About: Band gap of wurtzite GaAs: A resonant Raman study

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scholarly article in Physical Review B, vol. 86 no. 7, August 2012

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в серпні 2012 (uk) im August 2012 veröffentlichter wissenschaftlicher Artikel (de) scholarly article in Physical Review B, vol. 86 no. 7, August 2012 (en)
publication date	wds:Q57654761-9F1E7247-4EDD-4338-A377-7C179669CF4C
publication date	2012-08-24 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q57654761-1320CF82-29F5-46B1-A26C-5AA2E090F945
language of work or name	English
cites work	wds:Q57654761-07AC19A0-958A-4672-A582-D809EB906E12 wds:Q57654761-496EA8E4-444F-4499-A02A-1CC3A5C77205 wds:Q57654761-59D6576F-08E4-403D-8339-952B70FBFFBF wds:Q57654761-5E8D4183-F4F3-42EE-8F29-FB93BE002629
cites work	Suitability of Au- and self-assisted GaAs nanowires for optoelectronic applications. Control of III–V nanowire crystal structure by growth parameter tuning Crystal Phases in III--V Nanowires: From Random Toward Engineered Polytypism Exciton-phonon coupling in individual GaAs nanowires studied using resonant Raman spectroscopy
author name string	wds:Q57654761-16B2FA4D-6ED4-43EF-81EB-9DBF7D079CBA wds:Q57654761-84419228-51E9-4FA6-930C-5003D4426C85 wds:Q57654761-87F69FE7-FD7D-4C1C-B30E-76369C450F3F wds:Q57654761-AB03697B-84F9-45F0-BC07-18B9E52C60DD wds:Q57654761-EBADF32D-C4E0-495B-8800-8B054EE88735
author name string	Henning Riechert Lutz Geelhaar Steffen Breuer Manfred Ramsteiner Patryk Kusch
rdfs:label	Band gap of wurtzite GaAs: A resonant Raman study (en) Band gap of wurtzite GaAs: A resonant Raman study (nl)
skos:prefLabel	Band gap of wurtzite GaAs: A resonant Raman study (en) Band gap of wurtzite GaAs: A resonant Raman study (nl)
name	Band gap of wurtzite GaAs: A resonant Raman study (en) Band gap of wurtzite GaAs: A resonant Raman study (nl)
author	wds:Q57654761-A4BB705C-A0F4-4A89-AB33-1F00CD4490DF
author	Stephanie Reich
title	wds:Q57654761-4CFA6592-74F8-4025-969C-99ED86626736
title	Band gap of wurtzite GaAs: A resonant Raman study (en)
instance of	wds:Q57654761-6A3F5D26-CE59-4816-B07B-12F4B578F0B5
instance of	scholarly article
published in	wds:Q57654761-20F854F8-6C82-4D1B-8F95-630999A91A58
published in	Physical Review B
issue	wds:Q57654761-915F8C14-28C5-499C-92E0-859EC861ECC9
volume	wds:Q57654761-3A3F2C0A-C392-4602-A19E-08D035D09F65
issue	7
volume	86
DOI	wds:Q57654761-4583E5AD-557D-4A35-BFF7-10BCC49451A2
DOI	http://dx.doi.org/10.1103/PHYSREVB.86.075317
DOI	10.1103/PHYSREVB.86.075317
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q57654761
is cites work of	Vibrational, electronic and structural properties of wurtzite GaAs nanowires under hydrostatic pressure Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces Inducing a direct-to-pseudodirect bandgap transition in wurtzite GaAs nanowires with uniaxial stress ab initio Energetics and Thermoelectric Profiles of Gallium Pnictide Polytypes Type-II band alignment of zinc-blende and wurtzite segments in GaAs nanowires: A combined photoluminescence and resonant Raman scattering study Enhanced spin-orbit coupling in core/shell nanowires Quenching of the E2 phonon line in the Raman spectra of wurtzite GaAs nanowires caused by the dielectric polarization contrast Towards higher electron mobility in modulation doped GaAs/AlGaAs core shell nanowires.
is cites work of	wds:Q34241322-4CA0596E-D027-4EDE-99C2-9C7C981EAB36 wds:Q64061811-4DC3D403-9331-4FCF-A100-E9EE1CF96777 wds:Q37166160-413CD1FF-8E63-452F-B472-ACFB35091C6D wds:Q57654736-3D3FE1F9-29DD-4991-826D-E05A3591382A wds:Q57189008-5FE4463F-6860-41FA-8192-1F552D4EB7AB wds:Q87647888-805244C2-91C4-4395-8387-C56251C83059 wds:Q48060725-8EE69F18-DC7F-4000-925C-063640DAFDE7 wds:Q57654750-267423B6-AD47-4A6C-A918-8E56EE56356C

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