About: Fabrication, characterization and simulation of Ω-gate twin poly-Si FinFET nonvolatile memory

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scientific article published on 22 July 2013

Attributes	Values
rdf:type	Item
description	videnskabelig artikel (da) article científic (ca) articolo scientifico (it) artigo científico (pt) bilimsel makale (tr) vedecký článok (sk) vetenskaplig artikel (sv) vědecký článek (cs) wetenschappelijk artikel (nl) wissenschaftlicher Artikel (de) научни чланак (sr) article scientifique (fr) artículu científicu espublizáu en 2013 (ast) наукова стаття, опублікована в липні 2013 (uk) scientific article published on 22 July 2013 (en) مقالة علمية نشرت في 22 يوليو 2013 (ar)
publication date	wds:Q37070889-E5D77E24-4CF4-4CE3-B9AA-B87CBEE06A11
publication date	2013-07-22 00:00:00Z (xsd:dateTime)
exact match	wds:Q37070889-C4E5F255-128B-4CBD-B4AF-B7F808F020C4
exact match	https://scigraph.springernature.com/pub.10.1186/1556-276x-8-331
cites work	wds:Q37070889-054C753D-7E21-4FCC-810B-865E24C73532 wds:Q37070889-070FAC57-69F4-404F-876A-E45833090204 wds:Q37070889-15BEE37C-790D-4119-9F41-6D0C390FB5DC wds:Q37070889-2A35860B-6A6C-4043-B271-02DC5CEC6D28 wds:Q37070889-6D2E0902-FDFD-43CB-88C7-F631543DD379
cites work	Developing a theoretical relationship between electrical resistivity, temperature, and film thickness for conductors Low-temperature poly-Si nanowire junctionless devices with gate-all-around TiN/Al2O3 stack structure using an implant-free technique Growth of low temperature silicon nano-structures for electronic and electrical energy generation applications. Nano-Floating Gate Memory Devices Composed of ZnO Thin-Film Transistors on Flexible Plastics A junctionless SONOS nonvolatile memory device constructed with in situ-doped polycrystalline silicon nanowires
author name string	wds:Q37070889-108773DD-E3A3-439E-B449-733D131E5FDC wds:Q37070889-1EC8BDA0-03CC-4D28-BB62-656320F32D96 wds:Q37070889-47686B79-0CC9-43CC-A948-25C19CA56A42 wds:Q37070889-6AE8536F-F667-48B9-BA19-FA78BD8942CF wds:Q37070889-96B31F52-F7EA-420A-AA2F-22202B4C77EA wds:Q37070889-99A88D4B-AB51-46A9-8610-24CDFC589C38 wds:Q37070889-CC5069FC-964F-4EDD-99A2-CDE2BAAB21A5
author name string	Chun-Yen Chang Kuan-Cheng Liu Yung-Chun Wu Min-Feng Hung Lun-Chun Chen Mu-Shih Yeh Yi-Ruei Jhan
rdfs:label	Fabrication, characterization and simulation of Ω-gate twin poly-Si FinFET nonvolatile memory (en) Fabrication, characterization and simulation of Ω-gate twin poly-Si FinFET nonvolatile memory (ast) Fabrication, characterization and simulation of Ω-gate twin poly-Si FinFET nonvolatile memory. (nl)
skos:prefLabel	Fabrication, characterization and simulation of Ω-gate twin poly-Si FinFET nonvolatile memory (en) Fabrication, characterization and simulation of Ω-gate twin poly-Si FinFET nonvolatile memory (ast) Fabrication, characterization and simulation of Ω-gate twin poly-Si FinFET nonvolatile memory. (nl)
name	Fabrication, characterization and simulation of Ω-gate twin poly-Si FinFET nonvolatile memory (en) Fabrication, characterization and simulation of Ω-gate twin poly-Si FinFET nonvolatile memory (ast) Fabrication, characterization and simulation of Ω-gate twin poly-Si FinFET nonvolatile memory. (nl)
title	wds:Q37070889-357CC5F7-C9FC-4524-B7D3-191BDDD6165D
title	Fabrication, characterization and simulation of Ω-gate twin poly-Si FinFET nonvolatile memory (en)
page(s)	wds:Q37070889-7A80D698-EC71-4E26-A5AF-851ABB719E1D
page(s)	331
instance of	wds:Q37070889-852FD032-5223-4E5C-B1E0-708A81326847
instance of	scholarly article
PubMed ID	wds:Q37070889-C25CFE05-838F-4E87-8011-A512D7E5CF38
PubMed ID	http://rdf.ncbi.nlm.nih.gov/pubchem/reference/23875863
PubMed ID	23875863
published in	wds:Q37070889-D27301B0-42DB-4D33-9D92-CF3C5477071A
published in	Nanoscale Research Letters
issue	wds:Q37070889-8997CD50-427E-409A-8699-3F12455DDC84
volume	wds:Q37070889-5438C3E2-2241-4505-A504-B8D746655B2E
issue	1
volume	8
DOI	wds:Q37070889-C15B587F-192E-42A1-9A2B-0B8F400FC7FA
DOI	http://dx.doi.org/10.1186/1556-276X-8-331
DOI	10.1186/1556-276X-8-331
PMCID	wds:Q37070889-F9D5D927-3371-4A67-B912-85C22295F6EB
PMCID	3733706
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q37070889
is cites work of	Status and Prospects of ZnO-Based Resistive Switching Memory Devices. A single poly-Si gate-all-around junctionless fin field-effect transistor for use in one-time programming nonvolatile memory
is cites work of	wds:Q34514446-4318F109-A6B0-4146-B4A7-5AE734C6A1EE wds:Q28079551-32E6AF15-98E5-4854-A7BB-0EC0F09B4772

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