About: Hot carrier relaxation in InAs/GaAs quantum dots

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rdf:type	Item
description	наукова стаття, опублікована в липні 1998 (uk) article scientifique publié en 1998 (fr)
publication date	wds:Q62394997-85203B2A-79EE-4213-83A2-84C6BE698C0F
publication date	1998-07-01 00:00:00Z (xsd:dateTime)
cites work	wds:Q62394997-330C316F-1061-4426-9909-5D0DC7379281 wds:Q62394997-3F26B785-2537-4C37-824C-EDCE18D74BCB wds:Q62394997-4CB081F5-5329-4010-AE4A-A81B9DB7EF53 wds:Q62394997-73D5C855-473E-4104-BBE1-D213D7DD0B5A wds:Q62394997-7AB11F36-FAE2-4616-B9ED-95B1F2729F38 wds:Q62394997-914984A9-4657-4CBA-A9FC-D60CB8A1FFA7 wds:Q62394997-9B51607F-A4CD-4684-A4E2-057476D5CD8A wds:Q62394997-A270ADD2-4D77-40E8-AD52-63B45BD80880 wds:Q62394997-AB473771-CB26-4732-884C-751354B0B4F1 wds:Q62394997-B09E93D4-0BBF-4E30-B195-FCE89569C5C8 wds:Q62394997-CD415CD9-8530-4E49-81F0-56A537313A9C wds:Q62394997-E5963C97-4567-473E-8B91-01E54D3200F1
cites work	InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure Vertically self-organized InAs quantum box islands on GaAs(100) Intrinsic mechanism for the poor luminescence properties of quantum-box systems Multiphonon‐relaxation processes in self‐organized InAs/GaAs quantum dots Carrier relaxation and electronic structure in InAs self-assembled quantum dots Theory of random population for quantum dots Electronic energy levels and energy relaxation mechanisms in self-organized InAs/GaAs quantum dots Rapid carrier relaxation in self-assembled InxGa1-xAs/GaAs quantum dots Electron relaxation in a quantum dot: Significance of multiphonon processes Very large optical nonlinearity of semiconductor microcrystallites Emission from discrete levels in self‐formed InGaAs/GaAs quantum dots by electric carrier injection: Influence of phonon bottleneck Optical spectroscopy of self-organized nanoscale hetero-structures involving high-index surfaces
author name string	wds:Q62394997-08180F38-0735-451C-B6DB-FA95C504287C wds:Q62394997-0D50302E-721A-4B4F-A6E6-EDBD6650876A wds:Q62394997-0F52EDE5-1F4E-42B7-B450-8EF553DB9745 wds:Q62394997-139D4441-BF78-4209-B3F9-0F8F8CE38E28 wds:Q62394997-17320047-F1C2-4114-BDF7-DA697932DA2E wds:Q62394997-1AFA74B9-CFE4-464A-BAB3-639374F1369C wds:Q62394997-477F8797-BF88-4C9A-8A4C-C94338A2B7FB wds:Q62394997-58F29913-481A-4A93-B628-635DDE4AA579 wds:Q62394997-5FB94D21-66C9-4B4D-8DC6-C1965B0D63D0 wds:Q62394997-8B11322A-F9F0-4ABA-9889-BC76C69C00A6 wds:Q62394997-D04FD4CC-7509-41E5-8973-C6D9FFDCCF66 wds:Q62394997-DED093C9-53BD-4A28-8A2F-0504C1D3064C
author name string	P. Chen A. Hoffmann M. Veit Q. Xie M. Grundmann N.N. Ledentsov R. Heitz V.M. Ustinov Zh.I. Alferov A. Madhukar P.S. Kop'ev A. Kalburge
rdfs:label	Hot carrier relaxation in InAs/GaAs quantum dots (en)
skos:prefLabel	Hot carrier relaxation in InAs/GaAs quantum dots (en)
name	Hot carrier relaxation in InAs/GaAs quantum dots (en)
author	wds:Q62394997-D26287BE-5B76-42F1-AA47-07834F7C3305
author	Dieter Bimberg
title	wds:Q62394997-06A02505-1B6F-4B22-BB64-491912699A9C
title	Hot carrier relaxation in InAs/GaAs quantum dots (en)
page(s)	wds:Q62394997-3C504728-4E58-4F8F-9F3B-019F726ED4B4
page(s)	578-582
instance of	wds:Q62394997-4E74214C-E0B2-4C07-8374-B677322E74E5
instance of	scholarly article
main subject	wds:Q62394997-A0F9CCC9-4606-4407-AF50-E2E6E2B52463
main subject	quantum dot
published in	wds:Q62394997-F6806459-210E-42CA-A235-3807EB9B1641
published in	Physica E: Low-Dimensional Systems and Nanostructures
issue	wds:Q62394997-82DB5903-CC8F-44BD-944B-67B44DC53885
volume	wds:Q62394997-B1769F32-B0A7-4659-90C7-7559C85DF37B
issue	1-4
volume	2
DOI	wds:Q62394997-F290A461-BA6D-4B65-9719-93A3B880E259
DOI	http://dx.doi.org/10.1016/S1386-9477(98)00118-0
DOI	10.1016/S1386-9477(98)00118-0
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q62394997
is cites work of	Semiconductor Quantum Dots and Quantum Dot Arrays and Applications of Multiple Exciton Generation to Third-Generation Photovoltaic Solar Cells Influence of the InAs coverage on the phonon-assisted recombination in InAs/GaAs quantum dots Disorder–induced localized states in InAs/GaAs multilayer quantum dots
is cites work of	wds:Q23909459-370B337C-7AD2-427D-997B-1D728B538080 wds:Q62382335-265E40A6-C6CB-4C47-B36B-57D406AABF34 wds:Q62589502-35FCDD4A-2144-47B9-AEEF-C59F73653933

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