed through rf admittance of a graphene capacitor (en) Transport scattering time probed through rf admittance of a graphene capacitor (nl)
author	wds:Q57188945-06BAA48A-84D9-4B39-BD21-079967B959C8 wds:Q57188945-987B5AD5-760D-4FF7-891E-8645E2AE02CD
author	B. Huard Emiliano Pallecchi
title	wds:Q57188945-F26AC40F-EEA4-4A1F-B6B4-9ADDA255F2B6
title	Transport scattering time probed through rf admittance of a graphene capacitor (en)
instance of	wds:Q57188945-E4420A73-5F23-4F75-A406-9F7FEE4136D5
instance of	scholarly article
main subject	wds:Q57188945-29D998F0-0230-4C86-848E-F358923445CE
main subject	graphene
published in	wds:Q57188945-F93C54C9-66AA-4565-A8C7-C284CF005268
published in	Physical Review B
issue	wds:Q57188945-3D19E836-9611-4897-8722-8C748B86AA3C
volume	wds:Q57188945-22B63DB3-9E2D-48FC-B00F-D35035165F5E
issue	12
volume	83
DOI	wds:Q57188945-5BAD04A1-51D6-435D-B01F-E522225B58BF
DOI	http://dx.doi.org/10.1103/PHYSREVB.83.125408
DOI	10.1103/PHYSREVB.83.125408
arXiv ID	wds:Q57188945-DF4ACE9B-0CB5-4283-97D2-C6F268B61563
arXiv ID	1005.3388
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q57188945
is cites work of	Hot electron cooling by acoustic phonons in graphene. Graphene microwave transistors on sapphire substrates A corner reflector of graphene Dirac fermions as a phonon-scattering sensor Contact gating at GHz frequency in graphene. Decoherence in a double-dot Aharonov-Bohm interferometer: Numerical renormalization group study Admittance of T-stub graphene nanoribbon structure.
is cites work of	wds:Q57188943-CB5F4901-85D1-48F4-AC52-D506B229F82C wds:Q51318319-6CFF59B8-9416-4B6F-9A97-C46EEE300AEA wds:Q38477670-B1072C49-4D46-44BC-B112-6EEA5FBE7288 wds:Q58221945-47674C77-CD35-4376-92C1-C452E3A12A71 wds:Q44909737-F49DD11E-E6F8-46F4-BE3E-91CFE408F8BB wds:Q92501957-DBE8EE9D-18F3-442F-8C48-CD6FE5382318

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