About: Direct observation of quantum confinement of Si nanocrystals in Si-rich nitrides

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scholarly article in Physical Review B, vol. 85 no. 8, February 2012

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) article scientifique publié en 2012 (fr) наукова стаття, опублікована в лютому 2012 (uk) im Februar 2012 veröffentlichter wissenschaftlicher Artikel (de) scholarly article in Physical Review B, vol. 85 no. 8, February 2012 (en)
publication date	wds:Q56333287-6F965951-7DC4-47A2-B871-EE71182B8EC9
publication date	2012-02-29 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q56333287-2950461D-317D-4B78-9D0A-0031E70E7742
language of work or name	English
cites work	wds:Q56333287-01B273AC-AABB-45C0-8767-A658BC4DA342 wds:Q56333287-0A1A5512-7D40-4126-92A4-69D433B063EF wds:Q56333287-0DF434C6-1361-42B5-BA9C-8CD067233716 wds:Q56333287-20A2F213-10E6-4B17-81E8-F1934769148D wds:Q56333287-211FF86C-1F86-478B-8B94-5A89BE3307FE wds:Q56333287-5378E15D-3938-4E5A-A0A5-AB2DB20D41DC wds:Q56333287-8308F1E8-4C2B-4C22-BEA6-7CE342235CFE wds:Q56333287-85ECCAF3-11FD-4755-A349-9E3B9B95BEBD
cites work	An electron microscope for the aberration-corrected era. Optical gain in silicon nanocrystals Third generation photovoltaics: Ultra-high conversion efficiency at low cost Atomic-resolution chemical analysis using a scanning transmission electron microscope Quantum size effects in the volume plasmon excitation of bismuth nanoparticles investigated by electron energy loss spectroscopy Effect of thermal treatment on the growth, structure and luminescence of nitride-passivated silicon nanoclusters. Electron energy loss spectroscopy on alkylated silicon nanocrystals Smart acquisition EELS
author name string	wds:Q56333287-4C81A33D-7E02-46F1-B99A-BD519E46D2A5 wds:Q56333287-5AF3E2A3-7C81-4C0E-9D54-E05F343584B1 wds:Q56333287-86224600-A0E3-41FE-A66D-A59AD9C9B0A6
author name string	D. M. Kepaptsoglou A. Olsen P. D. Nguyen
rdfs:label	Direct observation of quantum confinement of Si nanocrystals in Si-rich nitrides (en) Direct observation of quantum confinement of Si nanocrystals in Si-rich nitrides (nl)
skos:prefLabel	Direct observation of quantum confinement of Si nanocrystals in Si-rich nitrides (en) Direct observation of quantum confinement of Si nanocrystals in Si-rich nitrides (nl)
name	Direct observation of quantum confinement of Si nanocrystals in Si-rich nitrides (en) Direct observation of quantum confinement of Si nanocrystals in Si-rich nitrides (nl)
author	wds:Q56333287-49D2BCC7-7384-4F30-BF11-45FFE66A83FF
author	Quentin Ramasse
title	wds:Q56333287-E7818259-1E71-4B12-8DF3-F2FB1B25C64F
title	Direct observation of quantum confinement of Si nanocrystals in Si-rich nitrides (en)
instance of	wds:Q56333287-C0E23801-DC84-4B5D-99CF-BE1C0AE9A561
instance of	scholarly article
published in	wds:Q56333287-2C5CF586-5BD6-4A1B-A7B2-0DEB98AF7071
published in	Physical Review B
issue	wds:Q56333287-D95C3013-B6FA-46D5-A36E-227D681F6B3A
volume	wds:Q56333287-F2C1A577-BAE0-41AB-ACE4-BB95B9D588EA
issue	8
volume	85
DOI	wds:Q56333287-0EE6F964-C263-40A3-A4E2-784EFA5E847F
DOI	http://dx.doi.org/10.1103/PHYSREVB.85.085315
DOI	10.1103/PHYSREVB.85.085315
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q56333287
is cites work of	Structural and compositional properties of Er-doped silicon nanoclusters/oxides for multilayered photonic devices studied by STEM-EELS. Enhancement of electroluminescence from embedded Si quantum dots/SiO2multilayers film by localized-surface-plasmon and surface roughening Tunable electroluminescence in planar graphene/SiO(2) memristors Retrieving the electronic properties of silicon nanocrystals embedded in a dielectric matrix by low-loss EELS. Twinned silicon and germanium nanocrystals: Formation, stability and quantum confinement Impact of oxygen bonding on the atomic structure and photoluminescence properties of Si-rich silicon nitride thin films Quantum confinement of volume plasmons and interband transitions in germanium nanocrystals Quantitative parameters for the examination of InGaN QW multilayers by low-loss EELS. Electron energy loss spectroscopy on semiconductor heterostructures for optoelectronics and photonics applications. Optical studies of amorphous Ge nanostructures in Al2O3 produced by pulsed laser deposition
is cites work of	wds:Q50229952-07F60B68-762C-4C17-8609-E317A68E171F wds:Q56333300-5BF0E920-FAD7-4767-8106-8F4D05B95344 wds:Q43658615-1C02AF55-8018-4464-B712-AD71E49B1938 wds:Q35386142-C2CAAED2-8247-4B1C-B1BD-16A1468C2742 wds:Q57882686-D7AC1DA4-DD4B-40B2-9A5B-D8C68891B0D8 wds:Q35772430-E2C55FF2-A0F8-4282-8C93-4007F700E28F wds:Q39514868-9E43CCA9-A1B8-477B-9B96-426F8E4DC1D1 wds:Q56333293-6ED70128-4407-4FCC-BCC7-4C483A858032 wds:Q35813625-82F4D609-D27A-4E47-AAEE-95743A9059A4 wds:Q61936322-09ABE9DD-504B-4F59-B64F-CE28B22078FF

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