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US patent 11526649

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  • patente d'Estaos Xuníos (ast)
  • патент США (uk)
  • US patent 11526649 (en)
author name string
author name string
  • Cheok-Kei Lei (Macau)
  • Chi-Lin Liu (New Taipei)
  • Chien-Hsing Li (Hsinchu)
  • Hui-Zhong Zhuang (Kaohsiung)
  • Jerry Chang Jui Kao (Taipei)
  • Zhe-Wei Jiang (Hsinchu)
rdfs:label
  • Capacitive isolation structure insert for reversed signals (en)
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  • Capacitive isolation structure insert for reversed signals (en)
name
  • Capacitive isolation structure insert for reversed signals (en)
title
title
  • Capacitive isolation structure insert for reversed signals (en)
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instance of
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country
patent number
patent number
  • US11526649
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owned by
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