About: Resonant magnetotunnelling of electrons and holes in a p-i-n diode device incorporating a double barrier structure

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article published in 1992

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в березні 1992 (uk) article published in 1992 (en) im März 1992 veröffentlichter wissenschaftlicher Artikel (de)
publication date	wds:Q62441193-8E617177-7DF3-43D8-96DF-5A9BAE601F3D
publication date	1992-03-01 00:00:00Z (xsd:dateTime)
author name string	wds:Q62441193-0E6E3643-0F17-4C8C-BE5E-6DEA6CC0192E wds:Q62441193-4432A7BD-8421-4E5F-8E4C-9A280A0DD758 wds:Q62441193-48AA307C-5AD7-45DA-A113-017DA4D4EC12 wds:Q62441193-61D66589-C476-4F25-9D3F-23A97FFC4906 wds:Q62441193-E0A8A0DF-FBEB-4FF7-9778-EA122AD25220 wds:Q62441193-E0DB45A0-3499-43D1-BF26-AE9F341BCC15 wds:Q62441193-EF7263A8-6C9F-40EE-99A6-23466470C743
author name string	P M Martin M A Pate D K Maude J C Portal R K Hayden C R H White I Eaves
rdfs:label	Resonant magnetotunnelling of electrons and holes in a p-i-n diode device incorporating a double barrier structure (en) Resonant magnetotunnelling of electrons and holes in a p-i-n diode device incorporating a double barrier structure (nl)
skos:prefLabel	Resonant magnetotunnelling of electrons and holes in a p-i-n diode device incorporating a double barrier structure (en) Resonant magnetotunnelling of electrons and holes in a p-i-n diode device incorporating a double barrier structure (nl)
name	Resonant magnetotunnelling of electrons and holes in a p-i-n diode device incorporating a double barrier structure (en) Resonant magnetotunnelling of electrons and holes in a p-i-n diode device incorporating a double barrier structure (nl)
author	wds:Q62441193-E418D4AE-A823-42A1-BC46-B41B2DF6F3C2 wds:Q62441193-F8DB8151-EA6D-4064-B2A1-39BE15F61C3F
author	Mohamed Henini Geoff Hill
title	wds:Q62441193-67909857-3156-44AD-9DCD-2A5C5FD8DCD3
title	Resonant magnetotunnelling of electrons and holes in a p-i-n diode device incorporating a double barrier structure (en)
page(s)	wds:Q62441193-E06997E6-887F-4ABB-968C-FA25D5AED0F4
page(s)	B456-B459
instance of	wds:Q62441193-99594640-7CC1-4427-BD8F-79627F533020
instance of	scholarly article
published in	wds:Q62441193-00637B55-5034-4C45-8E3C-9616BB06A565
published in	Semiconductor Science and Technology
issue	wds:Q62441193-0D1BCC64-71F7-4E22-AC5A-E114428317C0
volume	wds:Q62441193-00AF8010-EE2B-413E-8277-60A68829C29A
issue	3B
volume	7
DOI	wds:Q62441193-8B036662-A2F7-4003-B696-4CFBD656FC2D
DOI	http://dx.doi.org/10.1088/0268-1242/7/3B/118
DOI	10.1088/0268-1242/7/3B/118
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q62441193
is cites work of	Voltage-controlled sharp-line electroluminescence in GaAs-AlAs double-barrier resonant-tunneling structures High efficiency submicron light‐emitting resonant tunneling diodes
is cites work of	wds:Q57882447-23A5A5DC-FE58-4233-9F35-42DDB83629FE wds:Q62439586-6108C3AB-6B95-46E8-9493-A9A564E271D4

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