About: Joel Eymery

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An Entity of Type : wikibase:Item, within Data Space : wikidata.demo.openlinksw.com associated with source document(s)

researcher ORCID ID = 0000-0002-4216-1166

Attributes	Values
rdf:type	Item
description	forsker (nb) 연구원 (ko) эрдэмтэн (mn) изилдөөчү (ky) 研究者 (zh) investigador francés (es) chercheur français (fr) investigador francés (ast) Frans onderzoeker (nl) ikertzaile frantziarra (eu) investigador francès (ca) investigador francés (gl) investigador francês (pt) ricercatore francese (it) researcher ORCID ID = 0000-0002-4216-1166 (en)
rdfs:label	J. Eymery (nl) J. Eymery (sl) J. Eymery (ast) Joel Eymery (ca) Joel Eymery (en) Joel Eymery (es) Joel Eymery (fr) Joel Eymery (nb)
skos:prefLabel	J. Eymery (nl) J. Eymery (sl) J. Eymery (ast) Joel Eymery (ca) Joel Eymery (en) Joel Eymery (es) Joel Eymery (fr) Joel Eymery (nb)
name	J. Eymery (nl) J. Eymery (sl) J. Eymery (ast) Joel Eymery (ca) Joel Eymery (en) Joel Eymery (es) Joel Eymery (fr) Joel Eymery (nb)
Scopus author ID	wds:Q59555487-F46319EB-2FF4-4AE6-AC6B-974C17FB3607
Scopus author ID	7004704563
given name	wds:Q59555487-92993BA0-6F46-4913-B150-A90F9266306A
given name	Joel
instance of	wds:Q59555487-18CEF45B-83F5-44C7-A9F6-9B2ED238F790
instance of	Homo sapiens
doctoral student	wds:Q59555487-04723C3F-F6A6-4C2F-B345-07EC02F7799D
doctoral student	Akanksha Kapoor
skos:altLabel	J. Eymery (en)
occupation	wds:Q59555487-7608BF59-295B-45DA-A9FD-CFE09F2F5671
employer	wds:Q59555487-61663F4E-797E-4482-97A0-F3A70CD613E6 wds:Q59555487-7D522D3D-9E4E-4318-AD08-AE51DA6F0F1A wds:Q59555487-F7D2DA6F-9918-4D2A-B10F-22ECC7F1C2C5
languages spoken, written or signed	wds:Q59555487-BEA288EE-29AD-49BF-9794-D42D6333BF4B
sex or gender	wds:Q59555487-2EB33CFC-E5A0-47B3-A49B-EC6550161AAF
VIAF ID	wds:Q59555487-70B708D1-0C5A-4456-9775-B08D0B482382
IdRef ID	wds:Q59555487-E2DDA7D0-27DC-4008-AC6F-4C75C1BC6F0A
country of citizenship	wds:Q59555487-3024807B-BD40-4427-81B6-5C87ECD0E0F1
WorldCat Identities ID (superseded)	wds:Q59555487-DDEE7B21-4F88-41C5-8B91-FB5ECBAFA7B0
VIAF ID	http://viaf.org/viaf/198732289
IdRef ID	http://www.idref.fr/07759553X/id
occupation	researcher
employer	University of California, Santa Barbara CEA Grenoble
languages spoken, written or signed	French
sex or gender	male
VIAF ID	198732289
IdRef ID	07759553X
country of citizenship	France
WorldCat Identities ID (superseded)	viaf-198732289
ORCID iD	wds:Q59555487-B1EE935D-3B8F-4F8C-B8D9-79CD3B42B021
ORCID iD	https://orcid.org/0000-0002-4216-1166
ORCID iD	0000-0002-4216-1166
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q59555487
is author of	Coherent x-ray wavefront reconstruction of a partially illuminated Fresnel zone plate. Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applications. Nanowire-based one-dimensional electronics Flexible Photodiodes Based on Nitride Core/Shell p-n Junction Nanowires. Correlation of microphotoluminescence spectroscopy, scanning transmission electron microscopy, and atom probe tomography on a single nano-object containing an InGaN/GaN multiquantum well system Flexible Light-Emitting Diodes Based on Vertical Nitride Nanowires. Investigation of Photovoltaic Properties of Single Core–Shell GaN/InGaN Wires Two-Dimensional Electron-Hole Liquid in Single Si Quantum Wells with Large Electronic and Dielectric Confinement Inversion Domain Boundaries in GaN Wires Revealed by Coherent Bragg Imaging. Silane-Induced N-Polarity in Wires Probed by a Synchrotron Nanobeam. Exploring Single Semiconductor Nanowires with a Multimodal Hard X-ray Nanoprobe M-Plane Core–Shell InGaN/GaN Multiple-Quantum-Wells on GaN Wires for Electroluminescent Devices Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes Self-assembled growth of catalyst-free GaN wires by metal–organic vapour phase epitaxy Strain and Shape of Epitaxial InAs/InP Nanowire Superlattice Measured by Grazing Incidence X-ray Techniques Effect of the quantum well thickness on the performance of InGaN photovoltaic cells Improved conversion efficiency of as-grown InGaN/GaN quantum-well solar cells for hybrid integration Integrated Photonic Platform Based on InGaN/GaN Nanowire Emitters and Detectors GaN wire-based Langmuir–Blodgett films for self-powered flexible strain sensors Determination of the biaxial stress in strained silicon nano-stripes through polarized oblique incidence Raman spectroscopy Crystallographic orientation of facets and planar defects in functional nanostructures elucidated by nano-focused coherent diffractive X-ray imaging X-ray measurements of the strain and shape of dielectric/metallic wrap-gated InAs nanowires Single-wire photodetectors based on InGaN/GaN radial quantum wells in GaN wires grown by catalyst-free metal-organic vapor phase epitaxy Experimental and theoretical analysis of transport properties of core-shell wire light emitting diodes probed by electron beam induced current microscopy. Role of Underlayer for Efficient Core-Shell InGaN QWs Grown on m-plane GaN Wire Sidewalls XTOP: high-resolution X-ray diffraction and imaging

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