About: Tuning the charge carriers in epitaxial graphene on SiC(0001) from electron to hole via molecular doping with C60F48

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rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в червні 2013 (uk) article scientifique publié en 2013 (fr) im Juni 2013 veröffentlichter wissenschaftlicher Artikel (de)
publication date	wds:Q58485487-5612C409-3C49-4F7B-9ACA-3618C735BDD5
publication date	2013-06-17 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q58485487-F8562AD6-D4BC-4133-94BF-730101D8A4CF
language of work or name	English
cites work	wds:Q58485487-04F8A830-9CD2-4585-AF46-B9DD79A14793 wds:Q58485487-23C8508B-E496-4F4A-A3F6-3F9AAE412FA9 wds:Q58485487-3B00EF91-19F1-435E-AD36-6CF9176A2C6E wds:Q58485487-4AE26E90-AD29-4792-9F08-6CC5EA9D654C wds:Q58485487-6FDBA0FB-81A6-4F80-889C-8339B0981DF6 wds:Q58485487-7DDA248E-551B-4EB2-AC99-35FC7B049658 wds:Q58485487-87A725AC-5EE9-4A08-A064-09D1720E4F4C wds:Q58485487-A33AE4F7-0C75-49E2-B62B-20D2F8CC32A0 wds:Q58485487-AD6F9EC2-3910-4E26-A249-BD5B71B60887 wds:Q58485487-D3495087-EEF2-4BBC-81F0-6CCA5ED6D516 wds:Q58485487-D5901652-0588-49B2-8116-7D08F83BA8E7 wds:Q58485487-E08FC5F7-39E0-43C4-8F78-712751E78BA9 wds:Q58485487-E1F9EBC4-3F9D-434B-B089-E94C6FEBB9D1 wds:Q58485487-F6653468-078F-42B6-806A-00E4723947E8 wds:Q58485487-F84C9109-01E1-4C1A-B535-F88EC130F2E0 wds:Q58485487-FF92E797-9202-4E51-9937-BCDF2E8235F4
cites work	Surface transfer p-type doping of epitaxial graphene. Interlayer Interaction and Electronic Screening in Multilayer Graphene Investigated with Angle-Resolved Photoemission Spectroscopy Detection of individual gas molecules adsorbed on graphene. Quasiparticle dynamics in graphene Electronic confinement and coherence in patterned epitaxial graphene. Molecular doping and band-gap opening of bilayer graphene. Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation Controlling the Electronic Structure of Bilayer Graphene The electronic properties of graphene Origin of Doping in Quasi-Free-Standing Graphene on Silicon Carbide Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide Highly p-doped epitaxial graphene obtained by fluorine intercalation Symmetry breaking in few layer graphene films Quantum oscillations and quantum Hall effect in epitaxial graphene Doping efficiency and energy-level scheme in C60F48-doped zinc–tetraphenylporphyrin films First results from a second generation toroidal electron spectrometer
author name string	wds:Q58485487-003DA0A8-8439-4536-A43D-FA9D82E38975 wds:Q58485487-1B09ED8B-A51B-432B-A7F4-0C5F566A5384 wds:Q58485487-376CCAAF-6651-4B77-80E5-09F6A812B001 wds:Q58485487-3F5095D7-6CC4-43CB-915E-ABF577870C78 wds:Q58485487-96FB0CD6-9407-44D4-93F0-94CD34E766A0 wds:Q58485487-C3500031-51E3-402B-8DF3-5B8E9E0C437D wds:Q58485487-E9D45B90-B851-403F-BD07-A7397A85E15F wds:Q58485487-F261F6EE-4B10-4B40-AAB8-148D3FDE5B93 wds:Q58485487-FE591E46-7028-4F6C-91C5-86EE3CF3BB2F
author name string	Z. Mazej J. Riley M. Wanke C. I. Pakes F. Fromm L. Ley M. T. Edmonds Th. Seyller Y. Smets
rdfs:label	Tuning the charge carriers in epitaxial graphene on SiC (nl) Tuning the charge carriers in epitaxial graphene on SiC(0001) from electron to hole via molecular doping with C60F48 (en)
skos:prefLabel	Tuning the charge carriers in epitaxial graphene on SiC (nl) Tuning the charge carriers in epitaxial graphene on SiC(0001) from electron to hole via molecular doping with C60F48 (en)
name	Tuning the charge carriers in epitaxial graphene on SiC (nl) Tuning the charge carriers in epitaxial graphene on SiC(0001) from electron to hole via molecular doping with C60F48 (en)
author	wds:Q58485487-F2D02816-44BB-4CCC-BD5F-6B5538BFF3F1
author	Anton Tadich
title	wds:Q58485487-03A2CEA7-A5C6-405C-A545-99D3BF0CDEA4
title	Tuning the charge carriers in epitaxial graphene on SiC(0001) from electron to hole via molecular doping with C60F48 (en)
page(s)	wds:Q58485487-A9108620-66F1-47D2-B375-FAC8FB7FF6A3
page(s)	241601
instance of	wds:Q58485487-68060AB5-F930-4703-AFA7-DCB121A1CA85
instance of	scholarly article
main subject	wds:Q58485487-333630A9-4D45-4FE2-991C-FEE71F2ED748
main subject	graphene
published in	wds:Q58485487-0B5DDB79-30BC-4E10-869A-DF762D815F3D
published in	Applied Physics Letters
issue	wds:Q58485487-8F8316CF-1F26-40FF-A6BD-4F6D30BBA3C6
volume	wds:Q58485487-574310DC-2044-47C0-A6C7-3C519062453E
issue	24
volume	102
DOI	wds:Q58485487-52D7A44B-6D8C-4C7E-97F3-F91EC2902395
DOI	http://dx.doi.org/10.1063/1.4811248
DOI	10.1063/1.4811248
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q58485487
is cites work of	Small Molecule/Polymer Blend Organic Transistors with Hole Mobility Exceeding 13 cm(2) V(-1) s(-1). Bipolar gating of epitaxial graphene by intercalation of Ge Controlling Molecular Doping in Organic Semiconductors. Chemical-doping-driven crossover from graphene to "ordinary metal" in epitaxial graphene grown on SiC.
is cites work of	wds:Q58153690-0D7950C2-67AE-489F-9A29-3CC7122AF3A7 wds:Q38647064-F84153B1-90B1-4E86-89EA-AA1F5E3D6F53 wds:Q46785794-5E42156B-8182-45FC-AB19-BCD650E3953E wds:Q51270436-C0723CD2-DF64-4898-B466-EA30F5DB2472

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