About: Direct-band-gap structure of uniaxial-stressed SixGe1-x/Ge

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About: Direct-band-gap structure of uniaxial-stressed SixGe1-x/Ge Goto Sponge Distinct Permalink

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scientific article published on 01 March 1992

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в березні 1992 (uk) artículu científicu espublizáu en marzu de 1992 (ast) im März 1992 veröffentlichter wissenschaftlicher Artikel (de) scientific article published on 01 March 1992 (en)
publication date	wds:Q66690716-D62A2BFD-B312-471F-8E05-6239DF0AD646
publication date	1992-03-01 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q66690716-A54D6B9C-FF6E-4D6C-A56A-EABABE564D92
language of work or name	English
cites work	wds:Q66690716-338A8766-6780-49DF-96FD-5640CE57B3EE wds:Q66690716-3C29724C-FC33-4711-B616-250A8AEA15B4 wds:Q66690716-3E5331C1-E3E1-48D2-935D-ABD4E43F834C wds:Q66690716-69F66444-0741-4AB1-A3A7-FD4614CC6B76 wds:Q66690716-7CBCCB6E-8297-4A79-BBAA-D58CED026039 wds:Q66690716-8168D3F8-DC50-4625-860C-C18DEA8CC3B3 wds:Q66690716-C270898C-DE40-4D5D-8673-1DB748F81B6F
cites work	Simplified LCAO Method for the Periodic Potential Problem Theoretical calculations of heterojunction discontinuities in the Si/Ge system Structurally induced optical transitions in Ge-Si superlattices Theory of optical transitions in Si/Ge(001) strained-layer superlattices Core-level photoemission measurements of valence-band offsets in highly strained heterojunctions: Si-Ge system Hydrostatic-pressure dependencies of deep impurity levels in zinc-blende semiconductors Self-consistent band-edge deformation potentials in a tight-binding framework
author name string	wds:Q66690716-036EE256-048E-4BE7-84ED-6D546EDB8934 wds:Q66690716-2929F1C0-EF07-4D42-9293-3ED0278F9401 wds:Q66690716-BA7F048B-443E-4171-8909-99F0C18A387E
author name string	Yang GL Ren SY Dow JD
rdfs:label	Direct-band-gap structure of uniaxial-stressed SixGe1-x/Ge (en) Direct-band-gap structure of uniaxial-stressed SixGe1-x/Ge (nl)
skos:prefLabel	Direct-band-gap structure of uniaxial-stressed SixGe1-x/Ge (en) Direct-band-gap structure of uniaxial-stressed SixGe1-x/Ge (nl)
name	Direct-band-gap structure of uniaxial-stressed SixGe1-x/Ge (en) Direct-band-gap structure of uniaxial-stressed SixGe1-x/Ge (nl)
title	wds:Q66690716-0D5D3CAD-ADE0-4B44-A74F-4E044E157A9D
title	Direct-band-gap structure of uniaxial-stressed SixGe1-x/Ge (en)
page(s)	wds:Q66690716-8E4E22B0-9E1C-4924-96B1-4CC3C9269A4D
page(s)	6628-6636
instance of	wds:Q66690716-CDBE1282-4002-44CE-8829-0665374E5B45
instance of	scholarly article
PubMed ID	wds:Q66690716-E734AACE-2645-4AA3-919C-50E7645014FC
PubMed ID	http://rdf.ncbi.nlm.nih.gov/pubchem/reference/10000423
PubMed ID	10000423
published in	wds:Q66690716-F8BA062D-B926-44BA-BA12-C276F20847E5
published in	Physical Review B
issue	wds:Q66690716-F1CA9334-6674-4FC0-B411-81FEF7604EA9
volume	wds:Q66690716-224D774F-CB7B-4412-A024-2760215728BC
issue	12
volume	45
DOI	wds:Q66690716-1F5C3E9A-EB0B-4601-9904-525980616842
DOI	http://dx.doi.org/10.1103/PHYSREVB.45.6628
DOI	10.1103/PHYSREVB.45.6628
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q66690716

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