About: Dimer-adatom-stacking-fault (DAS) and non-DAS (111) semiconductor surfaces: A comparison of Ge(111)-c(2 x 8) to Si(111)-(2 x 2), -(5 x 5), -(7 x 7), and -(9 x 9) with scanning tunneling microscopy

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About: Dimer-adatom-stacking-fault (DAS) and non-DAS (111) semiconductor surfaces: A comparison of Ge(111)-c(2 x 8) to Si(111)-(2 x 2), -(5 x 5), -(7 x 7), and -(9 x 9) with scanning tunneling microscopy Goto Sponge Distinct Permalink

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scientific article published on 01 January 1989

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в січні 1989 (uk) im Januar 1989 veröffentlichter wissenschaftlicher Artikel (de) artículu científicu espublizáu en xineru de 1989 (ast) artikull shkencor i botuar më 01 janar 1989 (sq) scientific article published on 01 January 1989 (en)
publication date	wds:Q78013052-65DF71F1-6426-4763-971E-9F4357060B81
publication date	1989-01-01 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q78013052-09E64F15-9A4A-481E-8383-65B8554970CE
language of work or name	English
author name string	wds:Q78013052-16055EE5-80AE-49A9-9103-EBA1D6E66671 wds:Q78013052-27BC1C2C-92F1-48EE-9113-20EC687A0252 wds:Q78013052-4179A958-6E5C-4435-83F9-EC24F98EAE47
author name string	Becker RS Klitsner T Vickers JS
rdfs:label	Dimer-adatom-stacking-fault (DAS) and non-DAS (111) semiconductor surfaces: A comparison of Ge(111)-c(2 x 8) to Si(111)-(2 x 2), -(5 x 5), -(7 x 7), and -(9 x 9) with scanning tunneling microscopy (en) Dimer-adatom-stacking-fault (DAS) and non-DAS (111) semiconductor surfaces: A comparison of Ge(111)-c(2 x 8) to Si(111)-(2 x 2), -(5 x 5), -(7 x 7), and -(9 x 9) with scanning tunneling microscopy (nl) Dimer-adatom-stacking-fault (DAS) and non-DAS (111) semiconductor surfaces: A comparison of Ge(111)-c(2 x 8) to Si(111)-(2 x 2), -(5 x 5), -(7 x 7), and -(9 x 9) with scanning tunneling microscopy (sq)
skos:prefLabel	Dimer-adatom-stacking-fault (DAS) and non-DAS (111) semiconductor surfaces: A comparison of Ge(111)-c(2 x 8) to Si(111)-(2 x 2), -(5 x 5), -(7 x 7), and -(9 x 9) with scanning tunneling microscopy (en) Dimer-adatom-stacking-fault (DAS) and non-DAS (111) semiconductor surfaces: A comparison of Ge(111)-c(2 x 8) to Si(111)-(2 x 2), -(5 x 5), -(7 x 7), and -(9 x 9) with scanning tunneling microscopy (nl) Dimer-adatom-stacking-fault (DAS) and non-DAS (111) semiconductor surfaces: A comparison of Ge(111)-c(2 x 8) to Si(111)-(2 x 2), -(5 x 5), -(7 x 7), and -(9 x 9) with scanning tunneling microscopy (sq)
name	Dimer-adatom-stacking-fault (DAS) and non-DAS (111) semiconductor surfaces: A comparison of Ge(111)-c(2 x 8) to Si(111)-(2 x 2), -(5 x 5), -(7 x 7), and -(9 x 9) with scanning tunneling microscopy (en) Dimer-adatom-stacking-fault (DAS) and non-DAS (111) semiconductor surfaces: A comparison of Ge(111)-c(2 x 8) to Si(111)-(2 x 2), -(5 x 5), -(7 x 7), and -(9 x 9) with scanning tunneling microscopy (nl) Dimer-adatom-stacking-fault (DAS) and non-DAS (111) semiconductor surfaces: A comparison of Ge(111)-c(2 x 8) to Si(111)-(2 x 2), -(5 x 5), -(7 x 7), and -(9 x 9) with scanning tunneling microscopy (sq)
author	wds:Q78013052-FAF70515-F4A1-4847-ADB8-759E1C413085
author	Brian Swartzentruber
title	wds:Q78013052-D847F0A8-17DF-48F1-B57A-245B2FED3841
