About: Proposal for a New Class of Materials: Spin Gapless Semiconductors

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scientific article published in Physical Review Letters

Attributes	Values
rdf:type	Item
description	artículu científicu (ast) wetenschappelijk artikel (nl) наукова стаття, опублікована у квітні 2008 (uk) im April 2008 veröffentlichter wissenschaftlicher Artikel (de) article publié dans la revue scientifique Physical Review Letters (fr) scientific article published in Physical Review Letters (en)
publication date	wds:Q56603531-3FA7A1DA-4D1B-45E9-B264-F4CC9DE7ADAD
publication date	2008-04-18 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q56603531-BA56A039-F62C-4137-AB00-E925EB0BA9A8
language of work or name	English
cites work	wds:Q56603531-508A52F8-0AE1-4EFB-AD71-0DD7F250BDE0 wds:Q56603531-63447CEA-624A-4661-A028-C6BD19191860 wds:Q56603531-791E2275-7744-484C-8060-B869FBCECEAB wds:Q56603531-B6145B6A-7432-4765-8451-6BA95F553AC9 wds:Q56603531-CEAED05F-3921-4E60-9163-B2FFBEF8D808 wds:Q56603531-D7362118-9A3B-4C9A-9997-FF20CB6927D0
cites work	Electric Field Effect in Atomically Thin Carbon Films Two-dimensional gas of massless Dirac fermions in graphene Experimental observation of the quantum Hall effect and Berry's phase in graphene An all‐electron numerical method for solving the local density functional for polyatomic molecules From molecules to solids with the DMol3 approach (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs
author name string	wds:Q56603531-7B5EABC5-E932-431B-B44C-95C127D15D07
author name string	X. L. Wang
rdfs:label	Proposal for a New Class of Materials: Spin Gapless Semiconductors (en) Proposal for a New Class of Materials: Spin Gapless Semiconductors (nl)
skos:prefLabel	Proposal for a New Class of Materials: Spin Gapless Semiconductors (en) Proposal for a New Class of Materials: Spin Gapless Semiconductors (nl)
name	Proposal for a New Class of Materials: Spin Gapless Semiconductors (en) Proposal for a New Class of Materials: Spin Gapless Semiconductors (nl)
author	wds:Q56603531-B6ED42AB-726A-4772-B13F-C58EDAD4873F
author	Xiaolin Wang
title	wds:Q56603531-2545C5CF-A981-4898-82D2-B31707325F52
title	Proposal for a new class of materials: spin gapless semiconductors (en)
page(s)	wds:Q56603531-10CF2760-CCC7-458B-B970-76B1C5114B40
page(s)	156404
instance of	wds:Q56603531-78B2C19E-1A44-49F1-BDB8-402E2675A3EA
instance of	scholarly article
main subject	wds:Q56603531-B9DB35B3-D399-4102-8590-F910AD95E3E6
main subject	semiconductor
PubMed ID	wds:Q56603531-21855E2B-327C-49A5-9189-E732736E86DB
PubMed ID	http://rdf.ncbi.nlm.nih.gov/pubchem/reference/18518135
PubMed ID	18518135
published in	wds:Q56603531-117CBB16-800E-43F4-B940-D404B0849E4B
published in	Physical Review Letters
issue	wds:Q56603531-CA5FCFE4-6735-483D-B62B-8C0B51E8B485
volume	wds:Q56603531-CB4B97D8-6AD9-4324-94DD-06DB4ABE43B9
issue	15
volume	100
DOI	wds:Q56603531-CFE29359-EEC4-4AA4-BD3E-F8FFE903C291
DOI	http://dx.doi.org/10.1103/PHYSREVLETT.100.156404
DOI	10.1103/PHYSREVLETT.100.156404
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q56603531
is cites work of	A dye-sensitized visible light photocatalyst-Bi24O31Cl10 Adsorbing the 3d-transition metal atoms to effectively modulate the electronic and magnetic behaviors of zigzag SiC nanoribbons An Effective Approach to Achieve a Spin Gapless Semiconductor-Half-Metal-Metal Transition in Zigzag Graphene Nanoribbons: Attaching A Floating Induced Dipole Field viaπ-πInteractions First principles prediction of the magnetic properties of Fe-X₆ (X = S, C, N, O, F) doped monolayer MoS₂. Electronic structure and its external electric field modulation of PbPdO2 ultrathin slabs with (002) and (211) preferred orientations Strain tuning of the charge density wave in monolayer and bilayer 1T-TaS2. Bipolar magnetic materials