About: Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors.

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scientific article published on January 2013

Attributes	Values
rdf:type	Item
description	videnskabelig artikel (da) article científic (ca) articolo scientifico (it) artigo científico (pt) bilimsel makale (tr) vedecký článok (sk) vetenskaplig artikel (sv) vědecký článek (cs) wetenschappelijk artikel (nl) wissenschaftlicher Artikel (de) научни чланак (sr) article scientifique (fr) artículu científicu espublizáu en 2013 (ast) наукова стаття, опублікована в січні 2013 (uk) مقالة علمية نشرت في يناير 2013 (ar) scientific article published on January 2013 (en)
publication date	wds:Q37193160-B8ED6DD2-0F9A-4011-8DD7-C5127D726E68
publication date	2013-01-01 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q37193160-C8638D16-333A-4362-AB03-75995E4EB70D
language of work or name	English
exact match	wds:Q37193160-A020F84E-2B99-4473-BCD5-AFB39FEC9F19
exact match	https://scigraph.springernature.com/pub.10.1038/srep02737
cites work	wds:Q37193160-2472C5FA-BE8A-4EDC-9763-8E7737834FEF wds:Q37193160-309C6752-3BB3-4B67-A456-DD5E688D77C3 wds:Q37193160-344653CB-B1AB-468D-8994-7992EA64A18F wds:Q37193160-436844E2-CD9B-4ACA-9C5F-369CA7B08DBE wds:Q37193160-45773608-7292-4746-B1F9-2A90B089CCF1 wds:Q37193160-4BE86226-4DD1-493D-9AD4-B40A5418D190 wds:Q37193160-55FD0DAD-2523-40FD-A867-FCA8A012FE12 wds:Q37193160-651B4AE2-698F-4DA1-BE37-E47F8955DF23 wds:Q37193160-851B7309-5C8F-4376-9886-8A7272DC2C12 wds:Q37193160-C1F83C55-5AAA-4C7F-BD3D-178DF8502991 wds:Q37193160-CE06A325-9993-41CA-BC4A-33CD4CE3C222 wds:Q37193160-DB933A75-5166-4341-B59D-324F5868C476 wds:Q37193160-EF1485DA-8C91-45EA-97D8-B4B245057D65
cites work	A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface Artificial charge-modulationin atomic-scale perovskite titanate superlattices A comparative analysis of deep level emission in ZnO layers deposited by various methods Applied physics. Transparent electronics Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors Metallic and insulating interfaces of amorphous SrTiO₃-based oxide heterostructures. Present status of amorphous In-Ga-Zn-O thin-film transistors Observation of the fractional quantum Hall effect in an oxide Highly Stable Transparent Amorphous Oxide Semiconductor Thin-Film Transistors Having Double-Stacked Active Layers Fully Transparent ZnO Thin-Film Transistor Produced at Room Temperature Defect pool in amorphous-silicon thin-film transistors High-Performance Al–Sn–Zn–In–O Thin-Film Transistors: Impact of Passivation Layer on Device Stability Influence of active layer thickness and annealing in zinc oxide TFT grown by atomic layer deposition
author name string	wds:Q37193160-5CF810B1-0710-4BDD-ABD6-1E1C17DAB8BB wds:Q37193160-CA4C560A-76EC-4803-8E9F-8BD6B9D4AB82 wds:Q37193160-CED4CE2A-A831-4ACA-AB51-DB0C3C934832
author name string	Sang Yeol Lee Cheol Hyoun Ahn Karuppanan Senthil
rdfs:label	Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors. (en) Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors. (nl) Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors. (ast)
skos:prefLabel	Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors. (en) Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors. (nl) Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors. (ast)
name	Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors. (en) Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors. (nl) Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors. (ast)
author	wds:Q37193160-3DE1A0C1-54CE-4F87-A878-4DEC21D6DDD8
author	Hyung Koun Cho
title	wds:Q37193160-EDCBE0D6-86CD-4DB7-B2B6-187314DD7CF5
title	Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors (en)
page(s)	wds:Q37193160-9F176E9D-6BB3-43BF-8CB4-3080923BDEB1
page(s)	2737
instance of	wds:Q37193160-B2981901-2E20-4761-AD7D-EEAA08BBE820
instance of	scholarly article
main subject	wds:Q37193160-0E631D39-4317-49EF-BF7D-DD2CD78CBCD9 wds:Q37193160-8F633712-37F1-43E8-99D9-1FC3AAD04413
main subject	semiconductor thin film
PubMed ID	wds:Q37193160-4679F1FB-7996-428C-8EC7-7F28D911B786
PubMed ID	http://rdf.ncbi.nlm.nih.gov/pubchem/reference/24061388
PubMed ID	24061388
published in	wds:Q37193160-107E9FDF-3DBD-4D1A-86B3-59C338746EE1
published in	Scientific Reports
volume	wds:Q37193160-BAFC9144-0BE0-4C16-8245-92744112867E
volume	3
DOI	wds:Q37193160-19785FA2-BFC7-4F26-B4D5-1A39189BD8D4
DOI	http://dx.doi.org/10.1038/SREP02737
DOI	10.1038/SREP02737
copyright license	wds:Q37193160-d52e8151-b932-4c71-afa7-79378c088c38
copyright status	wds:Q37193160-621af539-1a8d-465d-ae9b-92c5d3a9c43c
copyright license	Creative Commons Attribution-NonCommercial-NoDerivs 3.0 Unported
copyright status	copyrighted
ResearchGate publication ID	wds:Q37193160-B9E2950C-2298-4FAA-81F4-7B80608FEB0A
ResearchGate publication ID	256984557
PMCID	wds:Q37193160-FA39F3BC-8F8E-4936-A2B0-72421C3EF174
PMCID	3781393
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q37193160
is cites work of	Indium-Free Fully Transparent Electronics Deposited Entirely by Atomic Layer Deposition. High Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices. Exploring Two-Dimensional Transport Phenomena in Metal Oxide Heterointerfaces for Next-Generation, High-Performance, Thin-Film Transistor Technologies All-Aluminum Thin Film Transistor Fabrication at Room Temperature. Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution.

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