title	Dimer-adatom-stacking-fault (DAS) and non-DAS (111) semiconductor surfaces: A comparison of Ge(111)-c(2 x 8) to Si(111)-(2 x 2), -(5 x 5), -(7 x 7), and -(9 x 9) with scanning tunneling microscopy (en)
page(s)	wds:Q78013052-B1DC405F-2FA8-477A-89AF-C3AC6DAB1C27
page(s)	1633-1647
instance of	wds:Q78013052-034F226B-F9FB-4774-A3A2-A77D0171F9AB
instance of	scholarly article
PubMed ID	wds:Q78013052-987E14C2-79B5-4BAB-91E7-17FCCA07FD98
PubMed ID	http://rdf.ncbi.nlm.nih.gov/pubchem/reference/9948378
PubMed ID	9948378
published in	wds:Q78013052-BAF292B4-4BFA-47EA-BE8F-B8E97949004F
published in	Physical Review B
issue	wds:Q78013052-EA3F3A74-9759-4361-93F3-4A06A0B18AC4
volume	wds:Q78013052-B1FEEC0E-0C79-4C26-801B-E6FE128A6741
issue	3
volume	39
DOI	wds:Q78013052-178332B8-857B-449A-809F-2828E65DCFA4
DOI	http://dx.doi.org/10.1103/PHYSREVB.39.1633
DOI	10.1103/PHYSREVB.39.1633
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q78013052
is cites work of	Atom inlays performed at room temperature using atomic force microscopy Phase transitions on the Ge(111) and Si(111) surfaces from core-level studies Surface diffusion and phase transition on the Ge(111) surface studied by scanning tunneling microscopy Direct measurement of diffusion by hot tunneling microscopy: Activation energy, anisotropy, and long jumps Do we know the true structure of Ge(111)c(2 x 8)? Ab initio molecular-dynamical relaxation applied to the silicon(111)-5 x 5 surface reconstruction Surface core-level shifts on Ge(100): c(4 x 2) to 2 x 1 and 1 x 1 phase transitions Tunneling microscope observation of a structural surface phase transition: Structure, fluctuations, and local effects Delocalized Surface State in Epitaxial Si(111) Film with Spontaneous √3 × √3 Superstructure. Scanning-tunneling-microscopy studies of the oxidation of Ge(111)-c(2 x 8) Site-specific hydrogen reactivity and reverse charge transfer on Ge(111)-c(2 x 8) Energetics of the Si(111) and Ge(111) surfaces and the effect of strain Atomic dynamics and structure of the Ge(111)c(2 x 8) surface Energy-Filtered Scanning Tunneling Microscopy using a Semiconductor Tip C60-induced reconstruction of the Ge(111) surface Adsorption, thermal reaction, and desorption of disilane on Ge(111)-c(2 x 8) STM study of surface reconstructions of Si(111):B Gallium-induced perturbations of the Ge(111)-c(2 x 8) reconstruction Initial stages of oxidation of Ge(111)-c(2 x 8) studied by scanning tunneling microscopy
is cites work of	wds:Q51552834-0DC35B17-8361-4FF2-B4AB-E82FEE0EEBB7 wds:Q74541050-3B955868-2AFF-4B50-B758-E803D01B4DD8 wds:Q78211747-9C77A983-D1E2-4CB2-A490-981A203ACCD4 wds:Q74511805-B142E781-6572-4528-AAAE-3305D53C99E4 wds:Q78124928-4E316556-30FF-4E7B-A56D-79CD445422EC wds:Q78193835-E5115692-5465-4DAB-89CD-23388D4FC92C wds:Q74508151-90D94517-52BE-49D1-8C4D-22E2F4FDF9CA wds:Q78113211-A1A5717A-0EB2-4392-83A1-A9F3BCC9B81E wds:Q74405131-398F534A-E092-476A-8341-F903D3E258C8 wds:Q52951026-B7F9F1A3-7D73-44F6-BF1B-41D1002C257A wds:Q78112749-08E71CF6-5382-439F-9C3D-D337E0493390 wds:Q74376549-FD97DCE2-EF59-4163-BBA4-A0D1CD9CB94F wds:Q74512901-9E938B95-8BA3-46A0-9B23-CAC34B82163F wds:Q74519672-3F538092-6DE3-446B-BC22-FE53C5FD6251 wds:Q66690729-8FB2CA56-D455-4275-8495-FE37D9610FFB wds:Q36002755-F52A8C83-7E93-4928-B2D3-1C959683A6AB wds:Q74512290-60CAE543-9549-4CD8-979A-E005D077E2FC wds:Q78219573-E164C153-0C78-40A6-86E4-E40AD4ADF480 wds:Q74395962-38EA18FC-CDF3-4635-AA38-ABBE45C87D0C

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