for electrical manipulation of spin-polarization orientation Proposal of a general scheme to obtain room-temperature spin polarization in asymmetric antiferromagnetic semiconductors Bipolar magnetic semiconductors: a new class of spintronics materials Near-room-temperature Chern insulator and Dirac spin-gapless semiconductor: nickel chloride monolayer. First Principles Study of Electronic and Magnetic Properties of Co-Doped Armchair Graphene Nanoribbons Zero-gap materials for future spintronics, electronics and optics Theory of Heusler and Full-Heusler Compounds Monolayer MXenes: promising half-metals and spin gapless semiconductors. Nucleation and annihilation of skyrmions in Mn2CoAl observed through the topological Hall effect Rare earth-based quaternary Heusler compounds MCoVZ (M = Lu, Y; Z = Si, Ge) with tunable band characteristics for potential spintronic applications. Theoretical prediction of strain tuneable quaternary spintronic Heusler compounds. Tuning electronic and magnetic properties of silicene with magnetic superhalogens. First-Principles Prediction of Spin-Polarized Multiple Dirac Rings in Manganese Fluoride. Heusler, Weyl and Berry Tuning the Electronic and Magnetic Properties of Graphene Flake Embedded in Boron Nitride Nanoribbons with Transverse Electric Fields: First-Principles Calculations Theory of the Dirac half metal and quantum anomalous Hall effect in Mn-intercalated epitaxial graphene Preparation and physical properties of a Cr3Al film with a DO3 structure Prediction of fully compensated ferrimagnetic spin-gapless semiconducting FeMnGa/Al/In half Heusler alloys Effect of swap disorder on the physical properties of the quaternary Heusler alloy PdMnTiAl: a first-principles study Computational Insights Into the Electronic Structure and Magnetic Properties of Rhombohedral Type Half-Metal GdMnO3 With Multiple Dirac-Like Band Crossings Covalent Decoration of Cortical Membranes with Graphene Oxide as a Substrate for Dental Pulp Stem Cells. Strain Conditions for the Inverse Heusler Type Fully Compensated Spin-Gapless Semiconductor Ti₂MnAl: A First-Principles Study Investigation of the structural competing and atomic ordering in Heusler compounds Fe2NiSi and Ni2FeSi under strain condition Coexistence of valley polarization and Chern insulating states in MoS2 monolayers with n-p codoping The effects of the formation of Stone-Wales defects on the electronic and magnetic properties of silicon carbide nanoribbons: a first-principles investigation Robust Spin-Gapless Behavior in the Newly Discovered Half Heusler Compound MnPK Palladium (III) Fluoride Bulk and PdF3/Ga2O3/PdF3 Magnetic Tunnel Junction: Multiple Spin-Gapless Semiconducting, Perfect Spin Filtering, and High Tunnel Magnetoresistance Ab-initio study of structural, elastic, thermal, electronic and magnetic properties of quaternary Heusler alloys CoMnCrZ (Z = Al, As, Si, Ge) Theoretical exploration of the potential applications of Sc-based MXenes. Strain Engineered Band Gaps and Electronic Properties in PbPdO₂ and PbPdCoO₂ Slabs Dirac half-metallicity of Thin PdCl3 Nanosheets: Investigation of the Effects of External Fields, Surface Adsorption and Defect Engineering on the Electronic and Magnetic Properties Tunable electronic structure and magnetic moment in C2N nanoribbons with different edge functionalization atoms.
is cites work of	wds:Q38769665-FE13D6EF-EF62-41B9-8D83-9478CB9B140B wds:Q41191922-FF561B0E-047C-4549-8D69-FFFA1D7814C6 wds:Q58099748-7E6E19CF-D794-44AA-847B-BC7EF0FF3488 wds:Q62474660-40B88801-CFEC-46AA-9BA3-42234948139D wds:Q62681252-5BD4341D-5845-48F0-AE8D-A9B71254BD16 wds:Q42659894-7A709B1B-28B9-4C8D-AE7E-D7496D9F0698 wds:Q39357488-E85BC217-9327-4CC4-B6B4-F6E05818916E wds:Q47111067-9D8A58BE-47CE-4F05-9656-7D25863BBF58

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