About: Electrical and structural characteristics of yttrium oxide films deposited by rf-magnetron sputtering on n-Si

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scholarly article by E. K. Evangelou et al published July 2003 in Journal of Applied Physics

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в липні 2003 (uk) article scientifique publié en 2003 (fr) im Juli 2003 veröffentlichter wissenschaftlicher Artikel (de) scholarly article by E. K. Evangelou et al published July 2003 in Journal of Applied Physics (en)
publication date	wds:Q57387459-9D7F4B48-0C1C-44EE-9961-20D7C4D05B44
publication date	2003-07-01 00:00:00Z (xsd:dateTime)
cites work	wds:Q57387459-5A827A8E-FDE7-4EF9-A60E-F4F680524092
cites work	High-κ gate dielectrics: Current status and materials properties considerations
author name string	wds:Q57387459-312FA8E8-3CE2-4401-8E1E-BCBC8C42B998 wds:Q57387459-3F5FDF0A-4B92-48AC-AE0A-2F1A9D050F91 wds:Q57387459-4840B67C-0175-484E-9829-FD9F4A836B17 wds:Q57387459-F69F96C0-3573-46CD-A945-0EA7D6ABDBC9
author name string	E. K. Evangelou M. Fanciulli M. Sethu W. Cranton
rdfs:label	Electrical and structural characteristics of yttrium oxide films deposited by rf-magnetron sputtering on n-Si (en) Electrical and structural characteristics of yttrium oxide films deposited by rf-magnetron sputtering on n-Si (nl)
skos:prefLabel	Electrical and structural characteristics of yttrium oxide films deposited by rf-magnetron sputtering on n-Si (en) Electrical and structural characteristics of yttrium oxide films deposited by rf-magnetron sputtering on n-Si (nl)
name	Electrical and structural characteristics of yttrium oxide films deposited by rf-magnetron sputtering on n-Si (en) Electrical and structural characteristics of yttrium oxide films deposited by rf-magnetron sputtering on n-Si (nl)
author	wds:Q57387459-B0A162D3-28FC-4781-8A9E-DBEAB789A1F1
author	Claudia Wiemer
title	wds:Q57387459-2C133B19-3D53-4E19-A342-C883C48E815C
title	Electrical and structural characteristics of yttrium oxide films deposited by rf-magnetron sputtering on n-Si (en)
page(s)	wds:Q57387459-EBD28B5D-998A-4309-9FB8-9402116D9F23
page(s)	318-325
instance of	wds:Q57387459-56342E9F-25FD-4C30-8AB2-007939480B0F
instance of	scholarly article
main subject	wds:Q57387459-B9E9AAFF-10B1-4066-B714-44ED90F18BEC
main subject	yttrium
published in	wds:Q57387459-AB32B370-C403-4C0A-B84C-0487A9AA5584
published in	Journal of Applied Physics
issue	wds:Q57387459-8F68BD69-EDF4-4862-99B8-D480C835B293
volume	wds:Q57387459-C19BF802-A93A-4C71-93EF-1CDD932AEC4C
issue	1
volume	94
DOI	wds:Q57387459-24C32A10-8376-47FA-9ACE-D53FE9AD5342
DOI	http://dx.doi.org/10.1063/1.1580644
DOI	10.1063/1.1580644
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q57387459
is cites work of	Sigma-pi molecular dielectric multilayers for low-voltage organic thin-film transistors Visible emission from bismuth-doped yttrium oxide thin films for lighting and display applications. Yttrium oxide thin films: Influence of the oxygen vacancy network organization on the microstructure
is cites work of	wds:Q47159852-45FF06BB-2703-48EF-AF2B-83E019DF7742 wds:Q33935260-9D5F885D-DEA7-4FB6-8590-922AF6122FC1 wds:Q62521580-13024474-9187-4987-9B3D-3A7E5EAE725B

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